MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

Similar documents
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k

MMUN2111LT1G, SMMUN21xxLT3G. NSVMMUN2111LT1G Series. Bias Resistor Transistors

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

MUN5311DW1T1G Series.

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BC846ALT1G Series. General Purpose Transistors. NPN Silicon

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

UMC2NT1, UMC3NT1, UMC5NT1

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor

BC857BTT1G. General Purpose Transistor. PNP Silicon

NSTB1002DXV5T1G, NSTB1002DXV5T5G

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon

NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS

NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

DTC114EET1 Series, SDTC114EET1 Series

NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m

MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon

MMBT5087L. Low Noise Transistor. PNP Silicon

BC846BM3T5G. General Purpose Transistor. NPN Silicon

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor

BC856ALT1G Series. General Purpose Transistors. PNP Silicon

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m

NSVF5501SK RF Transistor for Low Noise Amplifier

EMC5DXV5T1, EMC5DXV5T5

MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m

NSVS50030SB3 NSVS50031SB3. Bipolar Transistor ( )50 V, ( )3 A, Low V CE (sat), (PNP)NPN Single

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

FJP13007 High Voltage Fast-Switching NPN Power Transistor

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL

KSC2383 NPN Epitaxial Silicon Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

MJD44H11 (NPN) MJD45H11 (PNP)

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

Transcription:

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Digital Transistors (BRT) R = 47 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q0 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T A = ) PIN BASE (INPUT) R R2 PIN COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MARKING DIAGRAMS PIN CONNECTIONS XX M XXX M SC 59 CASE 8D STYLE SOT 2 CASE 8 STYLE 6 Rating Symbol Max Unit Collector Base Voltage V CBO 50 Collector Emitter Voltage V CEO 50 XX M SC 70/SOT 2 CASE 49 STYLE Collector Current Continuous I C 00 madc Input Forward Voltage V IN(fwd) 40 Input Reverse Voltage V IN(rev) 0 XX M SC 75 CASE 46 STYLE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX M SOT 72 CASE 6AA STYLE X M SOT 2 CASE 524AA STYLE XXX = Specific Device Code M = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 202 October, 206 Rev. 4 Publication Order Number: DTC44E/D

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Table. ORDERING INFORMATION Device Part Marking Package Shipping MUN22TG, SMUN22TG* 8C SC 59 000 / Tape & Reel MMUN22LTG, SMMUN22LTG* A8C SOT 2 SMMUN22LTG A8C SOT 2 MUN52TG, SMUN52TG* 8C SC 70/SOT 2 DTC44EETG, SDTC44EETG* 8C SC 75 DTC44EMT5G, NSVDTC44EMT5G* 8C SOT 72 NSBC44EFT5G D SOT 2 000 / Tape & Reel 0000 / Tape & Reel 000 / Tape & Reel 000 / Tape & Reel 8000 / Tape & Reel 8000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q0 Qualified and PPAP Capable. 00 P D, POWER DISSIPATION (mw) 250 200 50 00 50 () (2) () (4) (5) () SC 75 and SC 70/SOT2; Minimum Pad (2) SC 59; Minimum Pad () SOT 2; Minimum Pad (4) SOT 2; 00 mm 2, oz. copper trace (5) SOT 72; Minimum Pad 0 50 25 0 25 50 75 00 25 50 AMBIENT TEMPERATURE ( C) Figure. Derating Curve 2

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Table 2. THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS (SC 59) (MUN22) Total Device Dissipation T A = (Note ) Derate above (Note ) Thermal Resistance, (Note ) Junction to Ambient Characteristic Symbol Max Unit P D 20 8.8 2.7 R JA 540 70 mw mw/ C Thermal Resistance, (Note ) Junction to Lead R JL 264 287 Junction and Storage Temperature Range T J, T stg 55 to +50 C THERMAL CHARACTERISTICS (SOT 2) (MMUN22L) Total Device Dissipation T A = (Note ) Derate above (Note ) Thermal Resistance, (Note ) Junction to Ambient Thermal Resistance, (Note ) Junction to Lead P D 246 400 2.0.2 R JA 508 R JL 74 208 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +50 C THERMAL CHARACTERISTICS (SC 70/SOT 2) (MUN52) Total Device Dissipation T A = (Note ) Derate above (Note ) Thermal Resistance, (Note ) Junction to Ambient Thermal Resistance, (Note ) Junction to Lead P D 202 0.6 2.5 R JA 68 40 R JL 280 2 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +50 C THERMAL CHARACTERISTICS (SC 75) (DTC44EE, SDTC44EE) Total Device Dissipation T A = (Note ) Derate above (Note ) Thermal Resistance, (Note ) Junction to Ambient P D 200 00.6 2.4 R JA 600 400 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +50 C THERMAL CHARACTERISTICS (SOT 72) (DTC44EM) Total Device Dissipation T A = (Note ) Derate above (Note ) Thermal Resistance, (Note ) Junction to Ambient P D 260 600 2.0 4.8 R JA 480 205 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +50 C. FR 4 @ Minimum Pad. 2. FR 4 @.0 x.0 Inch Pad.. FR 4 @ 00 mm 2, oz. copper traces, still air. 4. FR 4 @ 500 mm 2, oz. copper traces, still air.

