MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LO SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor V CEO = 80V; R SAT = 68m ; C = 3.5A PNP Transistor V CEO = -70V; R SAT = 117m ; C = -2.5A DESCRIPTION ZXTDE4M832 Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package), these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions. Users will also gain several other key benefits: Performance capability equivalent to much larger packages 3mm x 2mm Dual Die MLP Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count C2 C1 FEATURES Low Equivalent On Resistance Extremely Low Saturation (-185 max @ 1A--NPN) B2 B1 H FE specified up to -5A I C = -3.5A Continuous 3mm x 2mm MLP APPLICATIONS DC - DC Converters Charging circuits Power switches Motor control ORDERING INFORMATION E2 PINOUT E1 DEVICE REEL TAPE IDTH QUANTITY PER REEL ZXTDE4M832TA 7 8mm 3000 ZXTDE4M832TC 13 8mm 000 3mm x 2mm Dual MLP underside view DEVICE MARKING DE4 1
ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base V CBO 0-70 V Collector-Emitter V CEO 80-70 V Emitter-Base V EBO 7.5-7.5 V Peak Pulse Current I CM 5-3 A Continuous (a)(f) I C 3.5-2.5 A Base Current I B 00 ma Power Dissipation at TA=25 C (a)(f) Power Dissipation at TA=25 C (b)(f) Power Dissipation at TA=25 C (c)(f) Power Dissipation at TA=25 C (d)(f) Power Dissipation at TA=25 C (d)(g) Power Dissipation at TA=25 C (e)(g) P D 1.5 12 P D 2.45 19.6 P D 1 8 P D 1.13 9 P D 1.7 13.6 P D 3 24 Storage Temperature Range T stg -55 to +150 C Junction Temperature T j 150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θja 83.3 C/ Junction to Ambient (b)(f) R θja 51 C/ Junction to Ambient (c)(f) R θja 125 C/ Junction to Ambient (d)(f) R θja 111 C/ Junction to Ambient (d)(g) R θja 73.5 C/ Junction to Ambient (e)(g) R θja 41.7 C/ Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250 C/ giving a power rating of Ptot = 500m. 2
TYPICAL CHARACTERISTICS I C (A) V CE(SAT) Limited 1 DC 1s 0ms ms Note (a)(f) 1ms 0us 1 Single Pulse, T amb =25 C 1 0 V CE Collector-Emitter (V) NPN Safe Operating Area I C (A) 1 1 V CE(SAT) Limited DC 1s 0ms ms Note (a)(f) 1ms 0us Single Pulse, T amb =25 C 1 0 V CE Collector-Emitter (V) PNP Safe Operating Area Thermal Resistance ( C/) 80 Note (a)(f) 60 D=0.5 40 D= 20 Single Pulse D=5 D= 0 0µ 1m m 0m 1 0 1k Pulse idth (s) Transient Thermal Impedance Max Power Dissipation () 3.5 3.0 2.5 2.0 1.5 2oz Cu T amb =25 C Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)(g) 0.5 1oz Cu Note (d)(f) 0 25 50 75 0 125 150 Temperature ( C) Derating Curve P D Dissipation () 3.5 3.0 2.5 2.0 1.5 T amb =25 C T jmax =150 C Continuous 2oz copper Note (f) 2oz copper Note (g) 1oz copper 0.5 1oz copper Note (g) Note (f) 1 0 BoardCuArea(sqcm) Power Dissipation v Board Area Thermal Resistance ( C/) 225 200 175 150 125 1oz copper Note (f) 1oz copper Note (g) 0 75 2oz copper 50 Note (f) 25 2oz copper Note (g) 0 1 0 BoardCuArea(sqcm) Thermal Resistance v Board Area 3
