200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. Features -11.5A, -200V, R DS(on) = 0.47Ω @ = -10 V Low gate charge ( typical 31 nc) Low Crss ( typical 30 pf) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant October 2008 QFET D S! G! G S D 2 -PAK FQB Series G D S I 2 -PAK FQI Series! D Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Units S Drain-Source Voltage -200 V I D Drain Current - Continuous (T C = 25 C) -11.5 A - Continuous (T C = 100 C) -7.27 A I DM Drain Current - Pulsed (Note 1) -46 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 810 mj I AR Avalanche Current (Note 1) -11.5 A E AR Repetitive Avalanche Energy (Note 1) 12 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P D Power Dissipation (T A = 25 C) * 3.13 W Power Dissipation (T C = 25 C) 120 W - Derate above 25 C 0.96 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case -- 1.04 C/W R θja Thermal Resistance, Junction-to-Ambient * -- 40 C/W R θja Thermal Resistance, Junction-to-Ambient -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount)
Elerical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = -250 µa -200 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = -250 µa, Referenced to 25 C -- - -- V/ C I DSS = -200 V, = 0 V -- -- -1 µa Zero Gate Voltage Drain Current = -160 V, T C = 125 C -- -- -10 µa I GSSF Gate-Body Leakage Current, Forward = -30 V, = 0 V -- -- -100 na I GSSR Gate-Body Leakage Current, Reverse = 30 V, = 0 V -- -- 100 na On Characteristics (th) Gate Threshold Voltage =, I D = -250 µa -3.0 -- -5.0 V R DS(on) Static Drain-Source On-Resistance = -10 V, I D = -5.75 A -- 0.36 0.47 Ω g FS Forward Transconductance = -40 V, I D = -5.75 A (Note 4) -- 6.4 -- S Dynamic Characteristics C iss Input Capacitance = -25 V, = 0 V, -- 920 1200 pf C oss Output Capacitance f = 1.0 MHz -- 190 250 pf C rss Reverse Transfer Capacitance -- 30 40 pf Switching Characteristics t d(on) Turn-On Delay Time -- 20 50 ns = -100 V, I D = -11.5 A, t r Turn-On Rise Time R G = 25 Ω -- 195 400 ns t d(off) Turn-Off Delay Time -- 40 90 ns t f Q g Turn-Off Fall Time Total Gate Charge (Note 4, 5) = -160 V, I D = -11.5 A, -- -- 60 31 130 40 ns nc Q gs Gate-Source Charge = -10 V -- 8.1 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 16 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- -11.5 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- -46 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = -11.5 A -- -- -5.0 V t rr Reverse Recovery Time = 0 V, I S = -11.5 A, -- 180 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 1.44 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.2mH, I AS = -11.5A, = -50V, R G = 25 Ω, Starting T J = 25 C 3. I SD -11.5A, di/dt 300A/µs, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics -I D, Drain Current [A] 10 1 Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 1. 250μs Pulse Test 2. T C = 25 -I D, Drain Current [A] 10 1 150 25-55 1. = -40V 2. 250μs Pulse Test 10 1 -, Drain-Source Voltage [V] 2 4 6 8 10 -, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.0 R DS(on) [Ω], Drain-Source On-Resistance 1.5 1.0 0.5 = - 10V = - 20V Note : T J = 25 0.0 0 10 20 30 40 -I D, Drain Current [A] -I DR, Reverse Drain Current [A] 10 1 150 25 1. = 0V 2. 250μs Pulse Test 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2400 2000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 10 = -40V = -100V Capacitance [pf] 1600 1200 800 400 C iss C oss C rss 1. = 0 V 2. f = 1 MHz -, Gate-Source Voltage [V] 8 6 4 2 = -160V Note : I D = -11.5 A 0 10 1 -, Drain-Source Voltage [V] 0 0 5 10 15 20 25 30 35 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. = 0 V 2. I D = -250 μa R DS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 1. = -10 V 2. I D = -5.75 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature -I D, Drain Current [A] 10 2 10 1 Operation in This Area is Limited by R DS(on) DC 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 ms 1 ms 10 1 10 2 -, Drain-Source Voltage [V] 100 µs -I D, Drain Current [A] 12 10 8 6 4 2 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 1.04 /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, S quare W ave P ulse D uration [sec] Figure 11. Transient Thermal Response Curve
12V 200nF 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT -10V Q gs Q g Q gd -3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L t on t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS -------------------- BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS Rev. A1, Oct 20008
Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD L Driver R G Compliment of DUT (N-Channel) dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current V SD I RM di/dt I FM, Body Diode Forward Current Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
Mechanical Dimensions D 2 - PAK Dimensions in Millimeters
Mechanical Dimensions I 2 - PAK Dimensions in Millimeters
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