Characterization and Variation Modeling for 22FDX. Ning Jin Digital Design Methodology Team

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Characterization and Variation Modeling for 22FDX Ning Jin Digital Design Methodology Team

Agenda 1 2 3 4 Introduction to 22FDX Technology Library Characterization in Liberate and Variety Library Characterization Qualification Conclusion 2

Agenda 1 2 3 4 Introduction to 22FDX Technology Library Characterization in Liberate and Variety Library Characterization Qualification Conclusion 3

22FDX Technology Bulk versus FDSOI What is 22FDX technology? It is the new 22nm Fully Depleted Silicon-on-Insulator (FDSOI) technology from GLOBALFOUNDRIES Advantages: Lower Leakage due to insulator layer Enables Body Bias (BB) with minimal leakage impact FDSOI variability is smaller across die due to lower doping effort Planar Bulk Transistor Planar FDSOI Transistor with green Insulator layer Effects of Body Biasing in Bulk Transistor and FDSOI Transistor

22FDX Technology Bulk versus FDSOI Bias voltage is applied to P-well and N-well Reverse Body Bias (RBB) nmos neg. substrate voltage, pmos pos. substrate voltage raising VT of these devices Forward Body Bias (FBB) nmos pos. substrate voltage, pmos neg. substrate voltage lowering VT of these devices flipped well

22FDX Body Biasing Power/Performance Trade-off Leakage Power Maximum Performance Operating Mode Forward Body-bias (FBB) FDSOI: Fully Depleted Silicon-on-Insulator -2V to +2V Body-Biasing Reverse Body-bias (RBB) Minimum Leakage in Standby Mode Max Frequency FBB and RBB are different devices

22FDX Library Characterization Body-Biasing Related Attributes Voltage map: Supply voltages on N-Well and P-Well needs to be updated voltage_map (VDD, XX); voltage_map (VNW_N, 1); voltage_map (VPW_P, -2); voltage_map (VSS, 0); Power pins: Pin definitions for N-Well and P-Well needs to be specified Body bias constructs added in power down function pg_pin (VNW_N) { pg_type : nwell; physical_connection : device_layer; voltage_name : "VNW_N"; } pg_pin (VPW_P) { pg_type : pwell; physical_connection : device_layer; voltage_name : "VPW_P"; } GLOBALFOUNDRIES Confidential 7

Effect of Random Device Variability Delay variability (including CLK-to-Q delay) The delay varies for each cell/edge (rise vs fall)/type (early vs late) The delay varies based on the active arc/input transition/output load Constraints variability (Setup and Hold) The constraints vary based on the slew on both Data_pin and CLK_pin Output transition The output transition can vary with input transition and output load

Evolution of Design Margining Methodologies Different Design Margining Methodologies: Global flat derate On-Chip Variation (OCV) Table based granular derates Advanced OCV (AOCV) Statistical approach Statistical OCV (SOCV) SOCV with slew/load dependency Liberty Variation Format (LVF) ocv_sigma_cell_rise (delay_template_7x7) { sigma_type : early; Which method to use? Understand "0.00136, 0.00138, the accuracy/cost 0.00146, 0.00160, 0.00178, tradeoff ", \ "0.0276, 0.0276, 0.0276, 0.0276, 0.0276, " \ Depends on technology node and variation trend } ocv_sigma_cell_rise Depends on (delay_template_7x7) design margin { headroom } index_1 ("0.0020, 0.0050, 0.0100, 0.0190, "); index_2 ("0.0005, 0.0015, 0.0040, 0.0100, "); values ( \ );... sigma_type : late; index_1 ("0.0020, 0.0050, 0.0100, 0.0190, "); index_2 ("0.0005, 0.0015, 0.0040, 0.0100, "); values ( \ "0.00136, 0.00138, 0.00144, 0.00160, 0.00178, ", \... "0.02764, 0.02768, 0.02768, 0.02767, 0.02760, " \ ); VARIATION in LVF Pessimism Reduction OCV 90nm and above AOCV 65nm and below SOCV/LVF 14nm and below 9

Agenda 1 2 3 4 Introduction to 22FDX Technology Library Characterization in Liberate and Variety Library Characterization Qualification Conclusion 10

Liberate Characterization Suite Liberate enables characterization of advanced timing, and noise models (CCS, CCSN) Variety enabling accurate on chip variation analysis and timing signoff with LVF modeling Complete characterization solution covering memories with Liberate MX and mixed signal blocks with Liberate AMS Custom Logic Datapath Analog Clocking Standard Cell Pretty pics ROM SRAM Custom logic, I/O cells

Liberate Solution Standard/custom cell characterization Foundation IP characterization Full distribution per arc Autonomous clients reduce network traffic, provide linear speed-up per CPU Multiple views Liberty with CCS or ECSM for timing, noise, power Verilog/Vital Datasheet (html, pdf), custom API Fast and automated Inside View approach to create vectors and function for digital cells Re-characterize from existing library Native API (SKI) integration with Spectre simulator for 2-3X performance improvement over standalone SPICE 12

Variety Process variation modeling Create SSTA, sigma variation tables for LVF libraries, or constraint margins (hold time) Calculate delay sensitivity to global and local variation Avoids costly Monte-Carlo runs Fully distributed, multi-threaded AOCV/SOCV table generation AOCV: User-controlled path length, interconnect, slew, load, fanout SOCV: Tempus format, arc/slew/load/when dependent sigma factor in a side file AOCV, SOCV, LVF Enables reduced timing margins so you can tape out sooner with lower power! 13

