Imprint Nanopatterning Solution Platform for IndustRial assessment NANO IMPRINT LITHOGRAPHY (NIL) FOR PHOTONICS APPLICATIONS Hubert TEYSSEDRE Stefan LANDIS Sandra BOS Laurent PAIN Yannick LE TIEC LETI, CEA-Tech Minatec Martin EIBELHUBER Walter ZORBACH Christine THANNER Maria LAURE Markus WIMPLINGER EV Group, Austria Micro Photonics, Berlin October 11 th 2016
NIL PROCESS EVG TECHNOLOGY Multi replicated working stamp Multi imprintsper working stamp MASTER Made by conventional lithography 2
INSPIRE: THE PROJECT S PHILOSOPHY End user partners INSPIRE foundry platform Master pilot line Metrology access Wafer prototyping Guaranteed cycle time A solution to bridge Technology and Industry needs Material Simulation Advanced metro Advanced stamps Equipment Integration INSPIRE assessment platform Infrastructure partners 3
STEP 1 Tool @EVG ROADMAP Market survey Technology analysis Develop Business Environment Infrastructure building Master Material Metrology Process 2015 H1/16 Initiate activities Technology Statement Uniformity Defectivity Overlay Some Key Partners already identified & involved Si Masters Metrology Methods Master manufacturing Metrology & defectivity H2/16 H2/18 Full regime Critical Dimension Uniformity (CDU) W2M & W2W strategy Tool assessment set-up Pattern Height measurement @wafer scalematerial & Defectivity Process density and map analysis Overlay qualification Scatterometry Technology learning and assessment First end-users requests STEP 2 Tool @LETI Customer support Integration / CoO Integration demo Full Process Modelling Solution 4
INSPIRE WITHIN STATE-OF-THE-ART TECHNOLOGICAL PLATFORMS Metrology solutions already qualified for INSPIRE Critical Dimensions and Depth CD-SEM: VERITY 4i+, CG4000, H9300 AFM: INSIGHT3D, FASTSCAN OPTICAL: IVS 200 SCATTEROMETRY: T600 STYLUS: HRP 340, P10, P15, P16 OPTICAL: T-MAP, NSX320, WYKO NT9300 Overlay OPTICAL: ARCHER 100, ALARM, IVS 200, DSM8 Defectivity Patterned wafer: KLA AITXP1, COMPLUS_4T, NSX320 Unpatterned wafer: SP1, SP2, SURF6420, SURF6200 Revue: INS3300A & AXIOSPECT 300A, HCG4000, H7800, FIB Expida & FIB Helios Observation Advanced CMOS/3D Platform 5600m² FIB-SEM & STEM: FIB Expida & FIB Helios TEM & STEM analysis: TEM Tecnai 270 200mm & 95 300mm equipments SEM X-section: MEB H5000 200mm MEMS Platform 2200m² SEM Wafer observation: H4160, H7800A 130 200 mm equipments EDX 5
INSPIRE: THE PROJECT S PHILOSOPHY End user partners INSPIRE foundry platform Advanced metro INSPIRE assessment platform Infrastructure partners 6
TECHNICAL OUTLINE Master Working stamp Multiple imprints 7
CRITICAL DIMENSION UNIFORMITY ASSESSMENT 8
CDU ASSESSMENT Simple design Layout Si master Trenches etched into Si Depth around 220 nm Measurement in cell center (rotated) Multiple imprints Multiple imprints Multiple imprints 9
Simple design 88 measurements / wafer CDU map on Si master CDU ASSESSMENT Mean value drift Stable dispersion 10
CDU ASSESSMENT Complex design Layout Si master Lines and dots with variable pitches and densities Multiple imprints Multiple imprints Multiple imprints 11
CDU ASSESSMENT Complex design 100 measurements / design / wafer Constant CD (452 nm), variable space Δ Ref: Master mean CD (452 nm) 12
DEFECTIVITY ASSESSMENT 13
DEFECTIVITY ASSESSMENT Defectivity on imprints Manageable evolution of the defect density Comparison with the first imprint Ref: Print #1 252 def/cm² 14
DEFECTIVITY ASSESSMENT Defectivity on imprints 5 consecutive imprints Optimized process 11 def/cm² 5 consecutive imprints #1 #2 #3 #4 #5 #0 #1 #2 #3 #4 #5 #0+ 15
ALIGNMENT ASSESSMENT 16
ALIGNMENT ASSESSMENT Layer 01 Layer 02 Layer 01/02 Used by the tool to perform unsuccessfull wafer scale alignement successfull Used by LETI to measure misalignment at wafer scale Image processing 17
ALIGNMENT ASSESSMENT Standard process vs Advanced process @Wafer Scale ± 4 µm ± 1,8 µm 18
CONCLUSION More than 50 000 images processed, 150 defectivity inspections and 5 000 profilometer scans achieved in one year CDU analysis brought up attractive results to prepare design rules for masters correction Defectivity and alignment are main topics for the second year of the program and promising improvements have already been observed The metrology platform for NIL assessment gains in maturity The strength of the INSPIRE program is ramping-up thanks to many partners interest 19
INSPIRE: THE PROJECT S PHILOSOPHY End user partners INSPIRE foundry platform Master pilot line Metrology access Wafer prototyping Guaranteed cycle time Material Simulation Advanced metro Advanced stamps Equipment Integration INSPIRE assessment platform Infrastructure partners 20
Imprint Nanopatterning Solution Platform for IndustRial assessment Thank you for your attention A solution to bridge Technology and Industry needs Contact us laurent.pain@cea.fr stefan.landis@cea.fr hubert.teyssedre@cea.fr yannick.letiec@cea.fr 21