Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc Collector Current Continuous I C 300 madc Total Device Dissipation @ Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D 1.5 12 T J, T stg 55 to +150 mw mw/ C Watts mw/ C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 200 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W C 2 BASE COLLECTOR 3 1 EMITTER MARKING DIAGRAM MPS A44 DDD TO92 (TO226AA) CASE 2911 Style 1 MPSA44= Specific Device Cod DDD = Date Code ORDERING INFORMATION Device Package Shipping MPSA44 TO92 5000 Units / Bag MPSA44RLRA TO92 2000 / Tape & Reel MPSA44RL1 TO92 2000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 September, 2003 Rev. 2 1 Publication Order Number: MPSA44/D
ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = madc, I B = 0) CollectorEmitter Breakdown Voltage (I C = 0 µadc, V BE = 0) CollectorBase Breakdown Voltage (I C = 0 Adc, I E = 0) EmitterBase Breakdown Voltage (I E = Adc, I C = 0) Collector Cutoff Current (V CB = 400 Vdc, I E = 0) Collector Cutoff Current (V CE = 400 Vdc, V BE = 0) Emitter Cutoff Current (V EB = 4.0 Vdc, I C = 0) V (BR)CEO 400 Vdc V (BR)CES 500 Vdc V (BR)CBO 500 Vdc V (BR)EBO 6.0 Vdc I CBO 0.1 Adc I CES 500 nadc I EBO 0.1 Adc ON CHARACTERISTICS (Note 1) DC Current Gain (Note 1) (I C = madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = 50 madc, V CE = Vdc) (I C = 0 madc, V CE = Vdc) CollectorEmitter Saturation Voltage (Note 1) (I C = madc, I B = 0.1 madc) (I C = madc, I B = madc) (I C = 50 madc, I B = madc) BaseEmitter Saturation Voltage (I C = madc, I B = madc) h FE 40 50 45 40 V CE(sat) 200 0.4 0.75 Vdc V BE(sat) 0.75 Vdc SMALLSIGNAL CHARACTERISTICS Output Capacitance (V CB = 20 Vdc, I E = 0, f = MHz) Input Capacitance (V EB = Vdc, I C = 0, f = MHz) SmallSignal Current Gain (I C = madc, V CE = Vdc, f = 20 MHz) C obo 7.0 pf C ibo 130 pf h fe 1. Pulse Test: Pulse Width 300 s, Duty Cycle %. 2
hfe, DC CURRENT GAIN 160 140 120 0 80 60 40 T A = 125 C 25 C 55 C V CE = V VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 0.4 0.3 0.1 I C = ma I C = ma I C = 50 ma 20 20 50 0 200 300 0 30 0 300 k 3.0 k k 50 k I B, BASE CURRENT (µa) Figure 1. DC Current Gain Figure 2. Collector Saturation Region V, VOLTAGE (VOLTS) 0.8 V BE(sat) @ I C /I B = 0.6 V BE(on) @ V CE = V 0.4 V CE(sat) @ I C /I B = 0 0.1 0.3 3.0 30 0 300 Figure 3. On Voltages IC, COLLECTOR CURRENT (ma) 00 300 200 0 20 T C = 25 C ms s 0 µs CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE % MPSA44 20 50 0 200 500 V CE, COLLECTOR VOLTAGE (VOLTS) Figure 4. Active Region Safe Operating Area 0 C, CAPACITANCE (pf) 50 20 0.3 C ib C ob f = MHz 3.0 30 REVERSE BIAS (VOLTS) 0 300 hfe, SMALLSIGNAL CURRENT GAIN 3.0 1.5 V CE = V f = MHz 0.1 0.3 3.0 30 0 Figure 5. Capacitance Figure 6. High Frequency Current Gain 3
+9.7 V PW = 50 µs DUTY CYCLE = % t, TIME ( s) µ V CC = 150 V I C /I B = V BE(off) = 4.0 Vdc t d t r 0 4.0 V V CC R L 0.1 3.0 30 50 0 R B V out C S 4.0 pf* Figure 7. TurnOn Switching Times and Test Circuit +.7 V t, TIME ( s) µ V CC = 150 V I C /I B = t s t f 11.4 V V CC PW = 50 µs DUTY CYCLE = % R L 0.1 3.0 30 50 0 V out R B C S 4.0 pf* Figure 8. TurnOff Switching Times and Test Circuit *Total Shunt Capacitance or Test Jig and Connectors. 4
PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AL SEATING PLANE R A X X H V 1 N G P N B L K C D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 05 4.45 5.20 B 0.170 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 33 G 0.045 0.055 1.15 1.39 H 0.095 2.42 2.66 J 0.015 0.020 0.39 0 K 00 12.70 L 50 6.35 N 0.080 4 2.66 P 0.0 2.54 R 0.115 2.93 V 0.135 3.43 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5
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