STPS2L3 Low drop power Schottky rectifier Features Low cost device with low drop forward voltage for less power dissipation Optimized conduction/reverse losses trade-off which lead to the highest yield in the applications Surface mount miniature packages Avalanche capability specified K A SMA STPS2L3A Description Single Schottky rectifier suited to switched mode power supplies and high frequency DC to DC converters, freewheel diode and integrated circuit latch up protection. Packaged in SMA and low profile SMA and SMB, this device is especially intended for use in parallel with MOSFETs in synchronous rectification. Table 1. Device summary K A SMB flat STPS2L3UF I F(AV) 2 A V RRM 3 V T j (max) 15 C V F (max).375 V K A SMA flat STPS2L3AF April 28 Rev 6 1/1 www.st.com 1
Characteristics STPS2L3 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 3 V SMA flat T L = 13 C δ =.5 I F(AV) Average forward current SMA T L = 12 C δ =.5 2 A SMB flat T L = 135 C δ =.5 I FSM Surge non repetitive forward current t p =1 ms sinusoidal 75 A P ARM Repetitive peak avalanche power t p = 1 µs Tj = 25 C 15 W T stg Storage temperature range -65 to + 15 C T j Operating junction temperature (1) 15 C 1. dptot --------------- 1 dtj Rth ( j a) condition to avoid thermal runaway for a diode on its own heatsink Table 3. Thermal resistance Symbol Parameter Value Unit SMA flat 2 R th(j-l) Junction to lead SMA 3 C/W SMB flat 15 Table 4. Static electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit I R (1) V F (1) Reverse leakage current Forward voltage drop T j = 25 C 2 µa V R = V RRM T j = 1 C 6 15 ma T j = 25 C 5 I F = 2 A T j = 125 C.325.375 V T j = 25 C.53 I F = 4 A T j = 125 C 3.51 1. Pulse test: t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 4 x I F(AV) + 68 I F 2 (RMS) 2/1
STPS2L3 Characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (δ =.5) SMA P (W) F(AV) 1.2 1.1 δ = 5.9.7.5.3 δ = δ = δ =.5 δ = 1 T I F(AV) (A) δ=tp/t tp 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.2 2. 1.8 1.6 1.4 1.2 I F(AV) (A) δ=tp/t R th(j-a) =12 C/W T tp R =Rth(j-l) th(j-a) SMA T amb( C) 25 5 75 1 125 15 Figure 3. Average forward current versus ambient temperature (δ =.5) SMB flat Figure 4. Average forward current versus ambient temperature (δ =.5) SMA flat 2.2 2. 1.8 1.6 1.4 1.2 I F(AV) (A) δ=tp/t R th(j-a) =12 C/W T tp R th(j-a) =Rth(j-l) T amb( C) SMB flat 25 5 75 1 125 15 I F(AV) (A) 2.2 2. 1.8 1.6 1.4 1.2 T δ=tp/t tp R th(j-a) =R th(j-l) SMA-Flat R th(j-a) =2 C/W T amb( C) 25 5 75 1 125 15 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values) SMA Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values) SMB flat 1 9 8 I (A) M SMA 3 25 I (A) M SMB flat (non exposed pad) 7 6 5 4 3 2 1 IM t δ=.5 t(s) T a=25 C T a=75 C T a=125 C 1.E-3 1.E-2 1.E-1 1.E+ 2 15 1 5 IM t δ=.5 t(s) T L=25 C T L=75 C T L=125 C 1.E-3 1.E-2 1.E-1 1.E+ 3/1
Characteristics STPS2L3 Figure 7. 8 7 6 I (A) M Non repetitive surge peak forward current versus overload duration (maximum values) SMA flat SMA-Flat Figure 8. 1 P ARM(t p) P ARM(1µs) Normalized avalanche power derating versus pulse duration 5 4 T a =25 C 3 2 1 IM t δ =.5 T a=75 C T a=125 C t(s) 1 1.E-3 1.E-2 1.E-1 1.E+ 1 1 1 t p(µs) 1 1 1 Figure 9. Normalized avalanche power derating versus junction temperature Figure 1. Relative variation of thermal impedance, junction to ambient, versus pulse duration - SMA 1.2 P ARM(T) j P ARM(25 C).9 Z th(j-a) /Rth(j-a) SMA 1.7 T ( C) j 25 5 75 1 125 15.5.3 Single pulse t (s) p δ=tp/t 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 T tp Figure 11. Relative variation of thermal impedance junction to lead versus pulse duration - SMB flat Figure 12. Relative variation of thermal impedance junction to ambient versus pulse duration - SMA flat.9.7.5.3 Z th(j-l) /Rth(j-l) SMB flat.9.7.5.3 Z th(j-a) /Rth(j-a) SMA-Flat Single pulse t (s) p 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 Single pulse t (s) p 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 4/1
