P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable ( RoHS Compliant) D S G Top View of SOT-23-3 D pplications G Power Management in Notebook Computer, Portable Equipment, and Battery Powered Systems. S P Channel MOSFET Ordering and Marking Information PM2301C ssembly Material Handling Code Temperature Range Package Code Package Code : SOT-23-3 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device PM2301C : C01X X - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Rev..7- Jul., 2009 1
bsolute Maximum Ratings (T = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -20 V V GSS Gate-Source Voltage ±12 * I D * I DM * I S Continuous Drain Current -3 V GS =-4.5V 300µs Pulsed Drain Current -12 Diode Continuous Forward Current -1.3 T J Maximum Junction Temperature 150 C T STG Storage Temperature Range -55 to 150 P D * T =25 C 0.83 Maximum Power Dissipation W T =100 C 0.3 R θjc Thermal Resistance-Junction to Case 75 C/W R θj * Thermal Resistance-Junction to mbient 150 C/W Note : *Surface Mounted on 1in 2 pad area, t 10sec. Electrical Characteristics (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions PM2301C Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µ -20 - - V I DSS V DS =-16V, V GS =0V - - -1 Zero Gate Voltage Drain Current µ T J =85 C - - -30 V GS(th) Gate Threshold Voltage V DS = V GS, I DS =-250µ -0.5-0.75-1 V I GSS Gate Leakage Current V GS =±12V, V DS =0V - - ±10 µ V GS =-4.5V, I DS =-3-56 70 R a DS(ON) a V SD Drain-Source On-State Resistance V GS =-2.5V, I DS =-2-85 115 mω V GS =-1.8V, I DS =-1-135 250 Diode Forward Voltage I SD =-1.3, V GS =0V - -0.75-1.3 V Gate Charge Characteristics b Q g Total Gate Charge - 7 10 Q gs Gate-Source Charge V DS =-10V, V GS =-4.5V, I DS =-3-1.9 - Gate-Drain Charge - 1.9 - Q gd nc 2
Electrical Characteristics (Cont.) (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b PM2301C Min. Typ. Max. C iss Input Capacitance V GS =0V, - 580 - C oss Output Capacitance V DS =-10V, - 100 - Reverse Transfer Capacitance Frequency=1.0MHz - 75 - C rss t d(on) Turn-on Delay Time - 4 7 t r Turn-on Rise Time V DD =-10V, R L =10Ω, - 13 23 I DS =1, V GEN =-4.5V, t d(off) Turn-off Delay Time R - 35 63 G =6Ω Turn-off Fall Time - 20 36 t f t rr Reverse Recovery Time I SD =-3, - 20 - ns Reverse Recovery Charge dl SD /dt =100/µs - 7 - nc Q rr Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns 3
Typical Operating Characteristics Power Dissipation Drain Current 1.0 3.5 0.9 0.8 3.0 P tot - Power (W) 0.7 0.6 0.5 0.4 0.3 -I D - Drain Current () 2.5 2.0 1.5 1.0 0.2 0.1 T =25 o C 0.0 0 20 40 60 80 100 120 140 160 0.5 T =25 o C,V G =-4.5V 0.0 0 20 40 60 80 100 120 140 160 T J - Junction Temperature ( C) T J - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance 50 2 -I D - Drain Current () 10 1 0.1 Rds(on) Limit 300µs 1ms 10ms 100ms 1s DC T =25 o C 0.01 0.01 0.1 1 10 100 Normalized Effective Transient 1 0.1 0.01 0.02 0.01 0.05 0.1 Single Pulse 0.2 Duty = 0.5 Mounted on 1in 2 pad R θj : 150 o C/W 1E-3 1E-4 1E-3 0.01 0.1 1 10 -V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 12 V GS = -3,-4, -5, -6, -7, -8, -9, -10V 240 10 210 V GS = -1.8V -I D - Drain Current () 8 6 4 2-2.5V -2V -1.5V R DS(ON) - On - Resistance (mω) 180 150 120 90 60 30 V GS = -2.5V V GS = -4.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -V DS - Drain-Source Voltage (V) 0 0 2 4 6 8 10 12 -I D - Drain Current () Drain-Source On Resistance Gate Threshold Voltage 100 I D = -3 1.6 I DS = -250µ 90 1.4 R DS(ON) - On - Resistance (mω) 80 70 60 50 Normalized Threshold Voltage 1.2 1.0 0.8 0.6 40 0.4 30 1 2 3 4 5 6 7 8 9 10 0.2-50 -25 0 25 50 75 100 125 150 -V GS - Gate - Source Voltage (V) T J - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 1.8 V GS = -4.5V I DS = -3 10 Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 -I S - Source Current () 1 T j =150 o C T j =25 o C 0.4 R ON @T j =25 o C: 56mΩ 0.2-50 -25 0 25 50 75 100 125 150 0.1 0.0 0.3 0.6 0.9 1.2 1.5 T J - Junction Temperature ( C) -V SD - Source - Drain Voltage (V) Capacitance Gate Charge 800 700 Frequency=1MHz 4.5 4.0 V DS = -10V I DS = -3 C - Capacitance (nc) 600 500 400 300 200 100 Crss Coss Ciss -V GS - Gate - Source Voltage (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 4 8 12 16 20 -V DS - Drain - Source Voltage (V) 0.0 0 1 2 3 4 5 6 7 Q G - Gate Charge (nc) 6
Package Information SOT-23-3 D e SEE VIEW 2 0.25 E1 E b c e1 1 L 0 GUGE PLNE SETING PLNE S Y M B O L 1 2 b c D E E1 e e1 L 0.30 0 MIN. 0.00 0.90 0.30 0.08 MILLIMETERS 0.95 BSC 1.90 BSC MX. 1.45 0.15 1.30 0.50 0.22 SOT-23-3 VIEW MIN. 0.000 0.035 0.012 0.003 0.60 0.012 INCHES 0.037 BSC 0.075 BSC MX. 0.057 0.006 0.051 0.020 0.009 2.70 3.10 0.106 0.122 2.60 1.40 3.00 1.80 0.102 0.055 0.118 0.071 0.024 0 8 0 8 Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. 7
Recommended Land Pattern SOT-23-3 0.8 2.40 0.8 0.95 UNIT : mm Taping Direction Information SOT-23-3 USER DIRECTION OF FEED 8
Carrier Tape & Reel Dimensions OD0 P0 P2 P1 H E1 OD1 B T B0 W F K0 B 0 SECTION - SECTION B-B d T1 pplication H T1 C d D W E1 F 178.0 8.4+2.00 13.0+0.50 2.00 50 MIN. -0.00-0.20 1.5 MIN. 20.2 MIN. 8.0 0.30 1.75 0.10 3.5 0.05 SOT-23-3 P0 P1 P2 D0 D1 T 0 B0 K0 1.5+0.10 0.6+0.00 4.0 0.10 4.0 0.10 2.0 0.05-0.00 1.0 MIN. -0.40 3.20 0.20 3.10 0.20 1.50 0.20 (mm) Devices Per Unit Package Type Unit Quantity SOT-23-3 Tape & Reel 3000 9
Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds verage ramp-up rate (T smax to T P) Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 3 C/second max. 3 C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds verage ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. 10
Classification Reflow Profiles Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B102 5 Sec, 245 C HOLT JESD-22, 108 1000 Hrs, Bias @ 125 C PCT JESD-22, 102 168 Hrs, 100%RH, 2atm, 121 C TCT JESD-22, 104 500 Cycles, -65 C~150 C Customer Service npec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 11