KSC2383 NPN Epitaxial Silicon Transistor TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 6 V I C Collector Current A Base Current 0.5 A T J Junction Temperature 50 C T STG Storage Temperature -55 to +50 C 2002 Semiconductor Components Industries, LLC. October-207,Rev.2 Publication Order Number: KSC2383/D
Thermal Characteristics () Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit Power Dissipation 900 mw P D Derate Above 25 C 7.2 mw/ C R θja Thermal Resistance, Junction-to-Ambient 38 C/W Note:. PCB size: FR-4, 76 mm x 4 mm x.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at T A = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit I CBO Collector Cut-Off Current V CB = 50 V, I E = 0 μa I EBO Emitter Cut-Off Current V EB = 6 V, I C = 0 μa BV CEO Collector-Emitter Breakdown Voltage I C = 0 ma, = 0 60 V h FE DC Current Gain V CE = 5 V, I C = 200 ma 60 320 V CE (sat) Collector-Emitter Saturation Voltage I C = 500 ma, = 50 ma.5 V V BE (on) Base-Emitter On Voltage V CE = 5 V, I C = 5 ma 0.45 0.75 V f T Current Gain Bandwidth Product V CE = 5 V, I C = 200 ma 20 00 MHz V C ob Output Capacitance CB = 0 V, I E = 0, f = MHz 20 pf h FE Classification Classification R O Y h FE 60 ~ 20 00 ~ 200 60 ~ 320 2
Typical Performance Characteristics Ic[mA], COLLECTOR CURRENT.4.2.0 0.8 0.6 0.4 0.2 = 5mA T a =25 o C = 0mA = 6mA = 4mA = 3mA = 2.5mA = 2mA =.5mA = ma = 0.5mA 0.0 0.0 0.2 0.4 0.6 0.8.0.2.4 V CE [V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic hfe, DC CURRENT GAIN 000 00 0 VCE=5V 0 00 000 Figure 2. DC Current Gain VCE=0V hfe, DC CURRENT GAIN 000 00 0 VCE=0V VCE=5V VCE=V 00 000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0. 0.0 IC/IB=0 IC/IB=5 E-3 0 00 000 Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage IC[A], COLLECTOR CURRENT.0 0.8 0.6 0.4 0.2 IC/IB=0 Cob[pF], CAPACITANCE 000 00 0 f = MHz 0.0 0.0 0.2 0.4 0.6 0.8.0 VBE[V], BASE-EMITTER VOLTAGE 0 00 000 VCB[V], COLLECTOR BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance 3
Typical Performance Characteristics (Continued) ft[mhz], CURRENT GAIN BANDWIDTH PRODUCT 000 00 0 0 00 000 Figure 7. Current Gain Bandwidth Product IC[A], COLLECTOR CURRENT 0 0. 0.0 IC MAX. (Pulse) IC MAX.=A 00ms 0ms DC Ta=25 o C E-3 0 00 000 Figure 8. Safe Operating Area ms VCE[V], COLLECTOR-EMITTER VOLTAGE VCEO MAX. 4
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