Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO92/TO-226 package which is readily adaptable for use in automatic insertion equipment. Features Sensitive Gate Trigger Current 200 Maximum Low Reverse and Forward Blocking Current Maximum, T C = 1 C Low Holding Current 5 m Maximum Passivated Surface for Reliability and Uniformity Device Marking: Device Type, e.g., 2N60, Date Code PbFree Packages are vailable* SILICON CONTROLLED RECTIFIERS RMS, 30 200 G K MRKING DIGRM TO92 CSE 29 STYLE 2N xx YWW 1 2 3 xx Y WW Specific Device Code = Year = Work Week 1 2 3 PIN SSIGNMENT Cathode Gate node ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2008 November, 2008 Rev. 9 1 Publication Order Number: 2N60/D
MXIMUM RTINGS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive OffState oltage (Note 1) (T J = 40 to 1 C, Sine Wave, to 60 Hz, R GK = 1 k ) 2N60 2N61 2N62 2N64 DRM, RRM 30 60 0 200 On-State Current RMS (180 Conduction ngles; T C = 80 C) I T(RMS) *verage On-State Current (180 Conduction ngles) (T C = 67 C) (T C = 2 C) I T() 1 55 *Peak Non-repetitive Surge Current, T = 25 C (1/2 cycle, Sine Wave, 60 Hz) I TSM Circuit Fusing Considerations (t = 8.3 ms) I 2 t 0.4 2 s *verage On-State Current (180 Conduction ngles) (T C = 67 C) (T C = 2 C) I T() 1 55 *Forward Peak Gate Power (Pulse Width sec; T = 25 C) P GM 0.1 W *Forward verage Gate Power (T = 25 C, t = 8.3 ms) P G() 0.01 W *Forward Peak Gate Current (Pulse Width sec; T = 25 C) I GM *Reverse Peak Gate oltage (Pulse Width sec; T = 25 C) RGM *Operating Junction Temperature Range T J 40 to +1 C *Storage Temperature Range T stg 40 to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERML CHRCTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, JunctiontoCase (Note 2) R JC 75 C/W Thermal Resistance, Junctiontombient R J 200 C/W 2. This measurement is made with the case mounted flat side down on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data. 2
ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHRCTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) ( K = Rated DRM or RRM ) T C = 25 C T C = 1 C ON CHRCTERISTICS *Peak Forward OnState oltage (Note 4) (I TM = 1.2 peak @ T = 25 C) I DRM, I RRM TM 1.7 Gate Trigger Current (Continuous DC) (Note 5) *( K = 7.0 dc, R L = 0 ) T C = 25 C T C = 40 C Gate Trigger oltage (Continuous DC) (Note 5) T C = 25 C *( K = 7.0 dc, R L = 0 ) T C = 40 C *Gate NonTrigger oltage ( K = Rated DRM, R L = 0 ) T C = 1 C Holding Current (Note 3) T C = 25 C *( K = 7.0 dc, initiating current = 20 m) T C = 40 C I GT GT 200 3 1.2 GD 0.1 I H m Turn-On Time Delay Time Rise Time (I GT = m, D = Rated DRM, Forward Current =, di/dt = 6.0 / s t d t r s Turn-Off Time (Forward Current = pulse, Pulse Width = s, 0.1% Duty Cycle, di/dt = 6.0 / s, dv/dt = 20 / s, I GT = 1 m) 2N60, 2N61 2N62, 2N64 t q 30 s DYNMIC CHRCTERISTICS Critical Rate of Rise of OffState oltage (Rated DRM, Exponential, R GK = 1 k ) dv/dt 30 / s 3. R GK = 00 is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle 1%. 5. R GK current is not included in measurement. *Indicates JEDEC Registered Data. oltage Current Characteristic of SCR + Current node + Symbol DRM I DRM RRM I RRM TM I H Parameter Peak Repetitive Off State Forward oltage Peak Forward Blocking Current Peak Repetitive Off State Reverse oltage Peak Reverse Blocking Current Peak on State oltage Holding Current I RRM at RRM on state Reverse Blocking Region (off state) Reverse valanche Region TM I H + oltage I DRM at DRM Forward Blocking Region (off state) node 3
