SiC Cascodes and its advantages in power electronic applications

SiC Cascodes and its advantages in power electronic applications WBG Power Conference, Munich, 5 th December 2017 Christopher Rocneanu Director Sales Europe and North America cro@unitedsic.com +4915121063411

USCi History Company Founded Built Pilot Production Fab Released the xr 1200V & 650V JBS diode series and the 1200V Normally-on JFETs 650V & 1200V 6 AECQ SiC JBS Diode qualified TS16949 1999 2009 2010 2011 2012 2013 2014 2015 2017 2018 Acquired and recapitalized by current board and management team Established 4 foundry relationship First foundry-based diodes and JFETs manufactured Initiated 6 Fab Transfer TS16949 6 wafer line qualification & production; Cascode 650V/1200V release MOSFET R&D 2

SiC Technology Focus Areas R&D Schottky Diodes Cascodes SiC JFETS SiC MOSFETS Custom Products / ICs World class performance in higher voltage devices Normally-Off Devices for Superior Performance in Switching Applications Normally-On Devices ideally suited for current limiting and protection Well Suited to 3.3-6.5KV applications Standard Platforms can be customized for unique applications Wide Band Gap Schottky Diodes & SiC Module Die IGBT Discretes & Silicon Superjunction Circuit Protection HV Si MOSFETs IGBTs Integrated Circuits & High Temperature Die Market Areas Addressed Taking Today s Silicon Approaches to the Next Level 650V >10kV 650 1700V 650 6.5kV 3300V 10kV 50V Spanning Across the Voltage Spectrum Power supplies, EV battery, solar inverters Power supplies, EV battery, solar inverters Circuit breakers, TVS, current limiters With a Multitude of Product Applications Medical, Traction, solar inverters High temperature or extreme environment applications 3

Product Lineup 6 inch G3 JBS diodes Family Base PN Description Samples RTM Die T0-220-2L TO247-3L D2PAK-Flat (F5) SOT227 650V UJ3D06504 4A 650V JBS Diode Q3 17 Q4 17 MP D D 650V UJ3D06506 6A 650V JBS Diode Q3 17 Q4 17 MP D D 650V UJ3D06508 8A 650V JBS Diode Q3 17 Q4 17 MP D D 650V UJ3D06510 10A 650V JBS Diode Available MP MP D 650V UJ3D06512 12A 650V JBS Diode Q4 17 Q1 18 Q1 18 D 650V UJ3D06516 16A 650V JBS Diode Q4 17 Q1 18 Q1 18 650V UJ3D06530 30A 650V JBS diode Available MP MP MP 650V UJ3D06560 2X 30A 650V JBS diode Available MP MP 650V UJ3D065200 200A 650V JBS diode Available Q1 18 D D Family Base PN Description Samples RTM Die T0-220-2L TO247-3L D2PAK-Flat (F5) SOT227 1200V UJ3D1202 2A 1200V JBS diode Available MP MP MP D 1200V UJ3D1205 5A 1200V JBS diode Available Q4 17 MP MP D 1200V UJ3D1210 10A 1200V JBS diode Available MP ES ES 1200V UJ3D1220 2X 10A 1200V JBS diode Q4 17 Q4 17 - ES 1200V UJ3D1250 50A 1200V JBS diode Available MP MP MP 1200V UJ3D12100 100A 1200V JBS diode ES Q2 18 ES D MP: Mass Production ES: Engineering samples available D: in Development 4

D2PAK FLAT (F5): Better Thermal and creepage New unique and pin to pin compatible package: Pin to pin compatible to D2PAK 2L Better thermal behaviour Samples available: 1200V, 2A.5A,10A, 20A 650V, 4A, 6A, 8A, 10A, 20A 5

High Current Diode in Hybrid Application Benefits available by swapping die, no system change needed 6

USCi s Switch Technology Compared to SiC MOSFETs Normally Off USCi SiC FET Normally Off Typical SiC MOSFET Integrated LV Si-MOSFET Additional Antiparallel SiC Diode Die Size (Smaller) R DSA ~ 1.75mΩ-cm 2 (Larger) R DSA ~ 3.1-4.5 mω-cm 2 Gate Drive (Standard) V GS = 0V to 12V OR (SIC) V GS = -25V to 25V V GS = -5V to 20V Threshold V GS(TH) = 5V Typical V GS(TH) = 2.2V Typical Intrinsic Diode VSD=1.5V, Low Qrr, +10% Over Temperature High VF, High Qrr, 3X Over Temperature Avalanche Yes Yes Short Circuit 4 us guaranteed, 8us typical Low ESD protection integrated n/a 7

