HighspeedfastIGBTinTRENCHSTOP TM 5technologycopackedwith RAPIDfastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering: BestinClassefficiencyinhardswitchingandresonant topologies PlugandplayreplacementofpreviousgenerationIGBTs 65Vbreakdownvoltage LowgatechargeQG IGBTcopackedwithRAPIDfastandsoftantiparalleldiode Maximumjunctiontemperature75 C Dynamicallystresstested QualifiedaccordingtoAECQ Greenpackage(RoHScompliant) CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: Offboardcharger Onboardcharger DC/DCconverter PowerFactorcorrection 2 3 Packagepindefinition: Pingate Pin2&backsidecollector Pin3emitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIKW4N65DH5 65V 4A.66V 75 C AK4EDH5 PGTO2473 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2. www.infineon.com
TableofContents Description........................................................................ Table of Contents................................................................... 2 Maximum Ratings................................................................... 3 Thermal Resistance................................................................. 3 Electrical Characteristics.............................................................. 4 Electrical Characteristics Diagrams..................................................... 7 Package Drawing...................................................................3 Testing Conditions..................................................................4 Revision History....................................................................5 Disclaimer.........................................................................6 Datasheet 2 V2.
MaximumRatings Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 65 V DCcollectorcurrent,limitedbyTvjmax TC=25 C TC= C IC 74. 46. Pulsedcollectorcurrent,tplimitedbyTvjmax ) ICpuls 2. A Turn off safe operating area VCE 65V,Tvj 75 C,tp=µs ) 2. A Diodeforwardcurrent,limitedbyTvjmax TC=25 C TC= C IF 36. 2. Diodepulsedcurrent,tplimitedbyTvjmax ) IFpuls 2. A Gateemitter voltage TransientGateemittervoltage(tp µs,d<.) PowerdissipationTC=25 C PowerdissipationTC= C VGE Ptot ±2 ±3 25. 25. Operating junction temperature Tvj 4...+75 C Storage temperature Tstg 55...+5 C Soldering temperature, 2) wave soldering.6mm (.63in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A A V W C M.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jC).6 K/W Rth(jC).8 K/W Rth(ja) 4 K/W ) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications. Datasheet 3 V2.
ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 65 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=5.V,IC=4.A Tvj=25 C Tvj=25 C Tvj=75 C VGE=V,IF=2.A Tvj=25 C Tvj=25 C Tvj=75 C Gateemitter threshold voltage VGE(th) IC=.4mA,VCE=VGE 3.2 4. 4.8 V Zero gate voltage collector current ICES VCE=65V,VGE=V Tvj=25 C Tvj=75 C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=4.A 5. S.66.85 2.5.55.53.49 8 2..8 4 V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 23 Output capacitance Coes VCE=25V,VGE=V,f=MHz 43 Reverse transfer capacitance Cres 9 Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG VCC=52V,IC=4.A, VGE=5V pf 92. nc LE 3. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 2 ns Rise time VCC=4V,IC=2.A, tr ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 53 ns Fall time Lσ=3nH,Cσ=3pF tf ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.38 mj Turnoff energy Eoff diode reverse recovery..2 mj Total switching energy Ets.5 mj Datasheet 4 V2.
Turnon delay time td(on) Tvj=25 C, 8 ns Rise time VCC=4V,IC=5.A, tr 4 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 6 ns Fall time Lσ=3nH,Cσ=3pF tf 24 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.8 mj Turnoff energy Eoff diode reverse recovery..4 mj Total switching energy Ets.2 mj DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 75 ns Diode reverse recovery charge VR=4V, Qrr.52 µc IF=2.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 3. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 27 A/µs Diode reverse recovery time trr Tvj=25 C, 37 ns Diode reverse recovery charge VR=4V, Qrr.23 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=a/µs.2 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 55 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=5 C Turnon delay time td(on) Tvj=5 C, 2 ns Rise time VCC=4V,IC=2.A, tr 2 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 9 ns Fall time Lσ=3nH,Cσ=3pF tf 4 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.57 mj Turnoff energy Eoff diode reverse recovery..22 mj Total switching energy Ets.79 mj Turnon delay time td(on) Tvj=5 C, 7 ns Rise time VCC=4V,IC=5.A, tr 4 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 223 ns Fall time Lσ=3nH,Cσ=3pF tf 25 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.6 mj Turnoff energy Eoff diode reverse recovery..6 mj Total switching energy Ets.22 mj Datasheet 5 V2.
DiodeCharacteristic,atTvj=5 C Diode reverse recovery time trr Tvj=5 C, 28 ns Diode reverse recovery charge VR=4V, Qrr.22 µc IF=2.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 8.6 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 7 A/µs Diode reverse recovery time trr Tvj=5 C, 68 ns Diode reverse recovery charge VR=4V, Qrr.58 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 5.5 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 32 A/µs Datasheet 6 V2.
275 8 25 7 225 Ptot,POWERDISSIPATION[W] 2 75 5 25 75 IC,COLLECTORCURRENT[A] 6 5 4 3 2 5 25 25 5 75 25 5 75 TC,CASETEMPERATURE[ C] Figure. Powerdissipationasafunctionofcase temperature (Tvj 75 C) 25 5 75 25 5 75 TC,CASETEMPERATURE[ C] Figure 2. Collectorcurrentasafunctionofcase temperature (VGE 5V,Tvj 75 C) 2 2 VGE = 2V VGE = 2V IC,COLLECTORCURRENT[A] 8 6 4 8V 5V 2V V 8V 7V 6V IC,COLLECTORCURRENT[A] 8 6 4 8V 5V 2V V 8V 7V 6V 5V 5V 2 2 2 3 4 5 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25 C) 2 3 4 5 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=5 C) Datasheet 7 V2.