CURRENT DERTING T C, MXIMUM LLOWBLE CSE TEMPERTURE ( C) 130 120 1 0 90 80 70 60 = 30 = CONDUCTION NGLE 60 CSE MESUREMENT POINT - CENTER OF FLT PORTION 90 0 0.1 0.3 0.4 I T(), ERGE ON STTE CURRENT (MP) dc 120 180 Figure 1. Maximum Case Temperature a T, MXIMUM LLOWBLE MBIENT TEMPERTURE ( C) 130 1 90 70 = CONDUCTION NGLE TYPICL PRINTED CIRCUIT BORD MOUNTING = 30 60 90 120 180 30 0 0.1 0.3 0.4 I T(), ERGE ON STTE CURRENT (MP) Figure 2. Maximum mbient Temperature dc CURRENT DERTING i T, INSTNTNEOUS ON STTE CURRENT (MP) 0.7 0.3 0.1 0.07 0.05 0.03 0.02 T J = 1 C 25 C I TSM, PEK SURGE CURRENT (MP) P (), MXIMUM ERGE POWER DISSIPTION (WTTS) 7.0 7.0 20 30 70 0 NUMBER OF CYCLES Figure 4. Maximum NonRepetitive Surge Current 120 180 a 90 60 0.6 = CONDUCTION NGLE = 30 0.4 dc 0.01 0 1.5 v T, INSTNTNEOUS ON STTE OLTGE (OLTS) Figure 3. Typical Forward oltage 2.5 0 0 0.1 0.3 0.4 I T(), ERGE ON STTE CURRENT (MP) Figure 5. Power Dissipation 4
r(t), TRNSIENT THERML RESISTNCE NORMLIZED 0.1 0.05 0.02 0.01 0.002 0.005 0.01 0.02 0.05 0.1 20 t, TIME (SECONDS) Figure 6. Thermal Response TYPICL CHRCTERISTICS G, GTE TRIGGER OLTGE (OLTS) 0.7 0.6 0.4 K = 7.0 R L = 0 R GK = k 0.3 75 - -25 0 25 75 0 1 T J, JUNCTION TEMPERTURE ( C) Figure 7. Typical Gate Trigger oltage I GT, GTE TRIGGER CURRENT (NORMLIZED) 200 0 20 2N62 64 2N60 61 K = 7.0 R L = 0-75 - -25 0 25 75 0 1 T J, JUNCTION TEMPERTURE ( C) Figure 8. Typical Gate Trigger Current I H, HOLDING CURRENT (NORMLIZED) 4.0 0.6 2N62 64 K = 7.0 R L = 0 R GK = k 2N60,61 0.4-75 - -25 0 25 75 0 1 T J, JUNCTION TEMPERTURE ( C) Figure 9. Typical Holding Current 5
ORDERING INFORMTION Device Package Shipping 2N60 TO92 5,000 Units / Box 2N60G TO92 (PbFree) 5,000 Units / Box 2N60RLR TO92 2,000 / Tape & Reel 2N60RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N60RLRM TO92 2,000 / mmo Pack 2N60RLRMG TO92 (PbFree) 2000 / mmo Pack 2N61 TO92 5,000 Units / Box 2N61G TO92 (PbFree) 5,000 Units / Box 2N61RLR TO92 2,000 / Tape & Reel 2N61RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N62 TO92 5,000 Units / Box 2N62G TO92 (PbFree) 5,000 Units / Box 2N62RLR TO92 2,000 / Tape & Reel 2N62RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N64 TO92 5,000 Units / Box 2N64RLR TO92 2,000 / Tape & Reel 2N64RLRM TO92 2,000 / mmo Pack 2N64RLRMG 2N64RLRG TO92 (PbFree) TO92 (PbFree) 2,000 / mmo Pack 2000 / Tape & Reel 2N64G TO92 (PbFree) 00 Units / Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6
PCKGE DIMENSIONS R N B TO92 (TO226) CSE 2911 ISSUE M STRIGHT LED BULK PCK NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PCKGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LED DIMENSION IS UNCONTROLLED IN P ND BEYOND DIMENSION K MINIMUM. P L SETING INCHES MILLIMETERS PLNE K DIM MIN MX MIN MX 0.175 05 4.45 5.20 B 0.170 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 33 X X D G 0.045 0.055 1.15 1.39 H 0.095 2.42 2.66 G J 0.015 0.020 0.39 0 H J K 00 --- 12.70 --- C L --- 6.35 --- N 0.080 4 2.66 P --- 0.0 --- 2.54 SECTION XX R 0.115 --- 2.93 --- 1 N 0.135 --- 3.43 --- R B BENT LED TPE & REEL MMO PCK NOTES: 1. DIMENSIONING ND TOLERNCING PER SME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PCKGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LED DIMENSION IS UNCONTROLLED IN P ND BEYOND DIMENSION K MINIMUM. P T MILLIMETERS SETING PLNE K DIM MIN MX 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 4 G X X D G 2.40 2.80 J 0.39 0 K 12.70 --- J N 4 2.66 P 1. 4.00 C R 2.93 --- 3.43 --- SECTION XX 1 STYLE : N PIN 1. CTHODE 2. GTE 3. NODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 US Phone: 3036752175 or 8003443860 Toll Free US/Canada Fax: 3036752176 or 8003443867 Toll Free US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 8002829855 Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 421 33 790 29 Japan Customer Focus Center Phone: 813577338 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N60/D