SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage VCE(sat) =. Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 6 Vdc Collector Emitter Voltage VCER 7 Vdc Collector Base Voltage VCB Vdc Emitter Base Voltage VEB Î Î Î 7 Vdc Collector Current Continuous Î IC 5 Adc Base Current Î IB 7 Adc Î Total Power Dissipation @ TC = 25 C Î PD Î 5 Watts Derate above 25 C.657 W/ C Operating and Storage Junction Temperature TJ, Tstg 65 to + C Range *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 6 VOLTS 5 WATTS CASE 7 TO 4AA (TO 3) THERMAL CHARACTERISTICS Î Characteristic Î Thermal Resistance, Junction to Case Î Symbol Î Max Unit Î RθJC Î.52 C/W 6 PD, POWER DISSIPATION (WATTS) 4 8 6 4 25 5 75 25 5 75 TC, CASE TEMPERATURE ( C) Figure. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit *OFF CHARACTERISTICS Collector Emitter Sustaining Voltage () VCEO(sus) (IC = madc, IB = ) ÎÎ 6 Vdc ÎÎ ÎÎ Collector Emitter Sustaining Voltage () VCER(sus) (IC = madc, RBE = Ohms) 7 Vdc ÎÎ ÎÎ Collector Cutoff Current ICEO.7 madc (VCE = 3 Vdc, IB = ) ÎÎ Collector Cutoff Current ICEX madc ÎÎ (VCE = Vdc, VBE(off) =.5 Vdc). ÎÎ (VCE = Vdc, VBE(off) =.5 Vdc, TC = 5 C) 5. ÎÎ Emitter Cutoff Current IEBO (VBE = 7. Vdc, IC = ) 5. madc ÎÎ *ON CHARACTERISTICS () ÎÎ DC Current Gain hfe ÎÎ (IC = 4. Adc, VCE = 4. Vdc) 7 (IC = Adc, VCE = 4. Vdc) 5. Collector Emitter Saturation Voltage VCE(sat) Vdc (IC = 4. Adc, IB = 4 madc) ÎÎ. ÎÎ (IC = Adc, IB = 3.3 Adc) 3. ÎÎ Base Emitter On Voltage VBE(on).5 Vdc (IC = 4. Adc, VCE = 4. Vdc) ÎÎ SECOND BREAKDOWN ÎÎ Second Breakdown Collector Current with Base Forward Biased Is/b 2.87 (VCE = 4 Vdc, t =. s, Nonrepetitive) Adc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ft 2.5 MHz ÎÎ (IC =.5 Adc, VCE = Vdc, f =. MHz) *Small Signal Current Gain hfe 5 (IC =. Adc, VCE = 4. Vdc, f =. khz) ÎÎ ÎÎ *Small Signal Current Gain Cutoff Frequency fhfe khz (VCE = 4. Vdc, IC =. Adc, f =. khz) ÎÎ * Indicates Within JEDEC Registration. (2N355) () Pulse Test: Pulse Width 3 µs, Duty Cycle 2.%. 6 4 2.6.2 6 2N355, MJ2955 dc 5 µs ms 25 µs 4 6 5 µs BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25 C (SINGLE PULSE) SECOND BREAKDOWN LIMIT Figure 2. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25 C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated for temperature according to Figure. 2 Motorola Bipolar Power Transistor Device Data
hfe, DC CURRENT GAIN 5 3 7 5 3 7. 5.. TJ = 5 C 25 C 55 C NPN 2N355 VCE = 4. V hfe, DC CURRENT GAIN 7 5 3 Figure 3. DC Current Gain PNP MJ2955 TJ = 5 C.2.3.5.7. 2. 3. 5. 7...2.3.5.7. 2. 3. 5. 7. 25 C 55 C VCE = 4. V 2..6.8 5. IC =. A 4. A 8. A 5 5 5 2..6 IC =. A 4. A 8. A.8 5. 5 5 5 IB, BASE CURRENT (ma) IB, BASE CURRENT (ma) Figure 4. Collector Saturation Region V, VOLTAGE (VOLTS).4..8 VBE(sat) @ IC/IB =.6 VBE @ VCE = 4. V.2 VCE(sat) @ IC/IB =..2.3.5.7. 2. 3. 5. 7. 2..6 VBE(sat) @ IC/IB = VBE @ VCE = 4. V.8 VCE(sat) @ IC/IB =..2.3.5. 2. 3. 5. IC, COLLECTOR CURRENT (AMPERES) Figure 5. On Voltages V, VOLTAGE (VOLTS) Motorola Bipolar Power Transistor Device Data 3
PACKAGE DIMENSIONS V H E 2 A N U Q C T SEATING PLANE D 2 PL K.3 (.5) M T Q M Y M L G Y.3 (.5) M T B Y M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO 4AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.55 REF 39.37 REF B.5 26.67 C.25.335 6.35 8.5 D.38.43.97.9 E.55.7.4.77 G 3 BSC.92 BSC H.25 BSC 5.46 BSC K 4 8.8 2.9 L.665 BSC 6.89 BSC N.83 2.8 Q.5.65 3.84 4.9 U.87 BSC 3.5 BSC V.3.88 3.33 4.77 STYLE : PIN. BASE 2. EMITTER CASE: COLLECTOR CASE 7 TO 4AA (TO 3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 92; Phoenix, Arizona 8536. 8 44 2447 6F Seibu Butsuryu Center, 3 4 2 Tatsumi Koto Ku, Tokyo 35, Japan. 3 352 835 MFAX: RMFAX@email.sps.mot.com TOUCHTONE (62) 244 669 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://design NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong. 852 26629298 4 Motorola Bipolar Power Transistor Device Data 2N355/D
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.