INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing Absolute Maximum Ratings IRG4PH4UDPbF G C E n-channel PD- 9588A UltraFast CoPack IGBT TO-247AC V CES = 2V V CE(on) typ. = 2.43V @V GE = 5V, I C = 2A Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 2 V I C @ T C = 25 C Continuous Collector Current 4 I C @ T C = C Continuous Collector Current 2 I CM Pulsed Collector Current 82 I LM Clamped Inductive Load Current 82 A I F @ T C = C Diode Continuous Forward Current 8. I FM Diode Maximum Forward Current 3 V GE Gate-to-Emitter Voltage ± 2 V P D @ T C = 25 C Maximum Power Dissipation 6 P D @ T C = C Maximum Power Dissipation 65 W T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Soldering Temperature, for seconds 3 (.63 in. (.6mm) from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.77 R θjc Junction-to-Case - Diode.7 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) www.irf.com 5/27/
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 2 V V GE = V, I C = 25µA ΔV (BR)CES/ΔT J Temperature Coeff. of Breakdown Voltage.43 V/ C V GE = V, I C =.ma V CE(on) Collector-to-Emitter Saturation Voltage 2.43 3. I C = 2A V GE = 5V 2.97 V I C = 4A See Fig. 2, 5 2.47 I C = 2A, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, I C = 25µA ΔV GE(th) /ΔT J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 25µA g fe Forward Transconductance 6 24 S V CE = V, I C = 2A I CES Zero Gate Voltage Collector Current 25 µa V GE = V, V CE = 2V 5 V GE = V, V CE = 2V, T J = 5 C V FM Diode Forward Voltage Drop 2.6 3.3 V I C = 8.A See Fig. 3 2.4 3. I C = 8.A, T J = 25 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 86 3 I C = 2A Qge Gate - Emitter Charge (turn-on) 3 2 nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) 29 44 V GE = 5V t d(on) Turn-On Delay Time 46 T J = 25 C t r Rise Time 35 ns I C = 2A, V CC = 8V t d(off) Turn-Off Delay Time 97 5 V GE = 5V, R G = Ω t f Fall Time 24 36 Energy losses include "tail" and E on Turn-On Switching Loss.8 diode reverse recovery. E off Turn-Off Switching Loss.93 mj See Fig. 9,, 8 E ts Total Switching Loss 3.73 4.6 t d(on) Turn-On Delay Time 42 T J = 5 C, See Fig., 8 t r Rise Time 32 ns I C = 2A, V CC = 8V t d(off) Turn-Off Delay Time 24 V GE = 5V, R G = Ω t f Fall Time 5 Energy losses include "tail" and E ts Total Switching Loss 7.4 mj diode reverse recovery. L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 8 V GE = V C oes Output Capacitance 2 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 8 ƒ =.MHz t rr Diode Reverse Recovery Time 63 95 ns T J = 25 C See Fig. 6 6 T J = 25 C 4 I F = 8.A I rr Diode Peak Reverse Recovery Current 4.5 8. A T J = 25 C See Fig. 6.2 T J = 25 C 5 V R = 2V Q rr Diode Reverse Recovery Charge 4 38 nc T J = 25 C See Fig. 335 88 T J = 25 C 6 di/dt = 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 33 A/µsT J = 25 C See Fig. During t b 85 T J = 25 C 7 2 www.irf.com
25 For both: LOAD CURRENT (A) 2 5 Square wave: 6% of rated voltage I Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 35 W 5 Ideal diodes. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T = 5 o J C o T J = 25 C V GE = 5V 2μs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 5 o J C T = 25 o J C V CC = 5V 5μs PULSE WIDTH 5 6 7 8 9 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 5 4 3 2 V CE, Collector-to-Emitter Voltage(V) 4. 3. 2. V GE = 5V 8 us PULSE WIDTH I C = I C = 42 A 2 A I C =.5 A 25 5 75 25 5 T C, Case Temperature ( C). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ). D =.5.2..5 PDM t.2 SINGLE PULSE t2. (THERMAL RESPONSE) Notes:. Duty factor D = t / t2. 2. Peak T J= PDM x Z thjc + TC..... t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 4 3 2 VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V CC = 4V I C = 2A V CE, Collector-to-Emitter Voltage (V) 2 4 6 8 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 5. 4.5 4. 3.5 V CC = 8V V GE = 5V T = 25 J C I C = 2A Total Switching Losses (mj) R G = Ω Ohm V GE = 5V V CC = 8V I C = I C = 42A 2A I C =.5A 3. 2 3 4 5 R GR G,, Gate Resistance ((Ohm) Ω ) -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 6 2 8 4 R G = Ohm Ω T J = 5 C V CC = 8V V GE = 5V 2 3 4 5 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) V GE = 2V o T J = 25 C SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 5 C T J = 25 C T J = 25 C 2 4 6 8 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
2 6 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C t rr - (ns) 2 8 I F = 6A I F = 8.A I = 4.A F I IRRM - (A) I = 4.A F I F = 6A I F = 8.A 4 di f /dt - (A/μs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/μs) Fig. 5 - Typical Recovery Current vs. di f /dt 6 5 V R = 2V T J = 25 C T J = 25 C I = 4.A F Q RR - (nc) 4 3 2 I F = 6A I F = 8.A I F = 4.A di(rec)m/dt - (A/μs) I F= 8.A I F = 6A V R = 2V T J = 25 C T J = 25 C di f /dt - (A/μs) Fig. 6 - Typical Stored Charge vs. di f /dt di f /dt - (A/μs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. +Vge Vce 9% Vge 8% of Vce 43μF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5μs Eoff = Vce ic Ic dt dt t t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 8V R L = 8V 4 X I C @25 C 5V 6μF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit www.irf.com 9
Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=μH, R G = Ω (figure 9) ƒpulse width 8μs; duty factor.%. Pulse width 5.μs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WITH AS S E MB LY LOT CODE 5657 ASSEMBLED ON WW 35, 2 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 35H 56 57 PART NUMBER DATE CODE YEAR = 2 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N.Sepulveda Blvd, El Segundo, California 9245, USA Tel: (3) 252-75 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. 5/2 www.irf.com
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