RDS,A (active area) Comparison in 650V class devices 8

Cascode Operation 9

Gate Drive requirements 25V 0V -25V SiC Cascode 12V / 0V 20V -20V 22V Si IGBT + SJFET 15V/0V, 12V/0V V -6V 25V G2 SiC MOSFET Competitor R 18V/-3V -10V 0 G2 SiC MOSFET Competitor W 20V/-6V 19V -8-3V G3 SiC MOSFET Competitor W 0 15V/-4V According to Competitor R SIC Trench MOSFET Gen 3 with VGS<15V is expected to have thermal Run Away & significant higher losses! Maximum VGS rating vs. recommended VGS Easy Drop-in 12V turn-on makes SiC cascode an easy choice for drop-in replacement. Extra Margin in VGS SiC cascode has higher margin in VGS design and requires no negative VGS for turn-off. Integrated safety features Integrated clamping diode protects gates from 25V and adds ESD protection True Second source to any Si [IGBT, SJFET] and SIC MOSFET 10

SiC Device 3 rd Quadrant Operation (Datasheet comparison) Knee Voltage = 0.7V Knee Voltage = 2.1V USCi s SiC Cascode UJC1210K Low V F eliminates need for separate anti-parallel diode SiC MOSFET C2M0080120D 11

Cascode versus SiC MOSFET Reverse Recovery t rr <40ns 150 C, 800 V, 11aA, 1500 A/µs Performed on in-house double-pulse tester Gate-source shorted, V GS = 0 V 800 V inductive load 12

VDS (V) VDS (V) 1200 1000 800 600 400 200 0-200 1200 1000 800 600 400 200 0-200 HALF BRIDGE SWITCHING 20A, 800V, 125C @50% smaller SiC Die Size! UJC1210K VGS: 18V / -5V Rgon = 2.3 Ω, Rgoff = 10 Ω, Eon = 406 uj di/dt = 1.28 A/ns, dv/dt = 69 V/ns time (20 ns/div) VDS ID Eoff = 101 uj di/dt = 4.2 A/ns, dv/dt = 86 V/ns time (20 ns/div) VDS ID 42 35 28 21 14 7 0-7 7 0 ID (A) 42 35 28 21 14-7 ID (A) VDS (V) VDS (V) 1200 1000 800 600 400 200 0-200 1200 1000 800 600 400 200 0-200 C2M080120D VGS: 18V / -5V Rgon = 5 Ω, Rgoff = 5 Ω Eon = 446 uj di/dt = 2.1 A/ns, dv/dt = 71 V/ns time (20 ns/div) VDS ID Eoff = 115 uj di/dt = 2.3 A/ns, dv/dt = 60 V/ns time (20 ns/div) VDS ID 7 0 42 35 28 21 14 7 0-7 42 35 28 21 14-7 ID (A) ID (A) 13

Cascode 3 rd Quadrant Operation V GS_JFE T 0 D SiC Cascode V GS_JFE T 0 D SiC Cascode V GS_JFE T 0 D SiC Cascode V D S 0 V G S 0 G + V GS_JFET + S V DS_MOSFE T V D S 0 V G S 0 G + V GS_JFET + S V DS_MOSFE T V D S 0 V G S 0 G + V GS_JFET + S V DS_MOSFE T Forward current Reverse current, non-synchronous Reverse current, synchronous SiC cascode is fully on with gate-source voltage between 10 to 20 V, just like a MOSFET Current flows in either direction through JFET Reverse current flows through MOSFET body diode or through MOSFET channel In all cases, JFET gate-source voltage is essentially zero; JFET is fully on 14

Product Lineup Gen 2 SiC FETs Family Base PN Description Samples Production Die T0-220 TO247-3L TO247-4L D2pak-3L 1200V JFET UJN1208K 1200V 80mΩ SiC JFET Available MP MP MP 1200V JFET UJN1205K 1200V 45mΩ SiC JFET Available MP MP MP Family Base PN Description Samples Production Die T0-220 TO247-3L TO247-4L D2pak-3L 1200V Cascode UJC1206K 1200V 60mΩ SiC Cascode Available MP MP MP 1200V Cascode UJC1210K 1200V 100mΩ SiC Cascode Available MP MP MP 1200V Cascode UJC1220KS 1200V 220mΩ SiC Cascode Available ES ES ES 650V Cascode UJC06505K 650V 45mΩ SiC Cascode Available MP MP ES MP No gate oxide For high temperature operation MP: Mass Production ES: Engineering samples available D: in Development No Intrinsic Diode 1.2kV SiC JFET +2V +12 V -15V +0 V Intrinsic Diode (Inductive Loads) Normally On 30V Si MOSFET Available Co-Packaged Normally Off (Cascode) 15

Product Lineup Gen 3 SiC FETs Family Base PN Description T0-220 TO247-3L TO247-4L D2pak -7L D2pak-3L 1200V Cascode UJ3C120015K3S 1200V 150mΩ SiC Cascode - Q1 18 Q3 18 Q1 18 1200V Cascode UJ3C120080K3S 1200V 80mΩ SiC Cascode - ES/ Q1 18 Q3 18 D 1200V Cascode UJ3C120040K3S 1200V 40mΩ SiC Cascode - ES/ Q1 18 Q3 18 D 1200V Cascode UJ3C120020K3S 1200V 20mΩ SiC Cascode - - Q3 18 D 650V Cascode UJ3C065080K3S 650V 80mΩ SiC Cascode Q2 18 ES/ Q1 18 D D ES / Q2 18 650V Cascode UJ3C065042K3S 650V 42mΩ SiC Cascode Q2 18 Q2 18 D D D 650V Cascode UJ3C065030K3S 650V 30mΩ SiC Cascode Q2 18 ES/ Q1 18 D D ES / Q2 18 MP: Mass Production ES: Engineering samples available D: in Development 16