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V (BR)CBO 0 180 V I C =0 A Collector-Emitter Breakdown V (BR)CEO 80 1 V I C =ma* Emitter-Base Breakdown V (BR)EBO 7.5 8.2 V I E =0 A Collector Cut-Off Current I CBO 25 na V CB =80V Emitter Cut-Off Current I EBO 25 na V EB =6V Collector Emitter Cut-Off Current I CES 25 na V CE =65V Collector-Emitter Saturation V CE(sat) 15 45 145 160 240 20 60 185 200 325 I C =A, I B =ma* I C =0.5A, I B =50mA* I C =1A, I B =20mA I C =1.5A, I B =50mA I C =3.5A, I B =300mA Base-Emitter Saturation V BE(sat) 9 1.175 V I C =3.5A, I B =300mA* Base-Emitter Turn-On V BE(on) 0.96 5 V I C =3.5A, V CE =2V* Static Forward Current Transfer Ratio h FE 200 300 1 60 20 450 450 170 90 30 900 I C =ma, V CE =2V* I C =200mA, V CE =2V* I C =1A, V CE =2V* I C =1.5A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* Transition Frequency f T 0 160 MHz I C =50mA, V CE =V f=0mhz Output Capacitance C obo 11.5 18 pf V CB =V, f=1mhz Turn-On Time t (on) 86 ns V CC =V, I C =1A Turn-Off Time t (off) 1128 ns I B1 =I B2 =25mA *Measured under pulsed conditions. 4
NPN TYPICAL CHARACTERISTICS 5
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V (BR)CBO -70-150 V I C =-0 A Collector-Emitter Breakdown V (BR)CEO -70-125 V I C =-ma* Emitter-Base Breakdown V (BR)EBO -7.5-8.5 V I E =-0 A Collector Cut-Off Current I CBO -25 na V CB =-55V Emitter Cut-Off Current I EBO -25 na V EB =-6V Collector Emitter Cut-Off Current I CES -25 na V CE =-55V Collector-Emitter Saturation V CE(sat) -35-135 -140-175 -50-200 -220-260 I C =-A, I B =-ma* I C =-0.5A, I B =-20mA* I C =-A, I B =-0mA* I C =-1.5A, I B =-200mA* Base-Emitter Saturation V BE(sat) 0.94 5 V I C =-1.5A, I B =-200mA* Base-Emitter Turn-On V BE(on) 0.78 0 V I C =-1.5A, V CE =-5V* Static Forward Current Transfer Ratio h FE 300 300 175 40 470 450 275 60 I C =-ma, V CE =-5V* I C =-0mA, V CE =-5V* I C =-1A, V CE =-5V* I C =-1.5A, V CE =-5V* I C =-3A, V CE =-5V* Transition Frequency f T 150 180 MHz I C =-50mA, V CE =-V f=0mhz Output Capacitance C obo 14 20 pf V CB =-V, f=1mhz Turn-On Time t (on) 40 ns V CC =-50V, I C =-1A Turn-Off Time t (off) 700 ns I B1 =I B2 =-50mA *Measured under pulsed conditions. 6
PNP TYPICAL CHARACTERISTICS ZXTDE4M832 0.6 0.6 25 C IC/IB= 0.5 0.5 V CE (VOLTS) 0.3 IC/IB=50 IC/IB=20 IC/IB= IC/IB=5 V CE (VOLTS) 0.3 0 C 25 C -55 C ma 0mA 1A ma 0mA 1A VBE(SAT) vs IC VCE(SAT) vs IC Normalised Gain 1.6 1.2 VCE=5V 0 C 1.4 1.2 0.8 25 C 450 0.8 0.6 0.6 225-55 C T pical Gain (hfe) V BE (VOLTS) IC/IB=5-55 C 25 C 0 C ma 0mA 1A ma 0mA 1A hfe vs IC VBE(SAT) vs IC VCE=5V SINGLE PULSE TEST Tamb = 25 deg C 0.8-55 C V BE (VOLTS) 0.6 25 C 0 C I C (AMPS) D.C. 1s 0ms ms 1ms 0µs ma 0mA 1A 1 1 0 VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 7
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) Zetex plc 2002 CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES INCHES MILLIMETRES INCHES DIM MIN. MAX. MIN. MAX. DIM MIN. MAX. MIN. MAX. A 0.80 0 31 39 e 0.65 REF 256 BSC A1 0 5 0 02 E 2.00 BSC 787 BSC A2 0.65 0.75 255 295 E2 3 0.63 17 249 A3 5 5 06 098 E4 6 0.36 06 14 b 4 0.34 09 13 L 0 5 078 157 b1 7 0.30 066 118 L2 25 0 05 D 3.00 BSC 18 BSC r 75 BSC 029 BSC D2 0.82 2 32 40 0 12 0 12 D3 1 1.21 397 476 Europe Americas Asia Pacific Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 260 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com 8