STPS2L3 Characteristics Figure 13. Reverse leakage current versus reverse voltage applied (typical values) Figure 14. Junction capacitance versus reverse voltage applied (typical values) 1.E+2 1.E+1 I (ma) R T j=15 C T j=125 C 1 C(pF) F=1MHz V OSC=3mVRMS T j=25 C T j=1 C 1.E+ 1 1.E-1 1.E-2 T j=25 C 1.E-3 V (V) R 5 1 15 2 25 3 1 V (V) R 1 1 1 Figure 15. Forward voltage drop versus forward current (high level) Figure 16. Forward voltage drop versus forward current ( low level) I FM(A) 1 I FM(A) 3. 2.5 T j =125 C (maximum values) 2. T j=125 C (maximum values) 1.5 T j =125 C (typical values) T j=25 C (maximum values) V FM(V).3.5.7 T j=125 C (typical values).5 V FM(V) T j=25 C (maximum values).3.5 Figure 17. Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed board FR4, copper thickness = 35 µm) (SMA, SMB flat) Figure 18. Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed board FR4, copper thickness = 35 µm) (SMA flat) R th(j-a) ( C/W) 13 12 11 1 9 SMA 8 7 6 5 4 3 2 1 SMB flat) S CU(Cm²).5 1.5 2. 2.5 3. 3.5 4. 4.5 5. R th(j-a) ( C/W) 2 18 16 14 12 1 8 6 4 2 S CU(Cm²) SMA-Flat.5 1.5 2. 2.5 3. 3.5 4. 4.5 5. 5/1
Package Information STPS2L3 2 Package Information Epoxy meets UL94, V In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 5. SMA dimensions Dimensions E1 Ref. Millimeters Inches Min. Max. Min. Max. D A1 1.9 2.45 75 94 A2 5 2 8 b 1.25 1.65 49 65 E c 5 6 16 A1 D 2.25 2.9 89 14 C L A2 b E 4.8 5.35 89 11 E1 3.95 4.6 56 81 L.75 1.5 3 59 Figure 19. SMA footprint (dimensions in mm) 1.4 2.63 1.4 1.64 5.43 6/1
STPS2L3 Package Information Table 6. SMA flat (non exposed pad) dimensions Dimensions Ref. Millimeters Inches E E1 D b A L 2x L c L1 2x L2 2x Min. Typ. Max. Min. Typ. Max. A.9 1.1 35 43 b 1.25 1.65 49 65 c 5 6 16 D 2.25 2.95 88 16 E 4.8 5.6 89 2 E1 3.95 4.6 56 81 L.75 1.5 3 59 L1.5 19 L2.5 19 Figure 2. SMA flat (non exposed pad) footprint dimensions 5.52 (17) 1.52 (6) 1.2 (47) 3.12 (23) 1.2 (47) millimeters (inches) 7/1
Package Information STPS2L3 Table 7. SMB flat dimensions Dimensions Ref. Millimeters Inches E E1 D b A L L c L2 L1 Min. Typ. Max. Min. Typ. Max. A.9 1.1 35 43 b (1) 1.95 2.2 77 87 c (1) 5 6 16 D 3.3 3.95 3 56 E 5.1 5.6 2 E1 4.5 4.6 89 81 L.75 1.5 29 59 L1 16 L2 24 1. Applies to plated leads Figure 21. SMB flat footprint (dimensions in mm) 5.84 2.7 1.2 3.44 1.2 8/1
STPS2L3 Ordering information 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS2L3A G3 SMA 68 g 5 Tape and reel STPS2L3UF FG3 SMB flat 5 g 5 Tape and reel STPS2L3AF F3 SMA flat 35 g 1 Tape and reel 4 Revision history Table 9. Document revision history Date Revision Changes Jul-23 3A Last update. Aug-24 4 31-Jan-27 5 SMA package dimensions update. Reference A1 max. changed from 2.7mm (6inc.) to 2.3mm (8). Reformatted to current standard. Added ECOPACK statement. Added SMB flat package. 23-Apr-28 6 Reformatted to current standards. Added SMA flat package. 9/1
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