650V Cascode UJC6505T Cascode SCT2120AF SiC MOSFET GS66508B GaN HEMT IPW65R045C7 Si Superjunction PFSB Efficiency Vin=400V, Vo=48V, 75kHz 17

Customer Reference + = Technological partnership Phase shifted Full bridge (need for an excellent body diode) 10kW battery charger 30% higher output power with SiC Cascode in same dimensions IGBT replacement and ease of use through Standard Gate drive 1.5% higher efficiency 18

Customer Reference + = Bidirectional converter which is used today in around 50% of the DC Fast Charger in Europe today No external SiC Schottky diode in hard switched application needed due to significant reduced body diode (<2V) compared to SiC MOS System Cost reduction due to Cascode usage Modular reliable systems with proven technology up to 150kW Uni and bidirectional from 6kW up to 25kW with V2G / V2H operation CHAdeMO and CCS compatible 97% efficient, 500V DC and 1000V DC Noiseless Power 19

Behlke 20

6.5kV SiC Module The 4.5-6.5kV Modules targets higher power (MW) applications where systems can benefit from higher DC-Link voltages and faster switching frequencies: Applications Variable Speed Industrial Motor Drives HV Battery Stacking Transformerless Grid-Tie Heavy Vehicle Traction Converters Hybridization of Ships Flywheel: High Voltage Stators Trains GVEA BESS 5kV DC-Link (Alaska)

3300V MOSFETs R ds,on Breakdown (mω cm 2 ) Value Percentage Source + Channel 1.91 19.1% JFET 1.94 19.5% Epi 5.98 59.9% Sub + B/S 0.15 1.5% Total 10.0 100% Rds,on Breakdown (mω cm2) Sub + B/S; 0,15; 2% Epi; 5,98; 60% Source + Channel; 1,91; 19% JFET; 1,94; 19% With +15V/-5V gate drive similar to IGBTs, RdsA increases to 11.2mohmcm2 with 10us Short circuit withstand capability. 22

Preliminary Die Datasheet of 1700V -7.5mΩ SiC JFET

Technical Approach USCi prototype demonstrated

In development

Technical Approach Comparison with Other Unipolar Approaches SiC Chip Technology Half-Bridge Module Technology Approach SiC MOSFET Only SiC Stack Cascode Proposed Module Die 6.5kV MOSFET Chip 6.5kV JFET Chip 1.7kV JFET Chip R DS A 63mΩ-cm 2 63mΩ-cm 2 3mΩ-cm 2 Die Size 8.33 x 8.33 mm 2 8.33 x 8.33 mm 2 7.7 x 7.7 mm 2 Die Max. Ron @ RT 160mΩ 160mΩ 5.5mΩ Max. Ron @ RT 20mΩ 20mΩ 20mΩ Switch Configuration 8 dies in parallel 8 dies in parallel Projected Module Cost Structure (150mm epi-wafer, ~70% die yield) Module Performance 5 JFETs (each contains 2 dies in parallel) in series Total Die Count 16 16 20 $20 / A $20 / A $11 / A Typical V TH @ 150 C 2.0V 3.7V 3.7V Practical Gate Drive -5V to + 20V Standard 0V to +12V Standard 0V to +12V Gate Charge Anti-Parallel Diode Qgs 400 nc 120 nc 30 nc Total Qg 2360 nc 400 nc 100 nc Built-in Built-in Built-in High Qrr Low Qc Low Qc Knee voltage: > 2V Knee voltage: 0.7V Knee voltage: 0.7V Due to the use of lower cost SiC 1700V devices, module cost 2X lower Much better gate charge and diode Qc

Ultra Low RDS,on devices Solid State Circuit Breaker 27

Summary SiC Diodes Best-in-class performance Highest currents available USCi matched with industry leading die sizes (cost) SiC JFET Best in class devices for special applications SiC Cascodes Ease of use (12V/0V or 20V / -5V Gate Drive) Performance (Low Vf, Qrr Body-diode, switching energies) Reliability (No SiC Gate oxide, No SiC body diode, 5V Threshold voltage) Guaranteed 4us Short circuit typ 8us (highest in SiC industry) Cost (no SiC FWD necessary, lowest specific Rds,on in industry) Additional Available on: App Notes, Datasheets and SPICE models available at www.unitedsic.com Various Eval Boards already available or available soon (PSFB, PFC, Flyback, LLC, H-Bridge,..) Contact: Christopher Rocneanu, Director Sales, +4915121063411, cro@unitedsic.com 28

THANK YOU! QUESTIONS? 29