<High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N CM24HCB-34N I C 8 A V CES 7 V -element in pack Insulated type CSTBT TM / Soft recovery diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Publication Date : December 25 (HVM-52-C)
< High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N MAXIMUM RATINGS Symbol Item Conditions Ratings Unit V CES Collector-emitter voltage V GE = V, T j = 25 C 7 V V GES Gate-emitter voltage V CE = V, T j = 25 C ± 2 V I C DC, T c = 8 C 8 A Collector current I CRM Pulse (Note ) 36 A I E (Note 2) DC 8 A Emitter current I ERM Pulse (Note ) 36 A (Note 3) P tot Maximum power dissipation T c = 25 C, IGBT part 38 W V iso Isolation voltage RMS, sinusoidal, f = 6Hz, t = min. 4 V T j Junction temperature 4 ~ +5 C T jop Operating temperature 4 ~ +25 C T stg Storage temperature 4 ~ +25 C t psc Maximum short circuit pulse width V CC =V, V CE V CES, V GE =5V, T j =25 C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions I CES Collector cutoff current V CE = V CES, V GE = V Limits Min Typ Max T j = 25 C 8 T j = 25 C 6. 6 V GE(th) Gate-emitter threshold voltage V CE = V, I C = 8 ma, T j = 25 C 5.5 6.5 7.5 V I GES Gate leakage current V GE = V GES, V CE = V, T j = 25 C -.5.5 µa C ies Input capacitance 352 nf V CE = V, V GE = V, f = khz C oes Output capacitance 9.2 nf T j = 25 C C res Reverse transfer capacitance 5.6 nf Q G Total gate charge V CC = 9 V, I C = 8 A, V GE = ±5 V 24.4 µc V CEsat Collector-emitter saturation voltage (Note 4) I C = 8 A V GE = 5 V T j = 25 C 2. 2.6 T j = 25 C 2.2 t d(on) Turn-on delay time V CC = 9 V, I C = 8 A.5 µs t r Turn-on rise time V GE = ±5 V, R G(on) =.9 Ω T j = 25 C, L s = 8 nh.6 µs (Note 5) E on(%) Turn-on switching energy Inductive load.56 J t d(off) Turn-off delay time V CC = 9 V, I C = 8 A 3. µs t f Turn-off fall time V GE = ±5 V, R G(off) =.3 Ω T j = 25 C, L s = 8 nh.6 µs (Note 5) E off(%) Turn-off switching energy Inductive load.5 J V EC Emitter-collector voltage (Note 2) (Note 4) I E = 8 A T j = 25 C 2. 2.9 V GE = V T j = 25 C.75 V t rr Q rr E rec(%) Reverse recovery time Reverse recovery charge Reverse recovery energy (Note 2) V CC = 9 V, I E = 8 A (Note 2) V GE = ±5 V, R G(on) =.9 Ω 7 µc (Note 2) T j = 25 C, L s = 8 nh (Note 5) Inductive load.44 J Unit ma V.5 µs THERMAL CHARACTERISTICS Limits Symbol Item Conditions Unit Min Typ Max R th(j-c)q Junction to Case, IGBT part 9. K/kW Thermal resistance R th(j-c)d Junction to Case, FWDi part 3. K/kW R th(c-s) Contact thermal resistance Case to heat sink, grease = W/m k, D (c-s) = m 7. K/kW Publication Date : December 25 2
< High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit M t M8 : Main terminals screw 7. 3. N m M s Mounting torque M6 : Mounting screw 3. 6. N m M t M4 : Auxiliary terminals screw. 2. N m m Mass.5 kg CTI Comparative tracking index 6 d a Clearance 9.5 mm d s Creepage distance 32. mm L P CE Parasitic stray inductance. nh R CC +EE Internal lead resistance T C = 25 C.8 mω Note. Pulse width and repetition rate should be such that junction temperature (T j) does not exceed T jopmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD i). 3. Junction temperature (T j) should not exceed T jmax rating (5 C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(%) / E off(%) / E rec(%) are the integral of.v CE x.i C x dt. Publication Date : December 25 3
Emitter Current [A] < High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 36 Tj = 25 C 36 VCE = 2V 3 V GE = 2V 3 24 V GE = 5V V GE = 2V V GE = V 24 Tj = 25 C Tj = 25 C 8 8 2 V GE = 8V 2 6 6 2 3 4 5 6 Collector - Emitter Voltage [V] 2 4 6 8 2 Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE 36 VGE = 5V FREE-WHEEL DIODE FORWARD 36 3 3 24 Tj = 25 C Tj = 25 C 24 Tj = 25 C Tj = 25 C 8 8 2 2 6 6 2 3 4 Collector-Emitter Saturation Voltage [V] 2 3 4 Emitter-Collector Voltage [V] Publication Date : December 25 4
Switching Energies [J/P] Switching Energies [J/P] Capacitance [nf] Gate-Emitter Voltage [V] < High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 2 5 VCE = 9V, IC = 8A Tj = 25 C Cies 5 Coes -5 VGE = V, Tj = 25 C f = khz Cres -. Collector-Emitter Voltage [V] -5 2 3 4 Gate Charge [µc] HALF-BRIDGE SWITCHING ENERGY 2.5 2 VCC = 9V, VGE = ±5V RG(on) =.9 Ω, R G(off) =.3 Ω Tj = 25 C, Inductive load HALF-BRIDGE SWITCHING ENERGY 3. 2.5 VCC = 9V, IC = 8A VGE = ±5V, Tj = 25 C Inductive load Eon Eon.5 2..5 Eoff. Eoff.5 Erec.5 Erec 6 2 8 24 3 36. 2 3 4 5 6 Gate Resistance [Ω] Publication Date : December 25 5
Normalized Transient Thermal impedance Switching Times [µs] Reverse Recovery Time [µs] Reverse Recovery Current [A] < High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY FREE-WHEEL DIODE REVERSE RECOVERY td(off) VCC = 9V, VGE = ±5V R G(on) =.9 Ω, R G(off) =.3 Ω Tj = 25 C, Inductive load V CC = 9V, V GE = ±5V R G(on) =.9 Ω Tj = 25 C, Inductive load Irr td(on) tf trr. tr. Emitter Current [A] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS.2 Rth(j-c)Q = 9. K/kW Rth(j-c)R = 3. K/kW.8.6.4 Z th( jc ) n t ( t ) R exp i i i.2... Time [s] Publication Date : December 25 6
Reverse Recovery Current [A] < High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 5 4 VCC 2V, VGE = ±5V Tj = 25 C, RG(off).3 Ω SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 3 25 V CC V, V GE = ±5V R G(on).9Ω, R G(off).3Ω Tj = 25 C, tpsc µs 3 2 5 2 5 5 5 2 5 5 2 Collector-Emitter Voltage [V] Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 25 VCC 2V, di/dt 8A/µs Tj = 25 C 2 5 5 5 5 2 Collector-Emitter Voltage [V] Publication Date : December 25 7
< High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishielectric.com/). When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 24 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : December 25 8