P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S Applications Inverters TO22 D G Absolute Maximum Ratings S P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage - V GSS Gate-Source Voltage ±25 V T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C -6 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T C =25 C -24 A 2 I D Continuous Drain Current(V GS =-V) T C =25 C -6 T C = C -42 A P D Maximum Power Dissipation T C =25 C 88 T C = C 94 W R θjc Thermal Resistance-Junction to Case.8 C/W R θja Thermal Resistance-Junction to Ambient 62.5 C/W Drain-Source Avalanche Ratings 3 E AS Avalanche Energy, Single Pulsed 4 mj Rev. A APR., 23 www.ruichips.com
Electrical Characteristics (T C =25 C Unless Otherwise Noted) Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25µA - V I DSS V DS =-V, V GS =V - Zero Gate Voltage Drain Current µa T J =25 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µA -2-4 V I GSS Gate Leakage Current V GS =±25V, V DS =V ± na R 4 DS(ON) Drain-Source On-state Resistance V GS =-V, I DS =-6A 8 25 mω Diode Characteristics 4 V SD Diode Forward Voltage I SD =-3A, V GS =V -.5 V trr Reverse Recovery Time ISD=-6A, dlsd/dt=a/µs 75 ns Qrr Reverse Recovery Charge 62 nc Dynamic Characteristics 5 R G Gate Resistance V GS =V,V DS =V,F=MHz 2 Ω C iss Input Capacitance V GS =V, 42 C oss Output Capacitance V DS =-5V, Frequency=.MHz 65 pf C rss Reverse Transfer Capacitance 38 t d(on) Turn-on Delay Time 27 t r Turn-on Rise Time V DD =-5V,I DS =-6A, 83 t d(off) Turn-off Delay Time V GEN =-V,R G =6Ω 45 ns t f Turn-off Fall Time 4 Gate Charge Characteristics 5 Q g Total Gate Charge 64 Q gs Gate-Source Charge V DS =-8V, V GS =-V, I DS =-6A 34 Q gd Gate-Drain Charge 5 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. 3Limited by T Jmax, I AS =-4A, V DD =-6V, R G = 5Ω, Starting T J = 25 C. 4Pulse test;pulse width 3µs, duty cycle 2%. 5Guaranteed by design, not subject to production testing. Rev. A APR., 23 2 www.ruichips.com
Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width TO22 Tube 5 - - Rev. A APR., 23 3 www.ruichips.com
Typical Characteristics 2 Power Dissipation 7 Drain Current P D - Power (W) 8 6 4 2 8 6 4 2 25 5 75 25 5 75 T J - Junction Temperature ( C) -I D - Drain Current (A) 6 5 4 3 2 VGS=-V 25 5 75 25 5 75 T J - Junction Temperature ( C) -I D - Drain Current (A).. R DS(ON) limited T C =25 C Safe Operation Area DC.. µs µs ms ms -V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistance (mω) 5 25 75 5 25 Drain Current Ids=-6A 2 3 4 5 6 7 8 9 -V GS - Gate-Source Voltage (V) ZthJC - Thermal Response ( C/W) Thermal Transient Impedance Duty=.5,.2,.,.5,.2,., Single Pulse.. Single Pulse R θjc =.8 C/W..... Square Wave Pulse Duration (sec) Rev. A APR., 23 4 www.ruichips.com
Typical Characteristics Output Characteristics Drain-Source On Resistance -I D - Drain Current (A) 8 6 4 2 -V -8V -6V -5V -3V 2 3 4 5 -V DS - Drain-Source Voltage (V) R DS(ON) - On Resistance (mω) 8 6 4 2 -V 3 6 9 2 -I D - Drain Current (A) Normalized On Resistance 2.5 2..5..5. V GS =-V I D =-6A Drain-Source On Resistance -5-25 25 5 75 25 5 T J - Junction Temperature ( C) -I S - Source Current (A) T J =25 C Rds(on)=8mΩ. Source-Drain Diode Forward T J =75 C T J =25 C.3.6.9.2.5.8 -V SD - Source-Drain Voltage (V) C - Capacitance (pf) 6 45 3 5 Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) 9 8 7 6 5 4 3 2 VDS=-8V IDS=-6A Gate Charge 5 5 2 Q G - Gate Charge (nc) Rev. A APR., 23 5 www.ruichips.com
Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A APR., 23 6 www.ruichips.com
Package Information E E p Q TO22 A A H θ D P L2 D DEP L θ θ2 L b2 b C e A2 e SYMBOL MM E2 INCH SYMBOL MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX A 4.4 4.55 4.7.73.79.85 Φp.4.5.6.55.59.63 A.2.3.4.47.5.55 e 2.54 BSC. BSC A2 2.23 2.38 2.53.88.94. e 5.8 BSC.2 BSC b.75.8.85.3.3.33 H 6.4 6.5 6.6.252.256.26 b2.7.28.39.46.5.55 L 2.7 3.8 3.65.5.59.537 c.4.5.6.6.2.24 L * * 3.95 * *.56 D 5.4 5.6 5.8.66.64.622 L2 2.5 REF.98 REF D 8.96 9.2 9.46.353.363.372 Φp 3.5 3.6 3.7.38.42.46 DEP.5.3.2.2.5.8 Q 2.73 2.8 2.87.7..3 E 9.66 9.97.28.38.393.45 θ 5 7 9 5 7 9 E * 8.7 * *.343 * θ2 3 5 3 5 E2 9.8..2.386.394.42 MM INCH Rev. A APR., 23 7 www.ruichips.com
Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 5, the 5floor An Tong Industrial Building, NO.27 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 83-5334 FAX: (86-755) 83-4278 E-mail: Sales-SZ@ruichips.com Rev. A APR., 23 8 www.ruichips.com