N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220 1 2 3 Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1. Internal schematic diagram Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Table 1. Device summary Order code Marking Package Packing STP110N7F6 110N7F6 TO-220 Tube October 2016 DocID026836 Rev 3 1/13 This is information on a product in full production. www.st.com
Contents STP110N7F6 Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)................................ 6 3 Test circuits.............................................. 8 4 Package information......................................... 9 4.1 TO-220 package information.................................. 10 5 Revision history........................................... 12 2/13 DocID026836 Rev 3
Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 68 V V GS Gate- source voltage ±20 V I D Drain current (continuous) at T C = 100 C 80 A Drain current (continuous) at T C = 25 C 110 A (1) I DM Drain current (pulsed) T C = 25 C 440 A P TOT Total dissipation at T C = 25 C 176 W E (2) AS Single pulse avalanche energy 185 mj T J Operating junction temperature range C -55 to 175 T stg Storage temperature range C 1. Pulse width is limited by safe operating area 2. Starting T J = 25 C, I D = 35 A, V DD = 50 V Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max. 0.85 C/W R thj-amb Thermal resistance junction-ambient max. 62.5 C/W DocID026836 Rev 3 3/13 13
Electrical characteristics STP110N7F6 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On/off-states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current 1. Defined by design, not subject to production test. V GS = 0, I D = 1 ma 68 V V GS = 0, V DS = 68 V 1 µa V GS = 0, V DS = 68 V, T C = 125 C (1) 100 µa I GSS Gate-body leakage current V DS = 0, V GS = +20 V 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 2 4 V R DS(on) Static drain-source onresistance V GS = 10 V, I D = 55 A 0.0055 0.0065 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 5850 pf C oss Output capacitance V DS = 25 V, f = 1 MHz, 340 pf C rss V GS = 0 Reverse transfer 240 capacitance - - pf Q g Total gate charge V DD = 34 V, I D = 110 A, 100 nc Q gs Gate-source charge V GS = 10 V 32 nc Q gd Gate-drain charge (see Figure 14) 19 nc Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time 23 ns V DD = 34 V, I D = 55 A, t r Rise time 29 ns R G = 4.7 Ω, V GS = 10 V - - t d(off) Turn-off delay time 103 ns (see Figure 13) t f Fall time 23 ns 4/13 DocID026836 Rev 3
Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit (1) V SD Forward on voltage I SD = 110 A, V GS = 0 1.2 V t rr Reverse recovery time 31 ns I SD = 110 A, di/dt = 100 A/µs - Q rr Reverse recovery charge 39 nc V DD = 54 V, (see Figure 15) I RRM Reverse recovery current 2.6 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026836 Rev 3 5/13 13
Electrical characteristics STP110N7F6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Normalized thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage VGS AM15423v1 (V) VDD=34V 12 ID=110A 10 8 6 4 2 Figure 7. Static drain-source on-resistance 0 0 20 40 60 80 100 Qg(nC) 6/13 DocID026836 Rev 3
Electrical characteristics Figure 8. Capacitance variations AM15425v1 C (pf) 7000 6000 Ciss 5000 4000 3000 2000 1000 Coss 0 Crss 0 20 40 60 VDS(V) Figure 9. Normalized V (BR)DSS vs temperature AM15428v1 V(BR)DSS (norm) 1.1 ID = 1mA 1.05 1 0.95 0.9 0.85 0.8-75 -50-25 0 25 50 75 100125150 TJ( C) Figure 10. Normalized gate threshold voltage vs temperature VGS(th) AM15426v1 (norm) 1.2 ID=250 µa 1 0.8 0.6 0.4 0.2 Figure 11. Normalized on-resistance vs temperature RDS(on) (norm) 2 1.5 1 0.5 VGS=10V AM15424v1 0-75 -50-25 0 25 50 75 100 125150 175 TJ( C) 0-75 -50-25 0 25 50 75 100 125 150 TJ( C) Figure 12. Source-drain diode forward characteristics DocID026836 Rev 3 7/13 13
Test circuits STP110N7F6 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T. 2200 μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH 3.3 1000 μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/13 DocID026836 Rev 3
Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID026836 Rev 3 9/13 13
Package information STP110N7F6 4.1 TO-220 package information Figure 19. TO-220 type A package outline 10/13 DocID026836 Rev 3
Package information Table 8. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øp 3.75 3.85 Q 2.65 2.95 DocID026836 Rev 3 11/13 13
Revision history STP110N7F6 5 Revision history Table 9. Document revision history Date Revision Changes 04-Dec-2014 1 First release. 30-Mar-2015 2 Document status promoted from preliminary to production data. 13-Oct-2016 3 Updated Figure 11: Normalized on-resistance vs temperature and Section 4.1: TO-220 package information. Minor text changes. 12/13 DocID026836 Rev 3
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