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Table 2. THERMAL CHARACTERISTICS Characteristic THERMAL CHARACTERISTICS (SOT 2) (NSBC44EF) Total Device Dissipation T A = (Note ) (Note 4) Derate above (Note ) (Note 4) Thermal Resistance, (Note ) Junction to Ambient (Note 4) Symbol Max P D 254 297 2.0 2.4 R JA 49 42 Unit mw mw/ C Thermal Resistance, Junction to Lead (Note ) R JL 9 Junction and Storage Temperature Range T J, T stg 55 to +50 C. FR 4 @ Minimum Pad. 2. FR 4 @.0 x.0 Inch Pad.. FR 4 @ 00 mm 2, oz. copper traces, still air. 4. FR 4 @ 500 mm 2, oz. copper traces, still air. Table. ELECTRICAL CHARACTERISTICS (T A =, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Base Cutoff Current (V CB = 50 V, I E = 0) I CBO 00 nadc Collector Emitter Cutoff Current (V CE = 50 V, I B = 0) Emitter Base Cutoff Current (V EB = 6.0 V, I C = 0) Collector Base Breakdown Voltage (I C = 0 A, I E = 0) Collector Emitter Breakdown Voltage (Note 5) (I C = 2.0 ma, I B = 0) ON CHARACTERISTICS DC Current Gain (Note 5) (I C = 5.0 ma, V CE = 0 V) Collector Emitter Saturation Voltage (Note 5) (I C = 0 ma, I B = 0. ma) Input Voltage (off) (V CE = 5.0 V, I C = 00 A) Input Voltage (on) (V CE = 0. V, I C = 2.0 ma) Output Voltage (on) (V CC = 5.0 V, V B =.5 V, R L =.0 k ) Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L =.0 k ) CEO 500 I EBO 0. V (BR)CBO 50 V (BR)CEO 50 h FE 80 40 V CE(sat) 0.25 V i(off).2 0.8 V i(on).0.6 V OL 0.2 V OH 4.9 nadc madc Input Resistor R 2.9 47 6. k Resistor Ratio R /R 2 0.8.0.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 00 msec, Duty Cycle 2%. 4

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF TYPICAL CHARACTERISTICS MUN22, MMUN22L, MUN52, DTC44EE, SDTC44EE, DTC44EM V CE(sat), COLLECTOR EMITTER VOLTAGE (V) 0 I C /I B = 0 T A = 75 C 0. 0.0 0 20 40 50 h FE, DC CURRENT GAIN 000 V CE = 0 V T A =75 C 00 0 0 00 Figure 2. V CE(sat) vs. I C Figure. DC Current Gain.2 00 C ob, OUTPUT CAPACITANCE (pf) 2.8 2.4 2.0.6.2 0.8 0.4 0 0 0 20 0 40 V R, REVERSE VOLTAGE (V) f = 0 khz I E = 0 A T A = 50 0 T A = 75 C 0. 0.0 V O = 5 V 0.00 0 2 4 6 8 0 V in, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 00 V O = 0.2 V V in, INPUT VOLTAGE (V) 0 T A = 75 C 0. 0 0 20 0 40 50 Figure 6. Input Voltage vs. Output Current 5

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF TYPICAL CHARACTERISTICS NSBC44EF V CE(sat), COLLECTOR EMITTER VOLTAGE (V) 0 I C /I B = 0 55 C 50 C 0. 0.0 0 0 20 0 40 50 Figure 7. V CE(sat) vs. I C h FE, DC CURRENT GAIN 000 V CE = 0 V 00 0 50 C 55 C 0. 0 00 Figure 8. DC Current Gain C ob, OUTPUT CAPACITANCE (pf) 2.4 2.0.6.2 0.8 0.4 f = 0 khz I E = 0 A T A = 00 0 0. 0.0 50 C 55 C V O = 5 V 0 0 0 20 0 40 50 0.00 0 4 8 2 6 20 24 28 V R, REVERSE VOLTAGE (V) V in, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure 0. Output Current vs. Input Voltage 00 V in, INPUT VOLTAGE (V) 0 55 C 50 C V O = 0.2 V 0. 0 0 20 0 40 50 Figure. Input Voltage vs. Output Current 6

