Infineon RF Power LDMOS Product Roadmap June, 2012
The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Rugged, Wideband Performance Manufacturing xbt Leading-edge RF Performance Highest power density Excellent efficiency Lowers the amplitude of the gain spike. Space efficient Outstanding DPD performance due to improved impedance State-of-the-art Infineon LDMOS Fab, Regensburg, Germany Excellent linearity Enhanced DPD performance at high IB Robust transistors Thin die technology Lowers BB parasitics Enables high VBW Available for these package styles: characteristics at baseband Very high IBW Rugged Fully automated assembly and test production facility in Morgan Hill, CA, USA Low thermal resistance High RF consistency High reliability 275 (PP) 288 (SE, PP) 100% DC and RF power tested Overmold assembly in multiple AP facilities June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 2
LD9LF Technology Generation Updated Portfolio 700MHz to 1000 MHz Doherty applications 700 1000 MHz Up to 360 Watts Industry Leading Performance Best in Class Ruggedness & RF Performance Gain ~19dB (class AB, at optimum tuning point) Product level PAE ~60% Enhanced IBW (xbt) Smart Discrete Package LDMOS Gen LD9 provides 2% better efficiency and 2dB gain improvements High Power Density + Innovative Pkg Technology Enable Compact Doherty Designs Increased peak power >250W in Single Ended package >400W in Push-Pull Package Further Improved Thermal Performance Enhanced ruggedness and IBW (xbt) >270W >400W For Compact Doherty June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 3
Power Level 700 MHz Output Transistors PTFB073608FV xbt P1dB ~ 360 W 725-768 MHz H-34275-6/2 PTFA072401FL (xbt) P1dB ~ 210 W 725-768 MHz H-37248-4 PTFB072707FH P1dB ~ 270 W 725-768 MHz H-34288-4/2 PTFB071502FC P1dB ~ 2x75 W 725-768 MHz H-37248-4 ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 4
Power Level 800-1000 MHz Output Transistors PTFB093608FV P1dB ~ 360 W 920 960 MHz H-37275-6/2 PTFB093608FV xbt P1dB ~ 360 W 920 960 MHz H-37275-6/2 PTFB082817FH P1dB ~ 270 W 791 821 MHz H-34288-4/2 PTFB092707FH P1dB ~ 270 W 920 960 MHz H-34288-4/2 PTFB090901EA/FA P1dB ~ 90 W 920 960 MHz H-3x265-2 ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 5
Introducing LD10 LDMOS Portfolio 1.8 GHz to 2.6 GHz Complete Lineup for Doherty Amplifiers Full Next Generation Platform 2% higher Doherty efficiency >1.5 db higher gain than LD9 Improved robustness under fast pulse condition First Products at 2.6 GHz Power Levels up to 280 W Asymmetric 10W + 20W for small cells PTFC261402FC Broadband Sweep Enhanced IBW Smart Discrete Package Strong Development Pipeline Increased peak power >300W in Single Ended package >400W in Push-Pull Package Enhanced xbt technologies for wider signal bandwidth Further Improved Thermals >270W >300W >400W June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 6
Power Level 1800-1900 MHz Output Transistors PTFB193404F P1dB ~ 320 W 1930 1990 MHz H-37275-6/2 PTFB183404F P1dB ~ 320 W 1805 1880 MHz H-37275-6/2 PTFB193408SV xbt P1dB ~ 320 W 1910 1990 MHz H-37275G-6/2 PTFB183408SV xbt P1dB ~ 320 W 1805 1880 MHz H-34275G-6/2 PTFB182503EL/FL P1dB ~ 210 W 1805 1880 MHz H-3x288-4/2 PTFB192503EL/FL P1dB ~ 210 W 1930 1990 MHz H-3x288-4/2 PTAB182002FC P1dB ~ 200W Asymmetric (80+120W) 1805 1880 MHz H-34248-4 PTFB191501E/F P1dB ~ 140W 1930 1990 MHz H-3x248-2 ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 7
