Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Low thermal resistance Avalanche capability specified Description This dual center tap Schottky rectifier is suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB, D 2 PA and I 2 PA, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Table 1. Device summary I F(AV) 2 x 15 A V RRM 30 V T j (max) 150 C V F (typ) 0.37 V Figure 1. TO-220AB STPS30L30CT V I I 2 PA STPS30L30CR Electrical characteristics (a) 2 x I O I D 2 PA STPS30L30CG "Forward" X I F V RRM V AR V R I O I R X V VTo V F(Io) V F V F(2xIo) "Reverse" I AR a. V ARM and I ARM must respect the reverse safe operating area defined in Figure 12 V AR and I AR are pulse measurements (t p < 1 µs). V R, I R, V RRM and V F, are static characteristics April 2010 Doc ID 5506 Rev 6 1/9 www.st.com 9
Characteristics STPS30L30C 1 Characteristics Table 2. Absolute ratings (limiting values per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 30 V I F(RMS) Forward rms current 30 A I F(AV) Average forward current δ = 0.5 T c = 140 C, Per diode Per device I FSM Surge non repetitive forward current t p = 10 ms sinusoidal, 220 A I RRM Peak repetitive reverse current t p = 2 µs square, F= 1 khz square 1 A I RSM Non repetitive peak reverse current t p = 100 µs square 3 A (1) P ARM Repetitive peak avalanche power t p = 1 µs T j = 25 C 5300 W V ARM (2) V ASM (2) Maximum repetitive peak avalanche voltage Maximum single pulse peak avalanche voltage t p < 1 µs T j < 150 C I AR < 35 A t p < 1 µs T j < 150 C I AR < 35 A To evaluate the conduction losses use the following equation: P = 0.24 x I F(AV) + 0.009 x I 2 F (RMS) 15 30 A 45 V 45 V T stg Storage temperature range -65 to + 175 C T j Maximum operating junction temperature (3) 150 C dv/dt Critical rate of rise of reverse voltage 10000 V/µs 1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 12 dptot 3. --------------- < 1 condition to avoid thermal runaway for a diode on its own heatsink dtj Rth ------------------------- ( j a) Table 3. Thermal resistance (1) Symbol Parameter Value Unit R th(j-c) Junction to case Per diode Total R th(c) Coupling 0.1 1.5 0.8 C/W 1. When the diodes 1 and 2 are used simultaneously: Δ T j (diode 1) = P(diode1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) V F (1) Reverse leakage current Forward voltage drop 1. Pulse test: t p = 380 µs, δ < 2% T j = 25 C 1.5 ma V R = V RRM T j = 125 C 170 350 ma T j = 25 C 0.46 I F = 15 A T j = 125 C 0.33 0.37 V T j = 25 C 0.57 I F = 30A T j = 125 C 0.43 0.5 2/9 Doc ID 5506 Rev 6
Characteristics Figure 2. Average forward power dissipation versus average forward current (per diode) Figure 3. Average forward current per diode versus ambient temperature (δ = 0.5) PF(av)(W) 10 9 δ = 0.1 δ = 0.2 δ = 0.5 8 δ = 0.05 7 6 δ = 1 5 4 3 T 2 1 IF(av) (A) δ=tp/t tp 0 0 2 4 6 8 10 12 14 16 18 20 IF(av)(A) 16 14 12 10 8 6 4 2 T Rth(j-a)=Rth(j-c) Rth(j-a)=15 C/W Rth(j-a)=50 C/W δ=tp/t tp Tamb( C) 0 0 25 50 75 100 125 150 Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus junction temperature P ARM(t p) P ARM(1µs) 1 P ARM(T j) P ARM(25 C) 1.2 1 0.1 0.8 0.6 0.01 0.4 t p(µs) 0.001 0 0.01 0.1 1 10 100 1000 0.2 T ( C) j 25 50 75 100 125 150 Figure 6. Non repetitive surge peak forward current versus overload duration, (maximum values per diode) Figure 7. Relative variation of thermal impedance junction to case versus pulse duration 250 IM(A) 225 200 175 150 125 100 Tc=25 C Tc=75 C 75 Tc=110 C 50 IM t 25 δ=0.5 t(s) 0 1E-3 1E-2 1E-1 1E+0 1.0 0.8 0.6 0.4 0.2 Zth(j-c)/Rth(j-c) δ = 0.5 δ = 0.2 T δ = 0.1 tp(s) δ=tp/t tp Single pulse 0.0 1E-4 1E-3 1E-2 1E-1 1E+0 Doc ID 5506 Rev 6 3/9