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF PACKAGE DIMENSIONS SC 59 CASE 8D 04 ISSUE H D NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: MILLIMETER. H E A e 2 b E A L C MILLIMETERS DIM MIN NOM MAX MIN A.00.5.0 0.09 A 0.0 0.06 0.0 0.00 b 0.5 0.4 0.50 0.04 c 0.09 0.4 0.8 0.00 D 2.70 2.90.0 0.06 E.0.50.70 0.05 e.70.90 2.0 0.067 L 0.20 0.40 0.60 0.008 H E 2.50 2.80.00 0.099 STYLE : PIN. BASE 2. EMITTER. COLLECTOR INCHES NOM MAX 0.045 0.05 0.002 0.004 0.07 0.020 0.005 0.007 0.4 0.22 0.059 0.067 0.075 0.08 0.06 0.024 0.0 0.8 SOLDERING FOOTPRINT* 0.95 0.07 0.95 0.07 2.4 0.094.0 0.09 0.8 0.0 SCALE 0: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF PACKAGE DIMENSIONS SOT 2 (TO 26) CASE 8 08 ISSUE AR A E A D 2 e TOP VIEW SIDE VIEW HE L X b L VIEW C SEE VIEW C c END VIEW T 0.25 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89.00. 0.05 0.09 0.044 A 0.0 0.06 0.0 0.000 0.002 0.004 b 0.7 0.44 0.50 0.05 0.07 0.020 c 0.08 0.4 0.20 0.00 0.006 0.008 D 2.80 2.90.04 0.0 0.4 0.20 E.20.0.40 0.047 0.05 0.055 e.78.90 2.04 0.070 0.075 0.080 L 0.0 0.4 0.55 0.02 0.07 0.022 L 0.5 0.54 0.69 0.04 0.02 0.027 H E 2.0 2.40 2.64 0.08 0.094 0.04 T 0 0 0 0 STYLE 6: PIN. BASE 2. EMITTER. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 2.90 X 0.90 X 0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 8

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF PACKAGE DIMENSIONS SC 70 (SOT 2) CASE 49 04 ISSUE N D e NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. H E 2 e E b MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90.00 0.02 0.05 0.040 A 0.00 0.05 0.0 0.000 0.002 0.004 A2 0.70 REF 0.028 REF b 0.0 0.5 0.40 0.02 0.04 0.06 c 0.0 0.8 0.25 0.004 0.007 0.00 D.80 2.0 2.20 0.07 0.08 0.087 E.5.24.5 0.045 0.049 0.05 e.20.0.40 0.047 0.05 0.055 e 0.65 BSC 0.026 BSC L 0.20 0.8 0.56 0.008 0.05 0.022 H E 2.00 2.0 2.40 0.079 0.08 0.095 0.05 (0.002) A A A2 L c STYLE : PIN. BASE 2. EMITTER. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 0.9 0.05 0.7 0.028.9 0.075 SCALE 0: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF PACKAGE DIMENSIONS SC 75/SOT 46 CASE 46 ISSUE F b PL 0.20 (0.008) M D E 2 e D H E 0.20 (0.008) E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.70 0.80 0.90 0.027 0.0 0.05 A 0.00 0.05 0.0 0.000 0.002 0.004 b 0.5 0.20 0.0 0.006 0.008 0.02 C 0.0 0.5 0.25 0.004 0.006 0.00 D.55.60.65 0.059 0.06 0.067 E 0.70 0.80 0.90 0.027 0.0 0.05 e.00 BSC 0.04 BSC L 0.0 0.5 0.20 0.004 0.006 0.008 H E.50.60.70 0.06 0.06 0.065 C L A A STYLE : PIN. BASE 2. EMITTER. COLLECTOR SOLDERING FOOTPRINT* 0.56 0.04.80 0.07 0.787 0.0 0.508 0.020.000 0.09 SCALE 0: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF PACKAGE DIMENSIONS SOT 72 CASE 6AA ISSUE D b 2X e D 2 TOP VIEW X X L2 BOTTOM VIEW E Y 2X b 0.08 X Y X L A H E C SIDE VIEW NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS DIM MIN NOM MAX A 0.45 0.50 0.55 b 0.5 0.2 0.27 b 0.25 0. 0.7 C 0.07 0.2 0.7 D.5.20.25 E 0.75 0.80 0.85 e 0.40 BSC H E.5.20.25 L 0.29 REF L2 0.5 0.20 0.25 STYLE : PIN. BASE 2. EMITTER. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE.50 X 0.52 0.6 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF PACKAGE DIMENSIONS SOT 2 CASE 524AA ISSUE C c 2 D X E TOP VIEW H E SIDE VIEW Y A NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 0.4 0.40 b 0.5 0.28 b 0.0 0.20 c 0.07 0.7 D 0.75 0.85 E 0.55 0.65 e 0.5 0.40 H E 0.95.05 L 0.85 REF L2 0.05 0.5 e X L2 b 0.08 X Y STYLE : PIN. BASE 2. EMITTER. COLLECTOR 2X b BOTTOM VIEW X L SOLDERING FOOTPRINT*.20 X 0.4 0.26 0.8 2X 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 2nd Pkwy, Aurora, Colorado 800 USA Phone: 0 675 275 or 800 44 860 Toll Free USA/Canada Fax: 0 675 276 or 800 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 790 290 Japan Customer Focus Center Phone: 8 587 050 2 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative DTC44E/D