Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9DAU SOT-7 PRODUCT SUMMARY V CES V I C DC 9 A at 9 C V CE(on) typical at 75 A, 5 C 3.3 V Speed 8 khz to 3 khz Package SOT-7 Circuit Single switch diode FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Q rr, low switching energy Positive V CE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?999 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting on heatsink Plug-in compatible with other SOT-7 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I () C T C = 9 C 9 T C = 5 C 49 Pulsed collector current I CM Clamped inductive load current I LM A T C = 5 C 76 Diode continuous forward current I F T C = 9 C 46 Gate to emitter voltage V GE ± V T C = 5 C 86 Power dissipation, IGBT P D T C = 9 C 44 T C = 5 C 357 Power dissipation, diode P D T C = 9 C 7 W Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do exceed the maximum temperature of terminals Revision: -May-6 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9DAU ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa - - Collector to emitter voltage V CE(on) V GE = 5 V, I C = 75 A, T J = 5 C - 3.6 3.9 V V GE = 5 V, I C = 75 A - 3.3 3.8 V GE = 5 V, I C = 75 A, T J = 5 C - 3.7 - V CE = V GE, I C = 5 μa 4 5 6 Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa, T J = 5 C - 3. - Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) - - - mv/ C V GE = V, V CE = V - 7 5 μa Collector to emitter leakage current I CES V GE = V, V CE = V, T J = 5 C -.4 ma V GE = V, V CE = V, T J = 5 C - 6.5 Forward voltage drop, diode V FM V GE = V, I F = 75 A, T J = 5 C - 3. 5. V V GE = V, I F = 75 A - 3.4 5. V GE = V, I F = 75 A, T J = 5 C - 3.5 - Gate to emitter leakage current I GES V GE = ± V - - ± 5 na SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g - 69 - Gate to emitter charge (turn-on) Q ge I C = 5 A, V CC = 6 V, V GE = 5 V - 65 - nc Gate to collector charge (turn-on) Q gc - 5 - Turn-on switching loss E on -. - Turn-off switching loss E off -. - mj Total switching loss E tot I = 75 A, V = 6 V, C CC - 3.3 - time Turn-on delay t d(on) V GE = 5 V, R g = 5-5 - Rise time t r L = 5 μh, T J = 5 C - 38 - Turn-off delay time t d(off) Energy losses - 8 - ns Fall time t include tail and f - 9 - diode recovery Turn-on switching loss E on Diode used -.7 - Turn-off switching loss E off HFA6PB - 4.8 - mj Total switching loss E tot I = 75 A, V = 6 V, C CC - 5.78 - Turn-on delay time t d(on) V GE = 5 V, R g = 5-45 - Rise time t r L = 5 μh, T J = 5 C - 48 - Turn-off delay time t d(off) - 8 - ns Fall time t f - 4 - Reverse bias safe operating area RBSOA T J = 5 C, I C = A, R g = V GE = 5 V to V, V CC = 9 V, V P = V, L = 5 μh Fullsquare Diode reverse recovery time t rr - 4 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = V - 3 - A Diode recovery charge Q rr - 86 - nc Diode reverse recovery time t rr - - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = V, T J = 5 C - 9 - A Diode recovery charge Q rr - 88 - nc Revision: -May-6 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9DAU THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg -4-5 C Junction to case IGBT - -.45 R thjc Diode - -.35 C/W Case to heatsink R thcs Flat, greased surface -.5 - Weight - 3 - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink - -.3 (.5) Nm (lbf.in) Case style SOT-7 6 6 Allowable Case Temperature ( C) 4 8 6 4 DC 4 6 8 4 6 Allowable Case Temperature ( C) 4 8 6 4 4 6 8 I C - Continuous Collector Current (A) I F - Continuous Forward Current (A) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Allowable Forward Current vs. Case Temperature Diode Leg I C - Collector-to-Emitter Current (A) 5 5 V GE = 5 V T J = 5 C T J = 5 C T J = 5 C... 3. 4. 5. 6. 7. I F - Forward Current (A) 6 T J = 5 C 8 T J = 5 C T J = 5 C 4... 3. 4. 