TIP120, 121, 122, 125, 126, 127

Similar documents
Darlington Transistors

Darlington Transistors

BDW93C, BDW94C Series

TIP120, 121, 122, 125, 126, 127 Darlington Transistors

Darlington Transistor TO-3

2N6054/2N6056 Darlington Transistors

2N6668 Darlington Power Transistor

MJ15003, MJ A Complementary Power Transistors

MJ11032, Darlington Power Transistors

BU426A Power Transistor

MJ15022 / MJ15024 Power Transistors

MJE13005 Power Transistor

2N4401 & 2N4403 General Purpose Switching Transistors

BUV48A Power Transistor

2N2222A High Speed Switching Transistor

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

TIP120, TIP121, TIP122,

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1.

BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS

DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage

Dual General Purpose Transistors

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

7X = Device Marking. Symbol

MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

Obsolete Product(s) - Obsolete Product(s)

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors

2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description

Adc. W W/ C T J, T stg 65 to C

Dual Bias Resistor Transistors

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ21195 PNP MJ21196 NPN

2N3055A MJ AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

MJE243 - NPN, MJE253 - PNP

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

UNISONIC TECHNOLOGIES CO., LTD

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MMBT3904. REVERSE VOLTAGE 60 Volts FORWARD CURRENT 0.2 Amperes NPN GENERAL PURPOSE TRANSISTOR SOT-23

UNISONIC TECHNOLOGIES CO., LTD MPSA92/93

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW

MJD44H11 (NPN) MJD45H11 (PNP)

MUN5311DW1T1G Series.

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS

MBR10xCT Series TO-220AB

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

TIP2955 PNP SILICON POWER TRANSISTOR

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858

NSTB1002DXV5T1G, NSTB1002DXV5T5G

Obsolete Product(s) - Obsolete Product(s)

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications

2N3771, 2N3772. High Power NPN Silicon Power Transistors. 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS

High Power 6W LED. Package Dimensions: Features: Applications: Absolute Maximum Ratings at Ta=25 C.

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

NPN Silicon Planar High Voltage Transistor

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

UMC2NT1, UMC3NT1, UMC5NT1

2N3771, 2N and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS

Transcription:

Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage - V CE (sat) = 2 V (maximum) at I C = 3 A Monolithic construction with built-in-base-emitter shunt resistors TO - 220 Application: Designed for general-purpose amplifier and low speed switching applications Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.2 2.97 L 0.33 5 M 2.48 2.98 O 3.7 3.9 Dimensions : Millimetres Maximum Ratings Characteristic Symbol TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Unit Collector - emitter voltage V CEO V 60 80 100 Collector - base voltage V CBO V Emitter - base voltage V EBO 5 V Collector current - continuous - peak I 5 C A 8 Base current I B 120 A Total power dissipation at T c = 25 C derate above 25 C Operating and storage Junction temperature range P D 65 2 W W/ C T j, T stg -65 to +150 C Page <1> 13/12/11 V1.1

Thermal Characteristics Characteristic Symbol Maximum Unit Thermal resistance junction to case R θjc 1.92 C/W Figure - 1 Power Derating P D, Power Dissipation (watts) T C, Temperature ( C) Electrical Characteristics (Tc = 25 C Unless Otherwise noted) Characteristics Symbol Minimum Maximum Units Off Characteristics Collector - emitter sustaining voltage (1) (I C = 30 ma, I B = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 (V CE = 30 V, I B = 0) TIP120, TIP125 (V CE = 40 V, I B = 0) TIP121, TIP126 (V CE = 50 V, I B = 0) TIP122, TIP127 (V CB = 60 V, I B = 0) TIP120, TIP125 (V CB = 80 V, I B = 0) TIP121, TIP126 (V CB = 100 V, I B = 0) TIP122, TIP127 (V EB = 5 V, I C = 0) V CEO (SUS) 60 80 100 I CEO - I CBO - - V ma ma I EBO - 2 ma On Characteristics (1) DC current gain (I C = A; V CE = 3 V) (I C = 3 A; V CE = 3 V) Collector - emitter saturation voltage (I C = 3 A; I B = 12 ma) (I C = 5 A; I B = 20 ma) Base-emitter on voltage (I C = 3 A; V CE = 3 V) h FE 1,000 1,000 V CE(sat) - 2 4 - - V BE (on) - 2.5 V V Page <2> 13/12/11 V1.1

Electrical Characteristics (Tc = 25 C Unless Otherwise noted) Dynamic characteristics Characteristics Symbol Minimum Maximum Units Small signal current gain (I C = 3 A; V CE = 4 V, f = 1 MHz) h fe 4 - - Output capacitance (V CB = 10 V; I E = 0, f = 0.1 MHz) TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 (1) Pulse test: Pulse width = 300 µs, duty cycle 2% Internal Schematic Diagram C ob - 300 200 pf NPN TIP120 TIP121 TIP122 PNP TIP125 TIP126 TIP127 Figure-2 Switching Time Figure-3 Switching Time t, Time (µs) t, Time (µs) Figure-4 Small Signal Current Gain Figure-5 Capacitances h FE, Small Signal Current Gain C, Capacitance (pf) f, Frequency (khz) V R, Reverse Voltage (Volts) Page <3> 13/12/11 V1.1

Figure-6 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I c -V CE limits of the transistor that must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 is based on T J(PK) = 150 C;T c is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(PK) =150 C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. V CE, Collector Emitter Voltage (Volts) Figure-7 DC Current Gain V CE, Collector Emitter Voltage (Volts) h FE, DC Current Gain Figure-8 Collector Saturation Region I B, Base Current (ma) h FE, DC Current Gain V CE, Collector Emitter Voltage (Volts) I B, Base Current (ma) Page <4> 13/12/11 V1.1

Figure-9 ON Voltages V, Voltage (Volts) V, Voltage (Volts) Specifications Table I C A V CEO maximum V h FE maximum at I C = 3 A P tot at 25 C (W) NPN Part Number PNP 60 TIP120 TIP125 5 80 1,000 65 TIP121 TIP126 100 TIP122 TIP127 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc 2011. Page <5> 13/12/11 V1.1