IC,COLLECTORCURRENT[A] 2 8 6 4 2 Tj = 25 C Tj = 5 C VCEsat,COLLECTOREMITTERSATURATION[V] 2.5 2.25 2..75.5.25..75 IC = 5A IC = A IC = 2A IC = 4A 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 VGE,GATEEMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=2V).5 25 5 75 25 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 6. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=5V) td(off) tf td(on) tr td(off) tf td(on) tr t,switchingtimes[ns] t,switchingtimes[ns] 2 4 6 8 2 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,rG=5Ω,Dynamictestcircuitin 5 5 25 35 45 55 65 75 85 rg,gateresistor[ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,IC=2A,Dynamictestcircuitin Datasheet Figure E) 8 Figure E) V2.
t,switchingtimes[ns] td(off) tf td(on) tr VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] 5.5 5. 4.5 4. 3.5 3. 2.5 2..5 typ. min. max. 25 5 75 25 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=4v,vge=5/v, IC=2A,rG=5Ω,DynamictestcircuitinFigure E) 8. 25 5 75 25 5 Tvj,JUNCTIONTEMPERATURE[ C] Figure. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=.4mA).6 Eoff Eoff 7 Eon Ets.4 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 6 5 4 3 2 E,SWITCHINGENERGYLOSSES[mJ].2..8.6.4.2 2 4 6 8 2 IC,COLLECTORCURRENT[A] Figure. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,rG=5Ω,Dynamictestcircuitin. 5 5 25 35 45 55 65 75 85 rg,gateresistor[ω] Figure 2. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tvj=5 C,VCE=4V, VGE=5/V,IC=2A,Dynamictestcircuitin Datasheet Figure E) 9 Figure E) V2.
.9. Eoff Eoff.8 Eon Ets.9 Eon Ets E,SWITCHINGENERGYLOSSES[mJ].7.6.5.4.3.2 E,SWITCHINGENERGYLOSSES[mJ].8.7.6.5.4.3.2... 25 5 75 25 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 3. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=4v,vge=5/v, IC=2A,rG=5Ω,Dynamictestcircuitin Figure E). 2 25 3 35 4 45 5 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,tvj=5 C,VGE=5/V, IC=2A,rG=5Ω,Dynamictestcircuitin Figure E) 6 4 VCC=3V VCC=52V E+4 Cies Coes Cres VGE,GATEEMITTERVOLTAGE[V] 2 8 6 4 C,CAPACITANCE[pF] 2 2 4 6 8 QGE,GATECHARGE[nC] Figure 5. Typicalgatecharge (IC=4A) 5 5 2 25 3 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 6. Typicalcapacitanceasafunctionof collectoremittervoltage (VGE=V,f=MHz) Datasheet V2.
AIKW4N65DH5 High speed switching series fifth generation Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] D =.5.2...5.2. single pulse. D =.5.2..5..2. single pulse. i: 2 3 4 ri[k/w]:.8245484.4497.25774.5878 τi[s]: 7.3E5 7.E4.235548.8288. E6 E5 E4... i: 2 3 ri[k/w]:.67584.775759.354826 τi[s]: 3.4E4 4.7E3.4689. E7 E6 tp, PULSE WIDTH [s]...4 Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A.3 Qrr, REVERSE RECOVERY CHARGE [µc] 5 trr, REVERSE RECOVERY TIME [ns]. Figure 8. Diode transient thermal impedance as a function of pulse width (D=tp/T) 6 4 3 2 9 8 7 Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A.2...9.8.7.6.5.4 7 9 3.3 5 5 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 9. Typical reverse recovery time as a function of diode current slope (VR=4V) Datasheet E4 tp, PULSE WIDTH [s] Figure 7. IGBT transient thermal impedance (D=tp/T) 6 5 E5 7 9 3 5 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery charge as a function of diode current slope (VR=4V) V 2.
AIKW4N65DH5 High speed switching series fifth generation 22 Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A 2 Tj = 25 C, IF = 2A Tj = 5 C, IF = 2A dirr/dt, DIODE PEAK RATE OF FALL OF Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] 2 9 8 7 6 5 4 3 2 9 5 5 2 25 3 35 8 7 5 7 9 3 4 5 5 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery current as a function of diode current slope (VR=4V) 3 5 2.2 Tj = 25 C Tj = 5 C IF = A IF = 2A IF = 4A 2. VF, FORWARD VOLTAGE [V] 5 IF, FORWARD CURRENT [A] 9 Figure 22. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) 6 4 3 2 7 dif/dt, DIODE CURRENT SLOPE [A/µs].8.6.4.2...5..5 2. 2.5.8 3. VF, FORWARD VOLTAGE [V] Figure 23. Typical diode forward current as a function of forward voltage Datasheet 25 5 75 25 5 75 Tvj, JUNCTION TEMPERATURE [ C] Figure 24. Typical diode forward voltage as a function of junction temperature 2 V 2.
AIKW4N65DH5 High speed switching series fifth generation Package Drawing PGTO2473 Datasheet 3 V 2.
AIKW4N65DH5 High speed switching series fifth generation Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 4 V 2.
AIKW4N65DH5 High speed switching series fifth generation Revision History AIKW4N65DH5 Revision:, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) 2. Data sheet created Datasheet 5 V 2.
Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AUConvertIR, AURIX, C66, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DIPOL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, myd, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC Trademarks updated November 25 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 27. All Rights Reserved. Important Notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.