FERD20H60C. 60 V field-effect rectifier diode. Description. Features

Similar documents
STPS20L45C. Low drop power Schottky rectifier

FERD15S50S. 50 V field-effect rectifier diode. Description. Features

STPSC20H V power Schottky silicon carbide diode. Description. Features

STBR3012. High voltage rectifier for bridge applications

STPSC10H065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STPS1L40-Y. Automotive low drop power Schottky rectifier

TL = 140 C 2 A. Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-l) Junction to lead 20 C/W

STPS1545. Power Schottky rectifier

STPS60170C. High voltage power Schottky rectifier

STPS200170TV1. High voltage power Schottky rectifier

STPS20LCD80CB. High voltage power Schottky rectifier

STPSC10065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STTH15RQ06-Y. Automotive turbo 2 ultrafast high voltage rectifier

STPS20SM100S. Power Schottky rectifier. Description. Features

STPSC2H V power Schottky silicon carbide diode. Description. Features

STPSC10H V power Schottky silicon carbide diode. Description. Features

STPS1L40. Low drop power Schottky rectifier

STPSC12065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STPSC20065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STTH1R02-Y. Automotive ultrafast rectifier

STPS160H100TV. High voltage power Schottky rectifier. Description. Features

STTH8R02D-Y. Automotive ultrafast rectifier

STPS20M100S. Power Schottky rectifier. Description. Features TO-220AB TO-220FPAB I 2 PAK D 2 PAK

STPSC20H V power Schottky silicon carbide diode. Datasheet. Features. Description. No or negligible reverse recovery

STPSC10H12C V power Schottky silicon carbide diode

STPS40SM120C. Power Schottky rectifier. Description. Features

STPS8H100. High voltage power Schottky rectifier. Features. Description

STTH2002C. High efficiency ultrafast diode. Features. Description

STTH4R02-Y. Automotive ultrafast recovery diode. Description. Features

STTH30L06C. Turbo 2 ultratfast high voltage rectifier

STPSC30H12C V power Schottky silicon carbide diode. Description. Features

STPSC40065C. 650 V power Schottky silicon carbide diode. Description. Features

STPSC20H12C V power Schottky silicon carbide diode

STTH2R02-Y. Automotive ultrafast recovery diode. Description. Features

STTH2003. High frequency secondary rectifier. Features. Description

STPS3045DJF. Power Schottky rectifier. Description. Features

STPSC10H V power Schottky silicon carbide diode. Datasheet. Features. Description

STPS3H V power Schottky rectifier. Datasheet. Features. Applications. Description

STPS10170C. High voltage power Schottky rectifier. Description. Features

BAT54-Y. Automotive small signal Schottky diodes. Description. Features

STTH120L06TV. Turbo 2 ultrafast high voltage rectifier

STPSC V power Schottky silicon carbide diode

STPS40170C. 170 V power Schottky rectifier. Datasheet. Features. Applications. Description

STPS1L60. Power Schottky rectifier

STBR3012-Y. Automotive high voltage rectifier for bridge applications. Datasheet. Features. Applications. Description

STPS10150C. High voltage power Schottky rectifier. Description. Features

STPS1150-Y. Automotive power Schottky rectifier. Datasheet. Features. Description

STTH3006. Turbo 2 ultrafast high voltage rectifier

STTH1R04-Y. Automotive ultrafast recovery diode

STTH6003. High frequency secondary rectifier

No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications

STPS30H100C. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description. Negligible switching losses Low leakage current

Negligible switching losses Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance K

STPS20H100C. 100 V power Schottky rectifier. Datasheet. Features. Description

STPSC6H V power Schottky silicon carbide diode. Description. Features

STTH3L06S. Turbo 2 ultrafast high voltage rectifier

FERD15S50. Field effect rectifier. Features. Description

STPS20S100C. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description

STPS80170C. 170 V power Schottky rectifier. Datasheet. Features. Applications. Description

STPS4S200. Power Schottky rectifier. Description. Features

STPS15L60C. Power Schottky rectifier. Description. Features

STPS40H100CW. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description

STPS3170. Power Schottky rectifier. Description. Features

STPS2L V power Schottky rectifier. Datasheet. Features. Applications. Description K SMB