Gain [db] Efficiency Asymmetric Transistors Transistors for Doherty Configuration PTAB182002FC Doherty Performance 1C WCDMA, 1842 MHz, 28V, Idq=0.5A, 10dB PAR Peak : ~ 120 W Main : ~ 80 W 1805-1880 MHz Typ. Doherty Gain : 16 db Efficiency : 44% Pout: 45 dbm Avg. 17.0 16.8 16.6 16.4 16.2 16.0 15.8 54 51 48 45 42 39 36 15.6 33 15.4 30 15.2 27 H-34248-4 15.0 24 38 39 40 41 42 43 44 45 46 47 48 Po [dbm avg] Gain Eff June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 8
Power Level 2000-2200 MHz Output Transistors PTFB213004F P1dB ~ 280 W 2110 2170 MHz H-37275-8 PTFB212503EL/FL P1dB ~ 210 W 2110 2170 MHz H-3x288-6 PTFB211803EL/FL P1dB ~ 160 W 2110 2170 MHz H-3x288-6 PTFB213208FV xbt P1dB ~ 320 W 2110 2170 MHz H-34275-6/2 PTFB212507SH xbt P1dB ~ 210 W 2110 2170 MHz H-34288G-4/2 PTFB211501E/F P1dB ~ 140 W 2110 2170 MHz H-3x248-2 PTFB211503EL/FL P1dB ~ 140 W 2110 2170 MHz H-3x288-6 PTFB201402FC P1dB ~ 2x70 W 1880 2025 MHz H-34248-4 PTFB210801FA P1dB ~ 80W 2110 2170 MHz H-37265-2 ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 9
Power Level 2.3 2.7 GHz Output Transistors PTFC262808FV xbt P1dB ~ 4x70 W 2.6 GHz H-34275-6/2 PTF241402FC P1dB ~ 2x70 W 2.3-2.4 GHz H-37248-4 PTFC261402FC P1dB ~ 2x70 W 2.6 GHz H-37248-4 PTFC260402FC P1dB ~ 2x20 W 2.6 GHz H-34248-4 PTAC260302FC P1dB ~ 10W/20 W 2.6 GHz H-34248-4 PTFC260202FC P1dB ~ 2x10 W 2.6 GHz H-34248-4 ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 10
Power Level Non-Cellular 50V Output Transistors PTVA101K02EV 50V P1 db~1000 W 960-1215MHz H-36275-2 Matched I/O PTVA035002EV P1 db~450 W 390-450 MHz H-36275-4 Unmatched 50V PTVA123501EV 50V P1 db~350 W 1.2-1.4 GHz H-36248-2 Matched I/O PTVA106001EC P1 db~500 W 960-1215MHz H-36248-2 Matched I/O 50V PTVA120251EA P1 db~25 W 1.2-1.4 GHz H-36265-2 Unmatched 50V PTVA030121EA P1 db~12 W 390-450 MHz H-36265-2 Unmatched 50V ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 11
Gain [db] Innovative 30W Asymmetric Doherty Device for LTE 2.6GHz 5W Pico/Micro Base Station Asymmetric Doherty configuration Product Features Main : 14-15W (P -1dB ) @ Z opt Peak : 18-19W (P -1dB ) @ Z opt Operating Frequency 2.62 2.69GHz Linear Gain 19dB Efficiency (Main) 62% @ P -3dB CW VBW >300MHz (LF gain peak) Package 248 T2PAC (pure copper flange) Based on latest LD10M technology Superior performance at high frequency Very high ruggedness Best-in-class performance @ 2.6GHz Exceeds competing devices by ~5% efficiency and ~2dB gain 20 18 16 14 12 248 Push-Pull Package 20.6 x 9.8 mm 26030 Gain at Po=41.0dBm 10 2500 2600 2700 2800 Freq [MHz] Meas Key Benefits High efficiency, high performance solution for LTE @ 2.6GHz Compact 2-in-1 solution for 5W P ave Doherty final stage in pico/micro base station Smallest heatsink requirement and CTE matched to copper coin, due to pure copper flange Long-term reliability through LD10M s very high ruggedness June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 12
LDMOS RF Power 2-Stage Amplifiers 700 MHz to 2200 MHz Product Frequency MHz P OUT Watts Gain db Eff. % Test Signal V DD Volts Package PTMA080152M 700 1000 20 29 49 CW 28 PG-DSO-20 PTMA210152M 1800 2200 20 28 48 CW 28 PG-DSO-20 PTMA080302M 700 1000 30 31 46 CW 28 PG-DSO-20 PTMA080304M 700 1000 2x15 31 50 CW 28 PG-DSO-20 PTMA180402EL 1800 2000 40 30 14 CDMA 28 H-33265-8 PTMA180402FL 1800 2000 40 30 14 CDMA 28 H-34265-8 PTMA180402M 1800 2200 40 30 45 CW 28 PG-DSO-20 PTMA210452EL 1900 2200 45 28 10.5 WCDMA 28 H-33265-8 PTMA210452FL 1900 2200 45 28 10.5 WCDMA 28 H-34265-8 June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 13
