SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1. GHz. The high gain and broadband performance of these devices makes them ideal for large signal, common source amplifier applications in 8 volt base station equipment. Guaranteed Performance @ 945 MHz, 8 Volts Output Power = 6 Watts Power Gain = 11.5 db Efficiency = 5% Characterized with Series Equivalent Large Signal D Impedance Parameters S Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling :1 VSWR @ 8 Vdc, 945 MHz G 6 W, 1. GHz LATERAL N CHANNEL BROADBAND RF POWER MOSFETs CASE 6B 1, STYLE 1 (MRF184) CASE 6C, STYLE 1 (MRF184S) MAXIMUM RATINGS S Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS ± Vdc Drain Current Continuous ID 7 Adc Total Device Dissipation @ TC = 7 C Derate above 7 C PD 118.9 Watts W/ C Storage Temperature Range Tstg 65 to +15 C Operating Junction Temperature TJ C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.1 C/W ELECTRICAL CHARACTERISTICS (TC = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage (VGS = V, ID = 1 Adc) Zero Gate Voltage Drain Current (VDS = 8 V, VGS = V) Gate Source Leakage Current (VGS = V, VDS = V) V(BR)DSS 65 Vdc IDSS 1 µadc IGSS 1 µadc NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV MOTOROLA Motorola, Inc. 1997 RF DEVICE DATA 1
ELECTRICAL CHARACTERISTICS continued (TC = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 4 Vdc (VDS = 1 V, ID = µa) Gate Quiescent Voltage (VDS = 8 V, ID = 1 ma) Drain Source On Voltage (VGS = 1 V, ID = A) Forward Transconductance (VDS = 1 V, ID = A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 8 V, VGS = V, f = 1 MHz) Output Capacitance (VDS = 8 V, VGS = V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 8 V, VGS = V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common Source Power Gain (VDD = 8 V, Pout = 6 W, f = 945 MHz, IDQ = 1 ma) Drain Efficiency (VDD = 8 V, Pout = 6 W, f = 945 MHz, IDQ = 1 ma) VGS(Q) 4 5 Vdc VDS(on).65.8 Vdc gfs..6 s Ciss 8 pf Coss 44 pf Crss 4. pf Gps 11.5 15 db η 5 6 % Load Mismatch (VDD = 8 V, Pout = 6 W, IDQ = 1 ma, f = 945 MHz, Load VSWR 5:1 at all Phase Angles) ψ No Degradation in Output Power VGG R1 R C5 R C6 C7 C8 C C9 L1 R4 B1 C1 C11 C1 C1 VDD RF INPUT TL1 C1 TL DUT TL C4 TL4 RF OUTPUT C B1 Short RF Bead Fair Rite 7419447 C1 18 pf Chip Capacitor C, C, C6, C9 4 pf Chip Capacitor C4 1 pf Chip Capacitor C5, C1 1 µf, 5 Vdc Electrolytic Capacitor C7, C1 1 pf Chip Capacitor C8, C11.1 µf, 5 Vdc Chip Capacitor C1 5 µf, 5 Vdc Electrolytic Capacitor L1 5 Turns, AWG, IDIA.16 R1 1 kω, 1/4 W Resistor R 1 kω, 1/4 W Resistor R 1. kω, 1/4 W Chip Resistor R4 4 x 9 Ω, 1/8 W Chip Resistor TL1 TL4 Microstrip Line See Photomaster Ckt Board 1/ Glass Teflon, εr =.55 ARLON GX 55 Figure 1. MRF184 Test Circuit Schematic
TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) 4 5 rd ORDER 6 VDD = 8 Vdc f1 = 945 MHz 7 f = 945.1 MHz IDQ = 4 ma 8 1 4 5 6 7 Pout, OUTPUT POWER (WATTS PEP) 5th 7th IMD, INTERMODULATION DISTORTION (dbc) 15 5 5 IDQ = 1 ma 5 ma 6 ma 45 VDD = 8 Vdc 4 ma f1 = 945 MHz f = 945.1 MHz 55.1 1 1 1 Pout, OUTPUT POWER (WATTS PEP) Figure. Intermodulation Distortion versus Output Power Figure. Intermodulation Distortion versus Output Power 18 8 16 Gpe, POWER GAIN (db) 16 14 IDQ = 6 ma 5 ma 1 ma 4 ma 1 1 1 1 Pout, OUTPUT POWER (WATTS) VDD = 8 Vdc f = 945 MHz Pout, OUTPUT POWER (WATTS) 7 6 5 4 Gpe Pout VDS = 8 Vdc 1 IDQ = 4 ma f = 945 MHz 14.5 1 1.5.5 Pin, INPUT POWER (WATTS) 15 Gpe, POWER GAIN (db) Figure 4. Power Gain versus Output Power Figure 5. Output Power versus Input Power Pout, OUTPUT POWER (WATTS) 1 9 8 7 6 5 4 Pin = 4. W. W 1. W 1 IDQ = 4 ma f = 945 MHz 1 14 16 18 4 6 8 VDD, SUPPLY VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) 8 7 6 5 4 TYPICAL DEVICE SHOWN VDS = 8 Vdc 1 Pin =. W f = 945 MHz.5 1 1.5.5.5 4 4.5 5 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Gate Voltage
TYPICAL CHARACTERISTICS 9 4 Pout, OUTPUT POWER (WATTS) 8 7 6 5 4 1 VDD = 8 Vdc IDQ = 4 ma SINGLE TONE Pin =.5 W 1. W.5 W 8 8 84 86 88 9 9 94 96 98 1 f, FREQUENCY (MHz) ID, DRAIN CURRENT (ma).5.5 TYPICAL DEVICE SHOWN 1.5 1 VDS = 8 Vdc.5 1 4 5 6 VGS, GATE VOLTAGE (VOLTS) Figure 8. Output Power versus Frequency Figure 9. Drain Current versus Gate Voltage C, CAPACITANCE (pf) 14 1 1 8 6 4 VGS = Vdc f = 1. MHz 5 1 15 5 5 4 45 5 VDS, DRAIN SOURCE VOLTAGE (VOLTS) Figure 1. Capacitance versus Voltage Ciss Coss Crss, DRAIN CURRENT (AMPS) ID 6 5.5 5 4.5 4.5.5 1.5 1 TJ = 15 C.5 TF = 7 C 5 1 15 5 5 VDS, DRAIN VOLTAGE (Vdc) Figure 11. DC Safe Operating Area ID, DRAIN CURRENT (AMPS) 7 6.5 6 5.5 5 4.5 4.5.5 1.5 1 TJ = 175 C.5 TF = 7 C 5 1 15 5 5 VDS, DRAIN VOLTAGE (Vdc) Gpe, POWER GAIN (db) 16 15.5 15 14.5 14 Gpe VDD = 8 Vdc 1.5 4 IDQ = 4 ma VSWR Pout = 6 W (CW) 1 5 88 9 9 94 96 98 f, FREQUENCY (MHz) η 65 6 55 5 45 η, EFFICIENCY (%) 1. 1.5..5 INPUT VSWR Figure 1. DC Safe Operating Area Figure 1. Performance in Broadband Circuit 4
P out, OUTPUT POWER (dbm) 6 5 4 1 1 FUNDAMENTAL rd ORDER VDS = 6 Vdc ID =.1 A f1 = 945 MHz f = 945.1 MHz 4 1 15 5 5 4 Pin, INPUT POWER (dbm) Figure 14. Class A Third Order Intercept Point R1 C1 R C5 R C8 C7 C6 C C9 L1 B1 R4 C11 C1 C1 C1 C4 TL TL TL1 TL4 C XRF184 Figure 15. Component Parts Layout 5
Zin f = 1 MHz 9 95 85 8 f = 1 MHz 95 9 Z = 1 Ω 85 8 ZOL* VDD = 8 Vdc, IDQ = 1 ma, Pout = 6 W f MHz Zin Ohms ZOL* Ohms 8.4 + j.9 1.85 j1. 85.45 + j1.1 1.75 j.9 9.5 + j1. 1.7 j.75 95.6 + j1. 1.6 j.5 1.7 + j1.8 1.57 j.4 Zin = Conjugate of source impedance. Zout = Conjugate of the load impedance at given output ZOL* = power, voltage, frequency and efficiency. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance 6
