FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 0.2 A, 600 V, R DS(on) =9.3 Ω(.)@ =10 V, =0.1 A Low Gate Charge (Typ. nc) Low C rss (Typ. pf) 100% Avalanche Tested RoHS Compliant D D S G G SOT-223 S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter FQT1N60C Unit S Drain to Source Voltage 600 V S Gate to Source Voltage ±30 V Drain Current Thermal Characteristics -Continuous (T C = 25 o C) 0.2 -Continuous (T C = 100 o C) 0.12 M Drain Current - Pulsed (Note 1) 0.8 A E AS Single Pulsed Avalanche Energy (Note 2) 33 mj I AR Avalanche Current (Note 1) 0.2 A E AR Repetitive Avalanche Energy (Note 1) 0.2 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 o C) 2.1 W - Derate above 25 o C 0.02 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +150 o C T L Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds 300 o C Symbol Parameter Min. Max. Unit R θja Thermal Resistance, Junction to Ambient* - 60 o C/W * When mounted on the minimum pad size recommended (PCB Mount) A 2007 Semiconductor Components Industries, LLC. October-2017,Rev. 3 Publication Order Number: FQT1N60C/D
Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT-223 330mm 12mm 4000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain to Source Breakdown Voltage = 250µA, = 0V, T J = 25 o C 600 - - V BS Breakdown Voltage Temperature I / T J Coefficient D = 250µA, Referenced to 25 o C - 0.6 - V/ o C = 600V, = 0V - - 25 SS Zero Gate Voltage Drain Current µa = 480V, T C = 125 o C - - 250 I GSS Gate to Body Leakage Current = ±30V, = 0V - - ±100 na On Characteristics (th) Gate Threshold Voltage =, = 250µA 2.0-4.0 V R DS(on) Static Drain to Source On Resistance = 10V, = 0.1A - 9.3 11.5 Ω g FS Forward Transconductance = 40V, = 0.1A (Note 4) - 0.75 - S Dynamic Characteristics C iss Input Capacitance - 130 170 pf = 25V, = 0V C oss Output Capacitance - 19 25 pf f = 1MHz C rss Reverse Transfer Capacitance - 3.5 6 pf Q g Total Gate Charge at 10V - 4.8 6.2 nc Q = 480V, = 1A gs Gate to Source Gate Charge - 0.7 - nc = 10V Q gd Gate to Drain Miller Charge (Note 4, 5) - 2.7 - nc Switching Characteristics t d(on) Turn-On Delay Time - 7 24 ns t r Turn-On Rise Time V DD = 300V, = 1A - 21 52 ns t d(off) Turn-Off Delay Time R G = 25Ω - 13 36 ns t f Turn-Off Fall Time (Note 4, 5) - 27 64 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A V SD Drain to Source Diode Forward Voltage = 0V, I SD = 0.2A - - 1.4 V t rr Reverse Recovery Time = 0V, I SD = 1A - 190 - ns Q rr Reverse Recovery Charge di F /dt = 100A/µs (Note 4) - 0.53 - µc Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 59mH, I AS = 1.1A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 0.2A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test: Pulse width 300µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics Figure 1. On-Region Characteristics 10 0 10-2 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 0 10 1, Drain-Source Voltage [V] 1. 250µs Pulse Test 2. T C = 25 Figure 2. Transfer Characteristics 10 0 150 o C 25 o C -55 o C 1. = 40V 2. 250µ s Pulse Test 2 4 6 8 10, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature R DS(ON) [Ω ], Drain-Source On-Resistance 30 25 20 15 10 5 = 10V 0 0.0 0.5 1.0 1.5 2.0 2.5 = 20V Note : T = 25 J R, Reverse Drain Current [A] 10 0 150 25 Notes : 1. = 0V 2. 250µ s Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-Drain voltage [V] Capacitance [pf] Figure 5. Capacitance Characteristics 250 200 150 100 50 C iss C oss C rss 0 10 0 10 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 Figure 6. Gate Charge Characteristics = 120V = 300V = 480V Note : I = 1A D 0 0 1 2 3 4 5 6 Q G, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. = 0 V 2. = 250 µa R DS(ON), (Normalized) Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 0.1 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 10 0 10-2 10-3 Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 ms 100 µs 1 ms 10 0 10 1 10 2 10 3, Drain-Source Voltage [V] 1 s DC 10 ms 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 Figure 10. Maximum Drain Current vs. Case Temperature 0.00 25 50 75 100 125 150 T C, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 2 D=0.5 Z θ JC (t), Thermal Response 10 1 10 0 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 60 /W M ax. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 0 10 1 10 2 10 3 t 1, Square W ave Pulse Duration [sec] 4
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + V D S _ I S D L D r iv e r R G S a m e T y p e a s D U T V D D V G S d v / d t c o n t r o lle d b y R G I S D c o n t r o lle d b y p u ls e p e r io d V G S ( D riv e r ) G a t e P u ls e W id t h D = -------------------------- G a t e P u ls e P e r io d 1 0 V I F M, B o d y D io d e F o r w a r d C u r r e n t I S D ( D U T ) d i/ d t I R M B o d y D io d e R e v e r s e C u r r e n t V D S ( D U T ) B o d y D io d e R e c o v e r y d v / d t V S D V D D B o d y D io d e F o r w a r d V o lt a g e D r o p 6
Mechanical Dimensions 3.00 ±0.10 SOT-223 MAX1.80 0.08MAX 0.65 ±0.20 3.50 ±0.20 1.75 ±0.20 (0.60) (0.60) 0.06 +0.04 0.02 7.00 ±0.30 2.30 TYP 4.60 ±0.25 0.70 ±0.10 (0.95) (0.95) 0.25 +0.10 0.05 0 ~10 1.60 ±0.20 (0.46) (0.89) 6.50 ±0.20 7
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