Variety LVF Characterizes delay, slew and constraint sigmas for every input transition, output load and timing arc Early and late sigmas are modeled separately Each statistical parameter from variation mode is modeled independently GLOBALFOUNDRIES technology models variation with 3 independent parameters Generates a sensitivity file which is a LVF format only.lib Sensitivity file can be read by Liberate and merged with a Liberate ldb or an existing.lib Parameter variations read_library nominal.lib write_library -sensitivity sens.lib lvf.lib Variety Sensitivity file (LVF) Common Tcl (define_cell, define_arc etc) Liberate Liberate Nominal.lib LVF.lib 14

Agenda 1 2 3 4 Introduction to 22FDX Technology Library Characterization in Liberate and Variety Library Variation Characterization Qualification Solutions Conclusion 15

Library Characterization Qualification Experiment Setup Liberty file with NLDM + CCSTN data NLDM + CCSTN recharacterization in Liberate Implementation of ARM Cortex -A9 Processor Using baseline library Static Timing analysis in Tempus Compare STA results against SPICE simulation to verify accuracy 16

Tempus Correlation Experiments Baseline Library Correlation Results Baseline STA to Spectre Correlation 1.50% 1.00% 0.50% % Difference 0.00% -0.50% 0 5 10 15 20 25 SPICE STA -1.00% -1.50% Path ID Static timing analysis for 25 paths shows an average absolute difference of 0.51% against SPICE simulations 17

Variation Characterization Qualification Experiment setup Liberty file with NLDM + CCSTN data Characterize LVF with MonteCarlo compare libs Characterize LVF using Sensitivity Base Analysis Verify accuracy of sensitivity analysis against reference MonteCarlo Compare LVF characterization runtime against NLDM+CCSTN Implement ARM Cortex -A9 Processor Timing analysis in Tempus Compare STA results against SPICE simulation to verify accuracy 18

Variation Characterization Qualification Library Level Accuracy Evaluation Experiment Compare LVF accuracy from sensitivity based analysis and MonteCarlo simulations Based on the entire GLOBALFOUNDRIES 22FDX library cells Library consisting of 102 cells Reduced 2X2 input transition/output load tables are used LVF Liberty File Using MonteCarlo LVF Liberty File Using sensitivity based analysis compare_library 19

Variation Characterization Qualification Library Level Accuracy Evaluation Results Delay sigma correlation Delay sigma tolerance: 5%, 2ps Pass rate: 98.74% Average difference: 0.371ps Average difference %: 0.55% 20

Variation Characterization Qualification Library Level Accuracy Evaluation Results Slew sigma correlation Delay sigma tolerance: 5%, 2ps Pass rate: 98.77% Average difference: 0.349ps Average difference %: 0.96% 21

Variation Characterization Qualification Library Level Runtime Evaluation Experiment and Results Based on the entire GLOBALFOUNDRIES 22FDX library cells Library consisting of 102 cells Full 9X9 input transition/output load tables are used 3 independent process variation parameters NLDM/NLPM/CCST/CCS- Noise Library Generation 1.63 hours 50 CPUs < 1X runtime Add-On Flow for LVF using Sensitivity Based Analysis 1.31 hours 22

Tempus Correlation Experiments LVF Library Correlation Setup Implementation of ARM Cortex -A9 Processor Using baseline library Static Timing Analysis in Tempus Using baseline library with LVF add-on SPICE MonteCarlo simulations (Golden Reference) (µ+3σ) calculated for setup Compare 23

Tempus Correlation Experiments LVF Library Correlation Results Setup MonteCarlo-based STA to SPICE Correlation 4% 2% 0% 0 5 10 15 20 25 % Difference -2% -4% -6% STA(µ+3σ) SPICE(µ+3σ) SPICE(µ) -8% -10% -12% Path ID Static timing analysis for 25 paths shows an average absolute difference of -1.30% against SPICE simulations 24

Agenda 1 2 3 4 Introduction to 22FDX Technology Library Characterization in Liberate and Variety Library Variation Characterization Solutions What Conclusion is Next 25

Conclusion GLOBALFOUNDRIES 22FDX technology introduces body bias as an added characterization variable. Liberate library characterization tool models 22FDX libraries with necessary attributes and shows close correlation with SPICE simulations. Variety delay/slew variation characterization is qualified against SPICE and Monte Carlo. The runtime is fast with good balance of accuracy. 26

Next Step We are working on tightening hold variation correlation with MonteCarlo simulations in Variety. Setup variation characterization support using MC method came out recently in Variety. We will start testing out the new features and incorporate them into our flow. 27

Acknowledgement GLOBALFOUNDRIES Design Methodology Team Tamer Ragheb Ramya Srinivasan Sumanth Prakash

Thank you Disclaimer The information contained herein [is confidential and] is the property of GLOBALFOUNDRIES and/or its licensors. This document is for informational purposes only, is current only as of the date of publication and is subject to change by GLOBALFOUNDRIES at any time without notice. GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. Other product or service names are for identification purposes only and may be trademarks or service marks of their respective owners. GLOBALFOUNDRIES Inc. 2016. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.