Table 1. Common Source S Parameters (VDS = 1.5 V) ID =. A f S11 S1 S1 S MHz S11 φ S1 φ S1 φ S φ.916 179 1.88 8.14.84 175.917 178 9.6 79.14 5.847 174 4.918 177 8.1 78.15 9.85 174 5.919 176 7.16 77.15.85 174 1.919 175 4.57 75.15 5.855 17 15.9 174.4 67.15 8.865 17.91 17.6 6.14 41.867 17 5.9 17.11 59.14 45.877 17.98 17 1.77 55.14 49.881 17 5.98 17 1.5 5.1 55.887 17 4.941 171 1.8 47.1 59.895 17 45.94 171 1.1 44.1 6.896 17 5.94 171 1. 41.1 68.898 17 55.945 171.91 8.1 75.899 17 6.947 171.8 5.1 79.9 17 65.948 171.71.9 85.95 17 7.955 17.65.8 88.99 17 75.959 17.6 8.8 95.919 17 8.96 169.55 5.7 1.9 17 85.96 169.5.7 111.9 171 9.964 169.45 1.7 118.96 171 95.968 169.4 19.6 15.99 171 1.97 169.9 18.6 19.9 171 15.971 168.6 17.5 14.95 171 11.97 168.4 14.5 14.96 17 115.97 168. 1.5 149.98 17 1.974 167.9 1.6 156.94 169 15.976 167.8 1.7 16.94 169 1.975 167.6 9.8 17.945 168 15.97 166.5 8.9 178.946 167 14.969 166.4 7.11 175.947 167 145.965 165. 6.1 17.948 167 15.959 164.1 5.1 169.95 167 7
Table. Common Source S Parameters (VDS = 8 V) ID =. A f S11 S1 S1 S MHz S11 φ S1 φ S1 φ S φ.91 17 16.1 84.16 1.746 178.917 17 1.7 8.15 15.755 177 4.918 174 1. 8.14 17.759 177 5.919 176 1.6 78.1.766 176 1.9 178 6.76 71.1.775 176 15.9 177 4.9 65.11 5.791 176.91 176.8 6.1 7.791 176 5.9 175.7 55.9 9.79 176.941 174.5 51.9 1.86 176 5.94 17.14 45.8 5.84 176 4.945 17 1.8 41.8 45.85 176 45.948 17 1.58 8.7 5.858 176 5.95 17 1.9 5.7 57.865 176 55.955 17 1.4.7 61.876 176 6.96 17 1.1 9.6 64.88 176 65.965 171.96 6.6 68.888 175 7.967 171.89 4.6 71.894 175 75.97 171.8.5 7.94 175 8.97 17.7 18.5 78.96 175 85.974 169.66 17.4 8.98 174 9.975 169.61 1.4 91.99 17 95.976 169.57 1.4 94.915 17 1.978 168.5 11.4 96.916 17 15.979 168.47 9.5 1.919 17 11.98 168.4 7.5 115.94 17 115.98 167.41 6.6 119.91 171 1.979 167.8 5.6 15.94 17 15.978 167.6.6 19.95 17 1.974 167.4 1.7 148.96 17 15.971 166..7 156.97 169 14.97 165.1 1.7 165.98 169 145.969 165..8 171.99 169 15.965 164.7.8 178.946 169 8
PACKAGE DIMENSIONS G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198.. CONTROLLING DIMENSION: INCH. B K H E D 1 N A F Q PL.5 (.1) M T A M B M C T SEATING PLANE CASE 6B 1 ISSUE O (MRF184) INCHES MILLIMETERS DIM MIN MAX MIN MAX A.79.81.7.57 B..4 5.59 6.9 C.15.175.18 4.45 D.5.5 5.1 5.71 E.5.7 1.7 1.77 F.4.6.11.15 G.56 BSC 14.7 BSC H.7.9 1.78.9 K.15.55 5.47 6.47 N.5.7 8.89 9.9 Q.1.14.5.55 STYLE 1: PIN 1. DRAIN. GATE. SOURCE B 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198.. CONTROLLING DIMENSION: INCH. H K E D N A F C T SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A.7.9 9.4 9.91 B..4 5.59 6.9 C.15.155.67.94 D.5.5 5.1 5.71 E.5.45.89 1.14 F.4.6.11.15 H.57.67 1.45 1.7 K.85.115.16.9 N.5.7 8.89 9.9 STYLE 1: PIN 1. DRAIN. GATE. SOURCE CASE 6C ISSUE B (MRF184S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4 1, P.O. Box 545, Denver, Colorado 817. 675 14 or 1 8 441 447 Nishi Gotanda, Shinagawa ku, Tokyo 141, Japan. 81 5487 8488 Mfax : RMFAX@email.sps.mot.com TOUCHTONE 6 44 669 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, US & Canada ONLY 1 8 774 1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85 66998 INTERNET: http://motorola.com/sps MRF184/D 9
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.