Characteristics STPS30L30C Figure 8. Reverse leakage current versus reverse voltage applied (typical values per diode) Figure 9. Junction capacitance versus reverse voltage applied (typical values per diode) IR(mA) 1E+3 1E+2 Tj=150 C 5.0 C(nF) F=1MHz Tj=25 C 1E+1 Tj=125 C 1.0 1E+0 1E-1 Tj=25 C VR(V) 1E-2 0 5 10 15 20 25 30 VR(V) 0.1 1 2 5 10 20 50 Figure 10. Forward voltage drop versus forward current (maximum values per diode) Figure 11. Thermal resistance junction to ambient versus copper surface under tab IFM(A) 200 100 10 Tj=15 0 C (typical values) Tj=12 5 C Tj=25 C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Rth(j-a) ( C/W) 80 70 Epoxy printed circuit board, copper thickness = 35 µm D 2 PA 60 50 40 30 20 10 S(Cu) (cm²) 0 0 4 8 12 16 20 24 28 32 36 40 Figure 12. Reverse safe operating area (t p < 1 µs and T j < 150 C) Iarm (A) 55 50 45 Forbidden area 40 35 30 Operating area 25 Varm (V) 20 30 35 40 45 50 55 60 4/9 Doc ID 5506 Rev 6
Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPAC packages, depending on their level of environmental compliance. ECOPAC specifications, grade definitions and product status are available at: www.st.com. ECOPAC is an ST trademark. Table 5. TO-220AB dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 H2 Dia L5 C A L7 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 L2 F2 L6 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 F1 L9 D G1 2.40 2.70 0.094 0.106 F L4 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. G1 G M E L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Diam. 3.75 3.85 0.147 0.151 Doc ID 5506 Rev 6 5/9
Package information STPS30L30C Mounting (soldering) the I 2 PA metal slug (heatsink) with alloy, like a surface mount device, IS NOT PERMITTED. A standard through-hole mounting is mandatory. Table 6. I 2 PA dimensions Dimensions Ref. Millimeters Inches L2 E c2 A Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.035 D b1 1.14 1.70 0.044 0.067 c 0.49 0.70 0.019 0.028 L L1 b1 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e e1 b c e1 4.95 5.15 0.195 0.203 E 10 10.40 0.394 0.409 L 13 14 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 6/9 Doc ID 5506 Rev 6
Package information Table 7. D 2 PA dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. L2 E C2 A A 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 L D B2 1.14 1.70 0.045 0.067 L3 B2 B C R C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 G E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 M * V2 * FLAT ZONE NO LESS THAN 2mm L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R 0.40 typ. 0.016 typ. V2 0 8 0 8 Figure 13. D 2 PA footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 3.70 Doc ID 5506 Rev 6 7/9
Ordering information STPS30L30C 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS30L30CT STPS30L30CT TO-220AB 2.0 g 50 Tube STPS30L30CG STPS30L30CR D 2 PA 1.8 g 50 Tube STPS30L30CG-TR STPS30L30CG D 2 PA 1.8 g 1000 Tape and reel STPS30L30CG-TR STPS30L30CG I 2 PA 1.49 g 50 Tube 4 Revision history Table 9. Document revision history Date Revision Changes Jul-2003 5C Previous issue 29-Apr-2010 6 Added Figure 1 and Figure 12. Added parameters V ARM and V ASM to Table 2. 8/9 Doc ID 5506 Rev 6
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