STPS3L6 Power Schottky rectifier Features Negligible switching losses Low forward voltage drop valanche capability specified Description xial and surface mount power Schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. Packaged in DO-2D, DO-5, SMB and SMBflat, this device is intended for use in low voltage, high frequency inverters and small battery chargers and for applications where there are space constraints, for example telecom battery charger. K DO-2D STPS3L6 K SMB STPS3L6U K K DO-5 STPS3L6Q SMBflat STPS3L6UF Table. Device summary I F(V) 3 V RRM 6 V T j (max) 5 C V F (max).6 V June 29 Doc ID 755 Rev 6 / www.st.com
Characteristics STPS3L6 Characteristics Table 2. bsolute ratings () Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I F(RMS) RMS forward current I F(V) verage forward current T L = 5 C δ =.5 (DO-2D, SMB) T L = 72 C δ =.5 (DO-5) T L = 27 C δ =.5 (SMBflat). limiting values, per diode 2. dptot --------------- condition to avoid thermal runaway for a diode on its own heatsink dtj Rth ( j a) Table 3. Thermal resistance 3 I FSM Surge non repetitive forward current t p = ms Sinusoidal P RM Repetitive peak avalanche power t p = µs T j = 25 C 2 W T stg Storage temperature range -65 to + 5 C T j Maximum operating junction temperature (2) 5 C dv/dt Critical rate of rise reverse voltage V/µs Symbol Parameter Value Unit SMBflat R th (j-l) Junction to leads Lead length = mm SMB 2 DO-2D 2 DO-5 35 C/W 2/ Doc ID 755 Rev 6
STPS3L6 Characteristics Table 4. Static electrical characteristics Symbol Parameter Tests Conditions Min. Typ. Max. Unit T j = 25 C - - 5 µ I R () Reverse leakage current T j = C V R = V RRM - 4 5 m T j = 25 C - 4 3 T j = 25 C - -.62 T j = C I F = 3 -.53.6 V F () Forward voltage drop T j = 25 C -.5.59 T j = 25 C - -.79 V T j = C I F = 6 -.62.7 T j = 25 C -.6.69. Pulse test :t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation : P =.44 x I F(V) +.5 x I F 2 (RMS) Figure. P F(V) (W) 2.5 2.25 2..75 verage forward power dissipation versus average forward current δ =.5 δ =. δ =.2 δ =.5 δ = Figure 2. I F(V) () 3.5 3. 2.5 verage forward current versus ambient temperature (δ =.5) (DO-2D, SMB) R th(j-a) =Rth(j-I).5.25..75.5 T.25 I F(V) () δ=tp/t tp...5..5 2. 2.5 3. 3.5 4. 2..5..5. R th(j-a) =8 C/W T amb( C) 25 5 75 25 5 Doc ID 755 Rev 6 3/
Characteristics STPS3L6 Figure 3. verage forward current versus ambient temperature (δ =.5) (DO-5) Figure 4. verage forward current versus ambient temperature (δ =.5) (SMBflat) I F(V) () 3.5 I F(V) () 3.5 3. Rth(j-a)=Rth(j-l) 3. Rth(j-a)=Rth(j-l) 2.5 2.5 2. 2..5 Rth(j-a)= C/W.5.. Rth(j-a)= C/W.5 T amb( C). 25 5 75 25 5.5 T amb( C). 25 5 75 25 5 Figure 5. Normalized avalanche power derating versus pulse duration Figure 6. Normalized avalanche power derating versus junction temperature P RM(tp) P RM( µs).2 P RM(Tj) P RM(25 C)..8.6..4... t (µs) p.2 T ( C) j 25 5 75 25 5 Figure 7. Non repetitive surge peak forward current versus overload duration (maximum values) (DO-2D) Figure 8. Non repetitive surge peak forward current versus overload duration (maximum values) (DO-5) 2 8 6 4 2 I () M IM t δ =.5 t(s) Ta=25 C Ta=5 C Ta= C.E-3.E-2.E-.E+ 9 8 7 6 5 4 3 2 I () M IM t δ =.5 t(s) Ta=25 C Ta=5 C Ta= C.E-3.E-2.E-.E+ 4/ Doc ID 755 Rev 6
