VS- Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A FEATURES High current capability High surge capability Industrial standard package 3000 V RMS isolating voltage with non-toxic substrate Designed and qualified for industrial level UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Super MAGN-A-PAK PRODUCT SUMMARY I T(AV) 570 A Type Modules - thyristor / diode Package Super MAGN-A-PAK Circuit configuration SCR / diode doubler circuit TYPICAL APPLICATIONS Motor starters DC motor controls - AC motor controls Uninterruptable power supplies MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I T(AV), I F(AV) T C = 85 C 570 I T(RMS) T C = 85 C 894 I TSM 60 Hz 18 800 50 Hz 18 000 50 Hz 1620 I 2 t 60 Hz 1473 ka 2 s I 2 t 16 200 ka 2 s V DRM /V RRM 1600 V T Stg Range -40 to +125 T J Range -40 to +135 C A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE V RRM /V DRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V I RRM /I DRM MAXIMUM AT T J = T J MAXIMUM ma VS- 16 1600 1700 110 Revision: 28-Apr-17 1 Document Number: 95717
VS- ON-STATE CONDUCTION Maximum average on-state current I T(AV), 570 A 180 conduction, half sine wave at case temperature I F(AV) 85 C Maximum RMS on-state current I T(RMS) 180 conduction, half sine wave at T C = 85 C 894 A t = 10 ms No voltage 18.0 Maximum peak, one-cycle, I TSM, t = 8.3 ms reapplied 18.8 non-repetitive on-state surge current I FSM t = 10 ms % V RRM 15.1 ka t = 8.3 ms reapplied Sinusoidal 15.8 half wave, t = 10 ms No voltage initial T J = T J maximum 1620 t = 8.3 ms reapplied 1473 Maximum I 2 t for fusing I 2 t ka 2 s t = 10 ms % V 1146 RRM t = 8.3 ms reapplied 1042 Maximum I 2 t for fusing I 2 t t = 0.1 ms to 10 ms, no voltage reapplied 16 200 ka 2 s Low level value or threshold voltage V T(TO)1 (16.7 % x π x I T(AV) < I < π x I T(AV) ), T J = T J maximum 0.59 High level value of threshold voltage V T(TO)2 (I > π x I T(AV) ), T J = T J maximum 0.63 V Low level value on-state slope resistance r t1 (16.7 % x π x I T(AV) < I < π x I T(AV) ), T J = T J maximum 0.41 High level value on-state slope resistance r t2 (I > π x I T(AV) ), T J = T J maximum 0.38 mω Maximum on-state voltage drop SCR V TM I pk = 1500 A, T J = 25 C, t p = 10 ms sine pulse 1.36 V Diode V FM Maximum holding current I H 500 T J = 25 C, anode supply 12 V resistive load Maximum latching current I L 0 ma SWITCHING Maximum rate of rise of turned-on current di/dt T J = T J maximum, I TM = 400 A, V DRM applied 0 A/μs Typical delay time t d Gate current 1 A, di g /dt = 1 A/μs V d = 0.67 % V DRM, T J = 25 C 2.0 Typical turn-off time t q I TM = 750 A; T J = T J maximum, di/dt = - 60 A/μs, V R = 50 V, dv/dt = 20 V/μs, gate 0 V Ω 65 to 240 μs BLOCKING Maximum critical rate of rise of off-state voltage dv/dt T J = T J maximum, linear to V D = 80 % V DRM 0 V/μs RMS insulation voltage V INS t = 1 s 3000 V Maximum peak reverse and off-state leakage current I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied 110 ma Revision: 28-Apr-17 2 Document Number: 95717
VS- TRIGGERING Maximum peak gate power P GM T J = T J maximum, t p 5 ms 10 Maximum peak average gate power P G(AV) T J = T J maximum, f = 50 Hz, d% = 50 2.0 W Maximum peak positive gate current +I GM 3.0 A Maximum peak positive gate voltage +V GM T J = T J maximum, t p 5 ms 20 Maximum peak negative gate voltage -V GM 5.0 V Maximum DC gate current required to trigger I GT 200 ma T J = 25 C, V ak 12 V DC gate voltage required to trigger V GT 3.0 V DC gate current not to trigger I GD T J = T J maximum 10 ma DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction operating T temperature range J -40 to +135 C Maximum storage temperature range T Stg -40 to +125 