STPS A - 30 V power Schottky rectifier. Datasheet. Features. Applications. Description

Negligible switching losses Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance K

High junction temperature capability Low leakage current Low thermal resistance High frequency operation Avalanche capability ECOPACK 2 compliant

STTH V ultrafast high voltage rectifier. Datasheet. Features. Applications. Description

STTH4R02. Ultrafast recovery diode. Description. Features

STTH1003S. High efficiency rectifier. Description. Features

BZW06. Transil. Description. Features

STPSC20H065C-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STPS30H60-Y. Automotive power Schottky rectifier. Features. Description

STTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features

BAT30. Small signal Schottky diodes. Description. Features

STTH512. Ultrafast recovery V diode. Description. Features

STPS40170C-Y. Automotive high voltage power Schottky rectifier. Features. Description

T x V 25 A Snubberless Triac. Description. Features. Applications. Benefits

TN B. Standard 15 A SCRs. Description. Features. Application. Benefits

TS420. Sensitive gate 4 A SCRs

STPSC V power Schottky silicon carbide diode. Features. Description

STPS40M80C. Power Schottky rectifier. Features. Description

TN1605H-6G. High temperature 16 A SCRs. Description. Features. Applications

BAT30F4. Small signal Schottky diodes. Description. Features

STPS30M100S. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description

TN3050H-12GY-TR. 30 A V automotive grade SCR Thyristor. Description. Features. Applications

T2035H, T2050H. 20 A high temperature Snubberless Triacs. Description. Features. Applications

STPS1045B-Y. Automotive power Schottky rectifier. Features. Description

STPS3L40. Power Schottky rectifier. Main product characteristics A. Features and Benefits. Description. Order codes SMC STPS3L40S

STIEC45-xxAS, STIEC45-xxACS

SMM4FxxA. 400 W Transil TM. Description. Features. Complies with the following standards

AEC-Q101 qualified. High junction temperature capability Ultrafast with soft recovery behavior Low reverse current

1N6642U. Aerospace 0.3 A V switching diode. Description. Features

STPS10150CG. High voltage power Schottky rectifier. Main product characteristics. Features and benefits. Description. Order Codes

STTH16L06C. Turbo 2 ultrafast high voltage rectifier. Features. Description

STTH2003CG. Hight frequency secondary rectifier. Main product characteristics. Features and benefits. Description. Order codes.

STPS340. Power Schottky rectifier. Description. Features

TN1215, TYN612, TYN812, TYN1012

STPS2H100. Power Schottky rectifier. Features. Description

STPS140Z-Y. Automotive power Schottky rectifier. Features. Description

Transcription:

60 V field-effect rectifier diode Datasheet - production data K TO-220AB Features A1 K A2 K A2 K A2 A1 A1 D²PAK ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. This device is suitable for use in adapters and chargers. Symbol IF(AV) VRRM VF (typ.) Table 1: Device summary Value 2 x 10 A 60 V 0.39 V Tj (max.) 175 C September 2017 DocID030963 Rev 1 1/12 This is information on a product in full production. www.st.com

Characteristics FERD20H60C 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, per diode, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms current 30 A IF(AV) IFSM Average forward current δ = 0.5, square wave Surge non repetitive forward current TC = 155 C Per diode 10 Per device 20 tp = 10 ms sinusoidal 130 A Tstg Storage temperature range -65 to +175 C Notes: Tj Maximum operating junction temperature (1) +175 C (1) (dptot/dtj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. A Table 3: Thermal resistance parameters Symbol Parameter Max. value Unit Rth(j-c) Per diode 2.2 Junction to case Per device 1.3 C/W Rth(c) Coupling 0.4 Table 4: Static electrical characteristics, per diode Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 200 µa IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 5 ms, δ < 2% (2) Pulse test: tp = 380 µs, δ < 2% VR = VRRM Tj = 125 C - 10 20 Tj = 125 C VR = 45 V - 6 12 Tj = 25 C - 0.34 0.38 IF = 2 A Tj = 125 C - 0.28 0.315 Tj = 25 C - 0.415 0.465 IF = 5 A Tj = 125 C - 0.39 0.435 Tj = 25 C - 0.52 0.575 IF = 10 A Tj = 125 C - 0.525 0.585 ma V To evaluate the conduction losses use the following equation: P = 0.285 x IF(AV) + 0.03 x IF 2 (RMS) 2/12 DocID030963 Rev 1

