ADD-A-PAK Generation II Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/6 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ADD-A-PAK PRODUCT SUMMARY I T(A) or I F(A) 45 A/6 A Type Modules - Thyristor, Standard BENEFITS Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate Up to 16 High surge capability Easy mounting on heatsink MECHANICAL DESCRIPTION The ADD-A-PAK generation II, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS, and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS S-SK.41 S-SK.56 UNITS I T(A) or I F(A) 85 C 45 6 I O(RMS) As AC switch 135 I TSM, 5 Hz 85 12 I FSM 6 Hz 89 1256 A I 2 t 5 Hz 3.61 7.2 6 Hz 3.3 6.57 ka 2 s I 2 t 36.1 72 ka 2 s RRM Range 4 to 16 4 to 16 T Stg -4 to 125 C T J -4 to 125 C Revision: 21-Mar-14 1 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
ELECTRICAL SPECIFICATIONS OLTAGE RATINGS TYPE NUMBER S-SK.41 S-SK.56 OLTAGE CODE RRM, MAXIMUM REPETITIE PEAK REERSE OLTAGE RSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE DRM, MAXIMUM REPETITIE PEAK OFF-STATE OLTAGE, GATE OPEN CIRCUIT 4 4 5 4 6 6 7 6 8 8 9 8 1 1 12 12 13 12 14 14 15 14 16 16 17 16 I RRM, I DRM AT 125 C ma 15 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS SK.41 SK.56 UNITS Maximum average on-state current (thyristors) I T(A) conduction, half sine wave, Maximum average forward current (diodes) I F(A) T C = 85 C 45 6 Maximum continuous RMS on-state current, as AC switch Maximum peak, one-cycle non-repetitive on-state or forward current Notes (1) I 2 t for time t x = I 2 t x t x (2) Average power = T(TO) x I T(A) + r t x (I T(RMS) ) 2 (3) 16.7 % x x I A < I < x I A (4) I > x I A or I O(RMS) 135 I TSM or I FSM t = 1 ms No voltage Sinusoidal 85 12 t = 8.3 ms reapplied half wave, 89 1256 t = 1 ms % RRM initial T J = 715 t = 8.3 ms reapplied T J maximum 75 156 t = 1 ms No voltage 3.61 7.2 t = 8.3 ms reapplied Maximum I 2 t for fusing I 2 Initial T J = 3.3 6.57 t ka T J maximum 2 s t = 1 ms % RRM 2.56 5.1 t = 8.3 ms reapplied 2.33 4.56 Maximum I 2 t for fusing I 2 t (1) t =.1 ms to 1 ms, no voltage reapplied 36.1 72 ka T J = T J maximum 2 s Low level (3) 1.8.91 Maximum value or threshold voltage (2) T(TO) T J = T J maximum High level (4) 1.12 1.2 Maximum value of on-state slope resistance Low level (3) 4.7 4.27 r (2) t T J = T J maximum High level (4) 4.5 3.77 TM I TM = x I T(A) Maximum peak on-state or forward voltage T J = 25 C 1.81 1.7 FM I FM = x I F(A) Maximum non-repetitive rate of rise of T J = 25 C, from.67 DRM, di/dt 15 A/μs turned on current I TM = x I T(A), I g = 5 ma, t r <.5 μs, t p > 6 μs T J = 25 C, anode supply = 6, Maximum holding current I H 2 resistive load, gate open circuit ma Maximum latching current I L T J = 25 C, anode supply = 6, resistive load 4 4 I (RMS) I (RMS) A m Revision: 21-Mar-14 2 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TRIGGERING PARAMETER SYMBOL TEST CONDITIONS S-SK.41 S-SK.56 UNITS Maximum peak gate power P GM 1 Maximum average gate power P G(A) 2.5 W Maximum peak gate current I GM 2.5 A Maximum peak negative gate voltage - GM 1 Maximum gate voltage required to trigger GT T J = 25 C Anode supply = 6 resistive load 2.5 T J = -4 C 4. T J = 125 C 1.7 T J = 25 C Anode supply = 6 resistive load 15 ma T J = -4 C 27 T J = 125 C 8 Maximum gate voltage that will not trigger GD T J = 125 C, rated DRM applied.25 Maximum gate current that will not trigger I GD T J = 125 C, rated DRM applied 6 ma BLOCKING PARAMETER SYMBOL TEST CONDITIONS S-SK.41 S-SK.56 UNITS Maximum peak reverse and off-state leakage current at RRM, DRM I RRM, I DRM T J = 125 C, gate open circuit 15 ma Maximum RMS insulation voltage INS 5 Hz 3 (1 min) 36 (1 s) Maximum critical rate of rise of off-state voltage d/dt T J = 125 C, linear to.67 DRM /μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS S-SK.41 S-SK.56 UNITS Junction operating and storage T J, T Stg -4 to 125 C temperature range Maximum internal thermal resistance, R thjc DC operation.44.35 junction to case per leg C/W Typical thermal resistance, Mounting surface flat, smooth and R thcs.1 case to heatsink per module greased Mounting torque ± 1 % to heatsink A mounting compound is recommended 4 and the torque should be rechecked after a period of 3 hours to allow for the spread busbar 3 of the compound. Approximate weight 75 g 2.7 oz. Case style JEDEC AAP GEN II (TO-24AA) Nm R CONDUCTION PER JUNCTION DEICES SINE HALF WAE CONDUCTION RECTANGULAR WAE CONDUCTION 9 6 3 9 6 3 SK.41...11.131.17.23.342.85.138.177.235.345 SK.56...88.14.134.184.273.7.111.143.189.275 UNITS C/W Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC Revision: 21-Mar-14 3 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Maximum allowable case temperature ( C) 13 12 11 SK.41 Series RthJC (DC) =.44 C/W 9 9 6 3 8 1 2 3 4 5 Maximum average on-state power loss (W) 12 8 6 4 9 6 3 RMS limit DC 2 SK.41 Series, 1 2 3 4 5 6 7 8 Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum allowable case temperature ( C) 13 12 11 SK.41 Series RthJC (DC) =.44 C/W DC 9 9 8 6 3 7 1 2 3 4 5 6 7 8 Fig. 2 - Current Ratings Characteristics Peak half sine wave on-state current (A) 8 7 6 5 4 At any rated load condition and with rated rrm applied following surge Initial Tj = Tj max @ 6 Hz.83 s @ 5 Hz.s 3 1 1 Number of equal amplitude half cycle current pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum average on-state power loss (W) 8 7 6 5 4 3 2 9 6 3 RMS limit 1 SK.41 Series, 5 1 15 2 25 3 35 4 45 5 Fig. 3 - On-State Power Loss Characteristics Peak half sine wave on-state current (A) 9 8 7 6 5 4 Maximum Non-repetitive Surge Current ersus Pulse Train Duration. Control of conduction may not be maintaned. Initial No oltage Reapplied Rated rrm reapplied 3.1.1 1 Pulse train duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 21-Mar-14 4 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Maximum total on-state power loss (W) 16 14 12 8 6 9 6 3 4 SK.41 Series 2 Per module 2 4 6 8 2 4 6 8 12 14 Total RMS output current (A) Fig. 7 - On-State Power Loss Characteristics RthSA =..3 C/W.5 C/W.7 C/W 1.5 C/W 2 C/W 3 C/W 5 C/W Maximum total power loss (W) 35 3 25 2 15 (sine) (rect) 2 x SK.41 Series 5 single phase bridge connected 2 4 6 8 2 4 6 8 12 14 Total output current (A) Fig. 8 - On-State Power Loss Characteristics RthSA =..2 C/W.3 C/W.5 C/W.7 C/W 1.5 C/W Maximum total power loss (W) 5 4 3 2 (rect) 3 x SK.41 Series three phase bridge connected 2 4 6 8 12 14 2 4 6 8 12 14 Total output current (A) Fig. 9 - On-State Power Loss Characteristics RthSA =..2 C/W.3 C/W.5 C/W.7 C/W Revision: 21-Mar-14 5 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Maximum allowable case temperature ( C) 13 12 11 RthJC (DC) =.35 C/W 9 9 6 3 8 1 2 3 4 5 6 7 Maximum average on-state power loss (W) 14 12 8 6 4 2 9 6 3 RMS limit DC, 2 4 6 8 Fig. 1 - Current Ratings Characteristics Fig. 13 - On-State Power Loss Characteristics Maximum allowable case temperature ( C) 13 12 11 RthJC (DC) =.35 C/W DC 9 9 8 6 3 7 2 4 6 8 Fig. 11 - Current Ratings Characteristics Peak half sine wave on-state current (A) 1 9 8 7 6 5 At any rated load condition and with rated rrm applied following surge Initial Tj = Tj max @ 6 Hz.83 s @ 5 Hz.s 4 1 1 Number of equal amplitude half cycle current pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Maximum average on-state power loss (W) 8 6 4 9 6 3 RMS limit 2, 1 2 3 4 5 6 7 Fig. 12 - On-State Power Loss Characteristics Peak half sine wave on-state current (A) 13 12 1 9 8 7 6 5 Maximum Non-repetitive Surge Current ersus Pulse Train Duration. Control of conduction may not be maintained. Initial No oltage Reapplied Rated rrm reapplied 4.1.1 1 Pulse train duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current Revision: 21-Mar-14 6 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Maximum total on-state power loss (W) 25 2 15 5 9 6 3 Per module 2 4 6 8 12 14 2 4 6 8 12 14 Total RMS output current (A) Fig. 16 - On-State Power Loss Characteristics RthSA =..2 C/W.3 C/W.4 C/W.5 C/W.7 C/W 1.5 C/W 2 C/W 4 C/W Maximum total power loss (W) 6 5 4 3 2 (sine) (rect) 2 x single phase bridge connected 2 4 6 8 12 14 2 4 6 8 12 14 Total output current (A) Fig. 17 - On-State Power Loss Characteristics RthSA =..2 C/W.3 C/W.5 C/W.7 C/W 2 C/W Maximum total power loss (W) 7 6 5 4 3 2 (rect) 3 x three phase bridge connected 2 4 6 8 12 14 16 18 2 4 6 8 12 14 Total output current (A) Fig. 18 - On-State Power Loss Characteristics RthSA =..2 C/W.3 C/W.5 C/W.7 C/W Revision: 21-Mar-14 7 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Instantaneous on-state current (A) 1 SK. 41 Series Tj = 25 C Instantaneous on-state current (A) 1 SK. 56 Series Tj = 25 C 1.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. Instantaneous on-state voltage () 1.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. Instantaneous on-state voltage () Fig. 19 - On-State oltage Drop Characteristics Fig. 2 - On-State oltage Drop Characteristics Transient thermal impedance Z thjc ( C/W) 1.1 Steady state value RthJC =.44 C/W RthJC =.35 C/W (DC operation) SK.41 Series.1.1.1.1 1 1 Square wave pulse duration (s) Fig. 21 - Thermal Impedance Z thjc Characteristics Instantaneous gate voltage () 1 1 Rectangular gate pulse a)recommended load line for rated di/dt: 2, 3 ohms tr =.5 µs, tp >= 6 µs b)recommended load line for <= 3% rated di/ dt: 2, 65 ohms tr = 1 µs, tp >= 6 µs (a) (b) TJ = 125 C TJ = 25 C TJ = -4 C (1) PGM = W, tp = 5 µs (2) PGM = 5 W, tp = 1 ms (3) PGM = 2 W, tp = 25 ms (4) PGM = 1 W, tp = 5 ms (4) (3) (2) (1) GD IGD.1 SK. IRK.41../.56.. Series Freq uenc y Limit ed b y PG(A).1.1.1 1 1 Instantaneous gate current (A) Fig. 22 - Gate Characteristics Revision: 21-Mar-14 8 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
ORDERING INFORMATION TABLE Device code S-S K T 56 / 16 Note To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION 1 2 3 4 5 1 - product 2 - Module type 3 - Circuit configuration (see Circuit configuration table) 4 - Current code 5 - oltage code (see oltage Ratings table) 41 = 45 A 56 = 6 A CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING (1) ~ SKT 1 Two SCRs doubler circuit T 2 + (2) 3 4 5 7 6 - (3) G1 K1 K2 G2 (4) (5) (7) (6) (1) ~ SKH 1 SCR/diode doubler circuit, positive control H 2 + (2) 3 4 5 - (3) G1 K1 (4) (5) (1) ~ SKL 1 SCR/diode doubler circuit, negative control L 2 + (2) 3 7 6 - (3) K2 G2 (7) (6) (1) - SKN 1 SCR/diode common anodes N 2 + (2) 3 4 5 + (3) G1 K1 (4) (5) Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95368 Revision: 21-Mar-14 9 Document Number: 9463 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
ADD-A-PAK Generation II - Thyristor Outline Dimensions DIMENSIONS in millimeters (inches) Fast-on tab 2.8 x.8 (.11 x.3) 35 REF. 3 ±.5 (1.18 ±.2) 29 ±.5 (1 ±.2) iti M5 x.8 Screws M5 x.8 18 (.7) REF. 15.5 ±.5 (.6 ±.2) 6.7 ±.3 (.26 ±.12) 24 ±.5 (1 ±.2) 3 ± 1 (1.18 ±.39) 8 ±.3 (3.15 ±.12) 22.6 ±.2 (.89 ±.8) 6.3 ±.2 (.248 ±.8) 1 2 3 4 5 7 6 15 ±.5 (.59 ±.2) 2 ±.5 (.79 ±.2) 2 ±.5 (.79 ±.2) 92 ±.75 (3.6 ±.3) 5.8 ±.25 (.228 ±.1) 4 ±.2 (.157 ±.8) Document Number: 95368 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 11-Nov-8 1
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