INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @36V V CE (start), T J = 25 C, V GE = 5V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC3KD2 and IRGBC3MD2 products For hints see design tip 973 Absolute Maximum Ratings IRG4PC3KDPbF Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 28 I C @ T C = C Continuous Collector Current 6 I CM Pulsed Collector Current 58 A I LM Clamped Inductive Load Current 58 I F @ T C = C Diode Continuous Forward Current 2 I FM Diode Maximum Forward Current 58 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P D @ T C = 25 C Maximum Power Dissipation P D @ T C = C Maximum Power Dissipation 42 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.2 R θjc Junction-to-Case - Diode 2.5 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) www.irf.com 7/26/4 G C E n-channel TO-247AC PD -95557 Short Circuit Rated UltraFast IGBT V CES = 6V V CE(on) typ. = 2.2V @V GE = 5V, I C = 6A
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 6 V V GE = V, I C = 25µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.54 V/ C V GE = V, I C =.ma V CE(on) Collector-to-Emitter Saturation Voltage 2.2 2.7 I C = 6A V GE = 5V 2.88 V I C = 28A See Fig. 2, 5 2.36 I C = 6A, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, I C = 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -2 mv/ C V CE = V GE, I C = 25µA g fe Forward Transconductance 5.4 8. S V CE = V, I C = 6A I CES Zero Gate Voltage Collector Current 25 µav GE = V, V CE = 6V 25 V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop.4.7 V I C = 2A See Fig. 3.3.6 I C = 2A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± nav GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 67 I C = 6A Q ge Gate - Emitter Charge (turn-on) 6 nc V CC = 4V See Fig.8 Q gc Gate - Collector Charge (turn-on) 25 37 V GE = 5V t d(on) Turn-On Delay Time 6 t r Rise Time 42 T J = 25 C ns t d(off) Turn-Off Delay Time 6 25 I C = 6A, V CC = 48V t f Fall Time 8 2 V GE = 5V, R G = 23Ω E on Turn-On Switching Loss.6 Energy losses include "tail" E off Turn-Off Switching Loss.58 mj and diode reverse recovery E ts Total Switching Loss.8.6 See Fig. 9,,4 t sc Short Circuit Withstand Time µs V CC = 36V, T J = 25 C V GE = 5V, R G = Ω, V CPK < 5V t d(on) Turn-On Delay Time 58 T J = 5 C, See Fig.,4 t r Rise Time 42 I C = 6A, V CC = 48V ns t d(off) Turn-Off Delay Time 2 V GE = 5V, R G = 23Ω, t f Fall Time 6 Energy losses include "tail" E ts Total Switching Loss.69 mj and diode reverse recovery L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 92 V GE = V C oes Output Capacitance pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 27 ƒ =.MHz t rr Diode Reverse Recovery Time 42 6 ns T J = 25 C See Fig. 8 2 T J = 25 C 4 I F = 2A I rr Diode Peak Reverse Recovery Current 3.5 6. AT J = 25 C See Fig. 5.6 T J = 25 C 5 V R = 2V Q rr Diode Reverse Recovery Charge 8 8 nc T J = 25 C See Fig. 22 6 T J = 25 C 6 di/dt = 2Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 8 A/µs T J = 25 C See Fig. During t b 6 T J = 25 C 7 2 www.irf.com
8 LOAD CURRENT (A) 6 4 2 8 6 4 Square wave: 6% of rated voltage I Ideal diodes For both: Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 24 W 2. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T = 25 o J C T = 5 o J C V GE = 5V 2µs PULSE WIDTH. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) o T J = 5 C T = 25 o J C V CC = 5V 5µs PULSE WIDTH. 5 5 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 3 25 2 5 5 V CE, Collector-to-Emitter Voltage(V) 4. 3. 2. V GE = 5V 8 us PULSE WIDTH I C = I C = I C = 32 A 6 A 8.A 8 A 25 5 75 25 5 T C, Case Temperature ( C). -6-4 -2 2 4 6 8 2 4 6 TT J, ( J, Junction Temperature ( C C) ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ). D =.5.2..5.2 t2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2. 2. Peak T J = PDM x Z thjc + TC..... t, Rectangular Pulse Duration (sec) PDM t Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 5 2 9 6 3 VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V CC = 4V I C = 6A C res V CE, Collector-to-Emitter Voltage (V) 2 4 6 8 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj).5.4.3.2. V CC = 48V V GE = 5V T = 25 J C I C = 6A Total Switching Losses (mj) R G = Ohm 23Ω V GE = 5V V CC = 48V I C = 32A I C = I C = 6A 8.A 8A. 2 3 4 5 R R G G,, Gate Resistance ((Ohm) Ω ). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 5. 4. 3. 2.. R G = 23Ω Ohm T J = 5 C V CC = 48V V GE = 5V. 8 6 24 32 4 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) V GE = 2V T J = 25 C oc SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 5 C T J = 25 C T J = 25 C.4.8.2.6 2. 2.4 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
6 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C 2 t rr - (ns) 8 I F = 24A I F = 2A I = 6.A F I IRRM - (A) I F = 6.A I F = 2A I = 24A F 4 di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 6 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C Q RR - (nc) 4 2 I F = 2A I F = 24A di(rec)m/dt - (A/µs) I F = 6.A I F = 2A I F = 6.A I F = 24A di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. +Vge 9% Vge Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µs Eoff = Vce ic Ic dt dt t t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 48V R L = 48V 4 X I C @25 C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit www.irf.com 9
Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 23Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 35H 56 57 PART NUMBER DATE CODE YEAR = 2 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information.7/4 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/