Green V +75 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) I D T C = +25 C V 5mΩ @V GS = V 4A BV DSS Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Features Rated to +75 C Ideal for High Ambient Temperature Environments % Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance High BV DSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes & 2) Halogen and Antimony Free. Green Device (Note 3) Applications Mechanical Data Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO22AB Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-22, Method 28 Terminal Connections: See Diagram Below Weight:.85 grams (Approximate) TO22AB Top View Bottom View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging TO22AB 5 Pieces/Tube Notes:. EU Directive 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http:///quality/lead_free.html for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. Marking Information THH5S YYWW =Manufacturer s Marking THH5S = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 7 = 27) WW or WW = Week Code ( to 53) of 6 June 27
Maximum Ratings (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS V Gate-Source Voltage V GSS ±2 V Continuous Drain Current T C = +25 C 4 I D T C = + C 99 A Pulsed Drain Current (μs Pulse, Duty Cycle = %) I DM 4 A Maximum Continuous Body Diode Forward Current T C = +25 C I S A Pulsed Body Diode Forward Current (μs Pulse, Duty Cycle = %) I SM 4 A Avalanche Current, L = 3mH (Note 7) I AS 9 A Avalanche Energy, L = 3mH (Note 7) E AS 542 mj Avalanche Current, L =.mh I AS 25 A Avalanche Energy, L =.mh E AS 3.2 mj Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T A = +25 C P D 2.9 W Thermal Resistance, Junction to Ambient (Note 5) R θja 5 C/W Total Power Dissipation T C = +25 C P D 87 W Thermal Resistance, Junction to Case R θjc.8 C/W Operating and Storage Temperature Range T J, T STG -55 to +75 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = ma Zero Gate Voltage Drain Current I DSS µa V DS = 8V, V GS = V Gate-Source Leakage I GSS ± na V GS = ±2V, V DS = V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS(TH) 2 4 V V DS = V GS, I D = 25µA Static Drain-Source On-Resistance R DS(ON) 3.8 5 mω V GS = V, I D = 3A Diode Forward Voltage V SD.3 V V GS = V, I S = 3A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C ISS 8,474 V pf DS = 5V, V GS = V Output Capacitance C OSS,68 f = MHz Reverse Transfer Capacitance C RSS 78 Gate Resistance R g.4 Ω V DS = V, V GS = V, f = MHz Total Gate Charge Q G.7 Gate-Source Charge Q GS 28.9 nc V DD = 5V, I D = 3A, V GS = V Gate-Drain Charge Q GD 2.3 Turn-On Delay Time t D(ON) 29.9 Turn-On Rise Time t R 3.3 Turn-Off Delay Time t D(OFF) 79.7 ns Turn-Off Fall Time t F 4.6 Reverse Recovery Time t RR 7 ns Reverse Recovery Charge Q RR 8 nc V DD = 5V, V GS = V, I D = 3A, R g = 6Ω I F = 3A, di/dt = A/µs Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 June 27
R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (mω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (mω) 5. 45. 4. 35. 3. V GS =.V V GS = 8.V V GS = 6.V V GS = 4.5V 3 25 2 V DS = 5.V T J = 75 T J = 5 25. 5 T J = 25 2. 5.. 5.. V GS = 4.V V GS = 3.4V V GS = 3.6V V GS = 3.8V.5.5 2 2.5 3 V DS, DRAIN-SOURCE VOLTAGE (V) Figure.Typical Output Characteristic 5 T J = 25 T J = -55 T J = 85 2 3 4 5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 6. 3 5.5 V GS = 6.V 25 5. 2 4.5 4. V GS = V 5 I D = 3A 3.5 5 3. 2 4 6 8 2 4 6 8 2 I D, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 2 4 6 8 2 V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.2. V GS =V T J = 5 T J = 75 2.2 2.8 V GS = V, I D = 3A.8.6.4.2 T J = 25 T J = 85 T J = 25 T J = -55.6.4.2.8.6 V GS = 6.V, I D = 3A 5 5 2 25 3 Figure 5. Typical On-Resistance vs. Drain Current and Temperature.4-5 -25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature 3 of 6 June 27
V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) V GS(TH), GATE THRESHOLD VOLTAGE (V).4 3.5.2 3..8.6 V GS = 6.V, I D = 3A 2.5 2.5 I D = 25μA I D = ma.4 V GS = V, I D = 3A.2.5-5 -25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature -5-25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Temperature 3 25 V GS = V f=mhz C iss 2 5 C oss 5 T J = 75 T J = 85 T J = 5 T J = 25 T J = 25 T J = -55.3.6.9.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current C rss 2 3 4 5 6 7 8 9 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R DS(ON) LIMITED P W =µs 8 6 P W =μs P W =µs 4 2 V DS = 5V, I D = 3A 2 4 6 8 2 Qg (nc) Figure. Gate Charge. P W =ms T J(MAX) =75 T C =25 P W =ms Single Pulse P W =ms DUT on infinite heatsink P W =s V GS =V. V DS, DRAIN-SOURCE VOLTAGE (V) Figure 2. SOA, Safe Operation Area 4 of 6 June 27
r(t), TRANSIENT THERMAL RESISTANCE D=.5 D=.3 D=.7 D=.9. D=. D=.5. D=.2 D=.. D=.5 D=Single Pulse E-6 E-5.... t, PULSE DURATION TIME (sec) Figure 3. Transient Thermal Resistance R θjc (t) = r(t) * R θjc R θjc =.7 /W Duty Cycle, D = t / t2 Package Outline Dimensions Please see http:///package-outlines.html for the latest version. TO22AB D L Q D b2 e E E/2 Ø P L2 L b H A A2 c A H E D2 TO22AB Dim Min Max Typ A 3.56 4.82 - A.5.39 - A2 2.4 2.92 - b.39..8 b2.5.77.24 c.356.6 - D 4.22 6.5 - D 8.39 9. - D2.45 2.87 - e - - 2.54 e - - 5.8 E 9.66.66 - E 6.86 8.89 - H 5.85 6.85 - L 2.7 4.73 - L - 4.42 - L2 5.8 7.5 6. P 3.54 4.8 - Q 2.54 3.42 - All Dimensions in mm e 5 of 6 June 27
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