STPS3L6 Characteristics Figure 9. Non repetitive surge peak forward current versus overload duration (maximum values) (SMB) Figure. Non repetitive surge peak forward current versus overload duration (maximum values) (SMBflat) 9 8 7 6 5 4 3 2 I () M IM t δ =.5 t(s) Ta=25 C Ta=5 C Ta= C.E-3.E-2.E-.E+ 4 35 3 25 2 5 5 I () M IM t δ =.5 t(s) T L =25 C T L =5 C T L = C.E-3.E-2.E-.E+ Figure. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-2D) Figure 2. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-5). Z th(j-a) /Rth(j-a). Z th(j-a) /Rth(j-a).9.9.8.8.7.7.6.6.5.5.4.4.3.3.2.2.. Single pulse t (s) p.e-.e+.e+.e+2.e+3.. Single pulse t (s) p.e-.e+.e+.e+2.e+3 Figure 3. Relative variation of thermal impedance junction to ambient versus pulse duration (SMB) Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration (SMBflat). Z th(j-a) /Rth(j-a). Z th(j-l) /Rth(j-l).9.9.8.8.7.7.6.6.5.5.4.4.3.3.2.. Single pulse t (s) p.e-.e+.e+.e+2.e+3.2.. Single pulse t (s) p.e-3.e-2.e-.e+ Doc ID 755 Rev 6 5/
Characteristics STPS3L6 Figure 5. Reverse leakage current versus reverse voltage applied (typical values) Figure 6. Junction capacitance versus reverse voltage applied (typical values).e+2 I (m) R C(pF).E+ Tj=25 C F=MHz Vosc=3mV Tj=25 C Tj= C.E+.E-.E-2.E-3 Tj=25 C V (V) R 5 5 2 25 3 35 4 45 5 55 6 V (V) R Figure 7. Forward voltage drop versus forward current (high level) Figure 8. Forward voltage drop versus forward current (low level) 3 I FM() 5 I FM() 25 Tj= C (Typical values) 4 Tj= C (Typical values) 2 5 Tj= C (Maximum values) Tj=25 C (Maximum values) 3 Tj= C (Maximum values) 5 V FM(V)..2.4.6.8..2.4.6.8 2. 2.2 2.4 2 Tj=25 C (Maximum values) V FM(V)...2.3.4.5.6.7.8.9. Figure 9. 2 R th(j-a) ( C/W) Thermal resistance junction to ambient versus copper surface under each lead (SMB) Expoxy printed circuit FR4, copper thickness = 35 µm SMB Figure 2. 2 R th(j-a) ( C/W) Thermal resistance junction to ambient versus copper surface under each lead (SMBflat) Expoxy printed circuit FR4, copper thickness = 35 µm SMB-Flat 8 8 6 6 4 4 2 S(Cu)(cm²)..5..5 2. 2.5 3. 3.5 4. 4.5 5. 2 S(Cu)(cm²)..5..5 2. 2.5 3. 3.5 4. 4.5 5. 6/ Doc ID 755 Rev 6
STPS3L6 Package information 2 Package information Epoxy meets UL94,V In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: www.st.com. ECOPCK is an ST trademark. Figure 2. DO-5 plastic dimensions Dimensions C C Ref. Millimeters Inches D B Min. Max. Min. Max. 6.5 6.75.238.266 B 2.95 3.53.6.39 C 26 3.24.22 D.7.88.28.35 Figure 22. DO-2D plastic dimensions Dimensions B B Ref. Millimeters Inches Note E E Note Min. Max. Min. Max. ØD Note 2 9.5.374 ØC B 25.4. C 5.3.29 D.3.5 E.25.49 Notes:. The lead diameter D is not controlled over zone E 2. The minimum axial length within which the device may be placed with its leads bent at right angles is.59 (5 mm) Doc ID 755 Rev 6 7/
Package information STPS3L6 Table 5. SMB dimensions Dimensions Ref. Millimeters Inches E Min. Max. Min. Max..9 2.45.75.96 D 2.5.2.2.8 b.95 2.2.77.87 E c.5.4.6.6 D 3.3 3.95.3.56 E 5. 5.6.2.22 C L 2 b E 4.5 4.6.59.8 L.75.5.3.59 Figure 23. SMB footprint, dimensions in mm (inches).62 2.6 (.64) (.2).62 (.64) 2.8 (.86) 5.84 (.3) 8/ Doc ID 755 Rev 6
STPS3L6 Package information Table 6. SMBflat dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. D c.9..35.43 b.95 2.2.77.87 E E L 2x L 2x c.5.4.6.6 D 3.3 3.95.3.56 b L L2 2x E 5. 5.6.2.22 E 4.5 4.6.89.8 L.75.5.29.59 L.4.6 L2.6.24 Figure 24. SMBflat footprint dimensions (a) 5.84 (.23) 2.7 (.82).2 (.47) 3.44 (.36).2 (.47) millimeters (inches) a. SMB footprint may also be used. Doc ID 755 Rev 6 9/
Ordering information STPS3L6 3 Ordering information Table 7. Ordering information Order codes Marking Package Weight Base qty Delivery mode STPS3L6 STPS3L6 DO-2D.2 g 6 mmopack STPS3L6RL STPS3L6 DO-2D.2 g 9 Tape and reel STPS3L6Q STPS3L6 DO-5.4 g mmopack STPS3L6QRL STPS3L6 DO-5.4 g 6 Tape and reel STPS3L6U G36 SMB.7 g 25 Tape and reel STPS3L6UF FG36 SMBflat.36 g 5 Tape and reel 4 Revision history Table 8. Document revision history Date Revision Changes July-23 5 Previous issue 2-Jun-29 6 Reformatted to current standards. dded SMBflat package. dded ECOPCK statement. dded cathode band graphics. / Doc ID 755 Rev 6
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