Maximum thermal resistance, R junction to case per junction thjc DC operation 0.06 K/W Maximum thermal resistance, R case to heatsink thc-hs 0.02 Mounting torque ± 10 % Super MAGN-A-PAK to heatsink A mounting compound is recommended and 6 to 8 the torque should be rechecked after a period of 3 hours to allow for the spread of the busbar to Super MAGN-A-PAK compound 12 to 15 Approximate weight 1500 g Case style See dimensions (link at the end of datasheet) Super MAGN-A-PAK Nm ΔR thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.009 0.006 0.011 0.011 0.014 0.015 0.021 0.022 0.037 0.038 T J = T J maximum Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Revision: 28-Apr-17 3 Document Number: 95717
VS- Maximum Allowable Case Temperature ( C) 130 120 110 90 80 70 R thjc (DC) = 0.06 K/W Conduction angle 180 60 0 50 150 200 250 300 350 400 450 500 550 600 Average On-State Current (A) Maximum Average On-StatePower Loss (W) 1300 1200 180 1 0 DC 900 800 700 RMS limit 600 500 400 300 Conduction period 200 0 0 200 300 400 500 600 700 800 900 0 1 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) 130 120 110 90 80 R thjc (DC) = 0.06 K/W Conduction Period 70 180 DC 60 50 0 200 300 400 500 600 700 800 900 Average On-state Current (A) Peak Half Sine Wave On-State Current (A) 16 500 15 500 14 500 13 500 12 500 11 500 10 500 9500 8500 7500 1 At any rated load condition and with rated V RRM applied following surge. Initial T J = 135 C at 50 Hz 0.0 s at 60 Hz 0.0083 s 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-StatePower Loss (W) 0 800 600 180 RMS limit 400 Conduction angle 200 T J = 130 C 0 0 200 300 400 500 600 700 Average On-State Current (A) Peak Half Sine Wave On-State Current (A) 17 000 15 000 13 000 11 000 9000 7000 0.01 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial T J = 135 C Rated V RRM reapplied No voltage reapplied 0.1 1 Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 28-Apr-17 4 Document Number: 95717
VS- Maximum Total On-State Power Loss (W) 1200 0 800 600 400 200 Conduction angle 180 0 0 200 400 600 800 0 1200 Total RMS Output Current (A) Maximum Total On-StatePower Loss (W) 900 800 700 500 500 400 300 200 R ths_a = 0.09 - Delta R 0.12 K/W 0.16 K/W 0.2 K/W 0.3 K/W 0.4 K/W 0.6 K/W 0 0 20 40 60 80 120 Maximum Allowable Ambient Temperature ( C) Fig. 7 - On-State Power Loss Characteristics Instantaneous On-State Current (A) 10 000 0 10 135 C 25 C 1 0 0.5 1 1.5 2 Maximum Instantaneous On-State Voltage (V) Z thjc - Transient Thermal Impedance (K/W) 0.1 0.01 Steady state value R = 0.06 K/W (DC operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - On-State Voltage Drop Characteristics Fig. 9 - Thermal Impedance Z thjc Characteristics Revision: 28-Apr-17 5 Document Number: 95717
VS- ORDERING INFORMATION TABLE Device code VS-VS KH 570-16 PbF 1 2 3 4 5 1 - product 2 3 4 5 - Circuit configuration (see below) - Current rating - Voltage code x = V RRM - Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKH 1 ~ SCR / diode doubler circuit KH + 2 3 4 (K1) - 5 (G1) Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95283 Revision: 28-Apr-17 6 Document Number: 95717
Outline Dimensions DIMENSIONS in millimeters (inches) Super MAGN-A-PAK Thyristor/Diode 18 (0.71) max. 17 (0.67) max. 9.9 ± 0.5 (0.39 ± 0.02) 19 (0.75) 52 (2.05) 48 (1.90) 6.5 mm ± 0.3 mm x 4 holes (Typ.) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) M10 5 4 60.0 (2.36) 48.0 (1.89) 1 28.0 (1.10) 17.8 (0.70) 3 2 6 7 26.0 (0.98) 112.0 (4.41) 26.0 (0.98) 36.4 (1.14) 4.5 (0.20) 1.0 (0.039) 124.0 (4.88) 149.0 (5.67) 5, 6 = Gate 4, 7 = Cathode Revision: 14-Dec-16 1 Document Number: 95283
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