5. V CE - Collector-to-Emitter Voltage (V) V FM - Forward Voltage Drop (V) Fig. - Typical Collector to Emitter Current Output Characteristics of IGBT Fig. 4 - Typical Diode Forward Voltage Drop Characteristics Revision: -May-6 3 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9DAU www.vishay.com I C - Collector-to-Emitter Current (A) 9 8 7 6 T J = 5 C 5 4 3 T J = 5 C 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. V CE - Collector-to-Emitter Voltage (V) 5 4.5 4 I C = A I C = 75 A 3.5 3 I C = 5 A.5 I C = 5 A.5 4 6 8 4 6 V GE - Gate-to-Emitter Voltage (V) T J - Junction Temperature ( C) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V I CES - Collector-to-Emitter Current (A) T J = 5 C T J = 5 C.. T. J = 5 C. 4 6 8 Switching Energy (mj) 5 4.5 4 3.5 3.5.5.5 E off E on 3 4 5 6 7 8 9 V CES - Collector-to-Emitter Voltage (V) I C - Collector Current (A) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical IGBT Energy Losses vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V, Diode used HFA6PB 6 V GE(th) Threshold Voltage (V) 5.5 5 4.5 4 3.5 3.5 T J = 5 C T J = 5 C Switching Time (μs). t d(on) t r t d(off) t f..4.6.8. I C (A). 4 6 8 I C - Collector Current (A) Fig. 7 - Typical IGBT Threshold Voltage Fig. - Typical IGBT Switching Time vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V, Diode used HFA6PB Revision: -May-6 4 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9DAU Energy Losses (mj) 4 8 6 4 E on E off Q rr (nc) 3 5 5 V R = V I F = 5 A 5 C 5 C 3 4 5 R g (Ω) 5 di F /dt (A/μs) Fig. - Typical IGBT Energy Loss vs. R g, T J = 5 C, I C = 75 A, L = 5 μh, V CC = 6 V, V GE = 5 V, Diode used HFA6PB Fig. 4 - Stored Charge vs. di F /dt of Diode 4 35 V R = V I F = 5 A Switching Time (µs) t f t r t d(on) t d(off) I RR (A) 3 5 5 5 C 5 C 3 4 5 5 R G (Ω) di F /dt (A/μs) Fig. - Typical IGBT Switching Time vs. R g T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V Fig. 5 - Typical Reverse Recovery Current vs. di F /dt of Diode 3 5 5 C V R = V I F = 5 A t rr (ns) 5 5 C 5 di F /dt (A/μs) Fig. 3 - Typical t rr Diode vs. di F /dt V RR = V, I F = 5 A Revision: -May-6 5 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9DAU Z thjc - Thermal Impedance Junction to Case ( C/W)...75.5.5..5. DC P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C t t..... Rectangular Pulse Duration (s) Fig. 6 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)...75.5.5..5. DC P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C t t..... Rectangular Pulse Duration (s) Fig. 7 - Maximum Thermal Impedance Z thjc Characteristics (Diode) I C (A) V CE (V) Fig. 8 - IGBT Reverse Bias SOA, TJ = 5 C, V GE = 5 V, Revision: -May-6 6 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9DAU 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max.) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. 9a - Clamped Inductive Load Test Circuit Fig. 9b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + - 5 V R g D.U.T./ driver + - V CC Fig. a - Switching Loss Test Circuit 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) Fig. b - Switching Loss Waveforms Test Circuit Revision: -May-6 7 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9DAU ORDERING INFORMATION TABLE Device code VS- G B 9 D A U 3 4 5 6 7 8 3 4 5 6 7 8 - product - Insulated Gate Bipolar Transistor (IGBT) - B = IGBT Generation 5 - Current rating (9 = 9 A) - Circuit configuration (D = Single switch with antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating ( = V) - Speed/type (U = Ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch with antiparallel diode D (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9543 www.vishay.com/doc?9545 Revision: -May-6 8 Document Number: 947 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B- 7.45 (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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