Unmatched General Purpose Transistors 700 MHz to 2200 MHz Product Frequency (MHz) P 1dB (W) Gain (db) Eff (%) Pout PEP (W) Test Signal Θjc ( C/W) VDD (V) Package PTFA220041M V4 700 2200 5 19 37 4 2T 5.5 28 PTFA220081M V4 700 2200 9 18 37 8 2T 4.5 28 PTFA220121M V4 700 2200 14 16 37 9 2T 3.4 28 June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 14
Doherty Reference Designs 1800-1900 MHz Assymetric Doherty - LTA1800-600 Main: PTFB182503FL V1 Peak: PTFB183404F V1 58dBm P3dB 44% Efficiency at 8.5dB back off Assymetric Doherty - LTA1900-600 Main: PTFB192503FL V1 Peak: PTFB193404F V1 58dBm P3dB 44% efficiency at 8.5dB back off Symmetric Doherty - LTD1800-500 Target 1.8 GHz W-CDMA, GSM, and CDMA systems Smart Discrete design offers ultra-compact layout (500W) demo circuit Main & Peak: PTFB182503FL V1 P3dB >56dBm 44% efficiency at 6dB back off June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 15
Four new high power transistors for RADAR markets PTFB030121EA PTFB035002EV PTFB120251EA PTFB123501EC Freq Oper. 390-450 MHz 390-450 MHz 1.2-1.4 GHz 1.2-1.4 GHz Pout @ 1dB 12W 400W 30W 350W Efficiency 70% 74% 54% 53% Gain 24dB 19dB 16.5dB 15dB Pkg Type 265-2 type 275-4 type 265-2 type 248-2 type Ruggedness 10:1 VSWR 10:1 VSWR 10:1 VSWR 10:1 VSWR Test Cond. Pulse 12 microsec 10% duty cycle Pulse 12 microsec 10% duty cycle Pulse 100 microsec 10% duty cycle Pulse 100microsec 10% duty cycle June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 16
PTVA035002EV 500W, 50V, UHF Band Features: Designed for pulse applications; high voltage 50V Vdd Typical performance Class AB (Vdd=50V, 12microsec pulse width, 10% duty cycle, Pout = 500W, 450MHz) Gain: 18 db Drain Efficiency: 64% Typical performance Class B (Vdd = 50V, 12microsec pulse width, 10% duty cycle, Pout = 500W, 450MHz, Vg=2.9V) Gain = 15.5 db Drain Efficiency: 70% Capable of CW operation Capable of withstanding 13:1 load missmatch at 56dBm, 50V Excellent thermal performance Rth 0.2 degc/w June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 17
Appendix
RF Power Product Identification System PT X Y FF PPP C T O Vx (Ryyy) PTFB091607FH/1 V1 R250 Product Revision Optional: Customer Specific Product Optional Packing Type R250 - Tape & Reel 250pcs S250 Tape & Reel 250pcs Txxx Box with xxx parts Device Type: F Discrete 28V M 2-stage RFIC V Discrete 50V Open-Cavity Outlines A- 265 C- 248 H-288 V- 275 Overmolded None SON10 R - SON 12 Die Generation: No letter GM7 A GM8/LD8/LDH1 B LD9 C LD10 Frequency: 26 2620 ~ 2680 MHz 24 2420 ~ 2480 MHz 22 700 ~ 2200 MHz 21 2110 ~ 2170 MHz 19 1930 ~ 1990 MHz 18 1805 ~ 1880 MHz 16 1620 ~ 1670 MHz 14 1450 ~ 1500 MHz 09 925 ~ 960 MHz 08 860 ~ 894 MHz 07 725 ~ 770 MHz 04 450 ~ 860 MHz Power Rating: 010 10 watts 130 130 watts 300 300 watts etc. Package Technology: A Ceramic standard eared flange (obsolete) C Ceramic earless flange (obsolete) E Ceramic CPC eared flange (TEPAC) F Ceramic CPC earless flange (TEPAC) G Plastic open cavity eared (EPOC) H Plastic open cavity earless flange (EPOC) M Plastic over molded surface mount S Ceramic open cavity surface mount (TEPAC) Package Configuration/Auto-bias Discrete Transistors: 1 Single-Ended 2 Push-Pull 3 Four leads Smart Discrete SE 4 Four leads Smart Discrete PP 5 Four leads Smart Discrete + Autobias SE 6 Four leads Smart Discrete + Autobias PP 7 Two leads Smart Discrete SE 8 Two leads Smart Discrete PP For Hybrids/Modules - # of stages For ICs # of stages June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 19
June 7, 2012 Copyright Infineon Technologies 2011. All rights reserved. Page 20