Characteristics 1.1 Characteristics (curves) Figure 1: Average forward current versus ambient temperature (δ = 0.5, per diode) Figure 2: Relative variation of thermal impedance junction to case versus pulse duration I F(AV) (A) 25 R th(j-a) = R th(j-c) 20 15 10 T 5 δ =tp/t tp T amb( C) 0 0 25 50 75 100 125 150 175 Z th(j-c) /R th(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 Single pulse 0.3 0.2 0.1 t p(s) 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 3: Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 4: Junction capacitance versus reverse voltage applied (typical values, per diode) I R (ma) 1.E+02 1.E+01 T j = 150 C T j = 125 C C(pF) 10000 F = 1 MHz V osc = 30 mv RMS T j = 25 C 1.E+00 T j = 100 C T j = 75 C 1000 1.E-01 T j = 50 C T j = 25 C V R (V) 1.E-02 0 10 20 30 40 50 60 V R(V) 100 1 10 100 Figure 5: Forward voltage drop versus forward current (typical values, per diode) Figure 6: Forward voltage drop versus forward current (typical values, per diode) DocID030963 Rev 1 3/12

Characteristics Figure 7: Thermal resistance junction to ambient versus copper surface under tab for D²PAK (typical values) FERD20H60C 80 70 60 R th(j-a) ( C/W) D²PAK Epoxy printed board FR4, copper thickness = 35 µm 50 40 30 20 10 S Cu(cm²) 0 0 5 10 15 20 25 30 35 40 4/12 DocID030963 Rev 1

Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Cooling method: by conduction (C) Epoxy meets UL94,V0 Recommended torque value: 0.55 N m (for TO-220AB) Maximum torque value: 0.6 N m (for TO-220AB) DocID030963 Rev 1 5/12

Package information 2.1 TO-220AB package information Figure 8: TO-220AB package outline FERD20H60C 6/12 DocID030963 Rev 1

Package information Table 5: TO-220AB package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.028 D 15.25 15.75 0.600 0.620 E 10.00 10.40 0.394 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 F 0.51 0.60 0.020 0.024 J1 2.40 2.72 0.094 0.107 H1 6.20 6.60 0.244 0.256 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L20 16.40 typ. 0.646 typ. L30 28.90 typ. 1.138 Ø P 3.75 3.85 0.148 0.156 Q 2.65 2.95 0.104 0.116 DocID030963 Rev 1 7/12

Package information 2.2 D²PAK package information Figure 9: D²PAK package outline FERD20H60C 8/12 DocID030963 Rev 1

Package information Table 6: D²PAK package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 7.75 8.00 0.295 0.305 0.315 D2 1.10 1.30 1.50 0.043 0.051 0.060 E 10 10.40 0.394 0.409 E1 8.50 8.70 8.90 0.335 0.343 0.346 E2 6.85 7.05 7.25 0.266 0.278 0.282 e 2.54 0.100 e1 4.88 5.28 0.190 0.205 H 15 15.85 0.591 0.624 J1 2.49 2.69 0.097 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.049 0.055 L2 1.30 1.75 0.050 0.069 R 0.4 0.015 V2 0 8 0 8 DocID030963 Rev 1 9/12

Package information Figure 10: D²PAK recommended footprint (dimensions are in mm) FERD20H60C 10/12 DocID030963 Rev 1

Ordering information 3 Ordering information Table 7: Ordering information Order code Marking Package Weight Base qty. Delivery mode FERD20H60CTS FD20H60CTS TO-220AB 1.38 g 50 Tube FERD20H60CG-TR FD20H60CG D²PAK 1.43 g 1000 Tape and reel 4 Revision history Table 8: Document revision history Date Revision Changes 01-Sep-2017 1 Initial release. DocID030963 Rev 1 11/12

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2017 STMicroelectronics All rights reserved 12/12 DocID030963 Rev 1