Hight frequency secondary rectifier Main product characteristics I F(AV) V RRM T j (max) V F (max) t rr (typ) Features and benefits Combines highest recovery and reverse voltage performance Ultra-fast, soft and noise-free recovery Insulated packages: TO-22FPAB Electric insulation: 2 V DC Capacitance: 12 pf Description 2 x A 3 V 17 C 1 V 35 ns Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-22AB, TO-22FPAB, I 2 PAK or D 2 PAK, this device is especially intended for secondary rectification. A1 A2 A2 A1 K TO-22FPAB STTH23CFP Order codes Part Number STTH23CT STTH23CG STTH23CG-TR STTH23CF STTH23CFP STTH23CR A1 K A2 TO-22AB STTH23CT K K A2 A1 D 2 PAK STTH23CG I 2 PAK STTH23CR Marking A1 K A2 STTH23CT STTH23CG STTH23CG STTH23CF STTH23CFP STTH23CR March 27 Rev 8 1/11 www.st.com 11
Characteristics STTH23C 1 Characteristics Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 3 V I F(RMS) RMS forward voltage 3 A I F(peak) Peak working forward current δ =.5 I 2 PAK, D 2 PAK, TO-22AB T c = 14 C TO-22FPAB T c = 125 C Per diode Per device I FSM Surge non repetitive forward current t p = ms sinusoidal 1 A I RSM Non repetitive avalanche current t p = µs square 5 A T stg Storage temperature range -65 to + 175 C Table 2. T j Maximum operating junction temperature 175 C Thermal resistance Symbol Parameter Value (max) Unit 2 A R th(j-c) Junction to case I 2 PAK, D 2 PAK, TO-22AB Per diode 2.5 Total 1.3 TO-22FPAB Per diode 4.6 Total 4 R th(c) TO-22FPAB Coupling 3.5 I 2 PAK, D 2 PAK, TO-22AB Coupling.1 C/W Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 2 V R = 3 V T j = 125 C 3 3 µa V F (2) Forward voltage drop T j = 25 C 1.25 I F = A T j = 125 C.85 1 V 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % Note: To evaluate the conduction losses use the following equation: P =.75 x I F(AV) +.25 I F 2 (RMS)) 2/11
Characteristics Table 4. Recovery Characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time T j = 25 C I F =.5 A I rr =.25 A 25 I R = 1 A I F = 1 A V R = 3 V 35 di F /dt = -5 A/µs ns t fr Forward recovery time T j = 25 C I F = A di F /dt = A/µs V FR = 1.1 x V Fmax 23 ns V FP Peak forward voltage T j = 25 C I F = A di F /dt = A/µs 3.5 V I RM Reverse recovery current T j = 125 C I F = A V CC = 2V 8 A S di F /dt = 2 A/µs factor Softness factor.3-3/11
Characteristics STTH23C Figure 1. Conduction losses versus average forward current (per diode) Figure 2. Forward voltage drop versus forward current (maximum values, per diode) P1(W) 14 12 δ =.5 δ =.1 δ =.2 δ =.5 2 I FM(A) 8 δ = 1 T j=25 C 6 T j=75 C 4 T 2 I F(AV) (A) δ=tp/t tp 2 4 6 8 12 V FM(V) 1.5.75 1. 1.25 1.5 1.75 2. 2.25 2.5 2.75 3. Figure 3. 1. Z th(j-c) /Rth(j-c) Relative variation of thermal impedance junction to case versus pulse duration (TO-22AB / D 2 PAK / I 2 PAK) Figure 4. 1. Z th(j-c) /Rth(j-c) Relative variation of thermal impedance junction to case versus pulse duration (TO-22FPAB).8.8.6 δ =.5.6 δ =.5.4 δ =.2 δ =.1.2 Single pulse t p(s) δ=tp/t tp. 1E-3 1E-2 1E-1 1E+ T.4.2. δ =.2 δ =.1 Single pulse t (s) p δ=tp/t 1E-2 1E-1 1E+ 1E+1 T tp Figure 5. Peak reverse recovery current versus di F /dt (9% confidence, per diode) Figure 6. Reverse recovery time versus di F /dt (9% confidence, per diode) 16 I RM(A) t (ns) rr 14 12 V R=2V I=I F F(AV) I F=2 x IF(AV) 8 I=I F F(AV) V R=2V 8 I F=.5 x IF(AV) 6 I F=2 x IF(AV) I F=.5 x IF(AV) 6 4 4 2 di F/dt(A/µs) 5 15 2 25 3 35 4 45 5 2 di F/dt(A/µs) 5 15 2 25 3 35 4 45 5 4/11
Characteristics Figure 7. Softness factor (tb/ta) versus di F /dt (typical values, per diode) Figure 8. Relative variation of dynamic parameters versus junction temperature (reference: T j = 125 C).6.5.4.3.2.. S factor di /dt(a/µs) F V R=2V 5 15 2 25 3 35 4 45 5 2.4 2.2 2. 1.8 S factor 1.6 1.4 1.2 1..8 IRM.6.4.2 T j( C). 25 5 75 125 Figure 9. Transient peak forward voltage versus di F /dt (9% confidence, per diode) (TO-22AB) Figure. Forward recovery time versus di F /dt (9% confidence, per diode) 8 V FP(V) I=I F F(AV) 5 4 t (ns) fr I=I F F(AV) V FR=1.1 x VF max. 6 3 4 2 2 di F/dt(A/µs) 5 15 2 25 3 35 4 45 5 di F/dt(A/µs) 5 15 2 25 3 35 4 45 5 Figure 11. 8 7 6 5 4 3 2 R th(j-a) ( C/W) Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (D 2 PAK). S(Cu)(cm²) 5 15 2 25 3 35 4 5/11
Package information STTH23C 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.55 Nm Maximum torque value:.7 Nm Table 5. I 2 PAK dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max. A A 4.4 4.6.173.181 E c2 A1 2.4 2.72.94.7 L2 b.61.88.24.35 b1 1.14 1.7.44.67 D c.49.7.19.28 c2 1.23 1.32.48.52 L1 A1 D 8.95 9.35.352.368 L b1 e 2.4 2.7.94.6 e1 4.95 5.15.195.23 E.4.394.49 e e1 b c L 13 14.512.551 L1 3.5 3.93.138.155 L2 1.27 1.4.5.55 6/11
Package information Table 6. D 2 PAK dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.3 4.6.169.181 L2 E C2 A A1 2.49 2.69.98.6 A2.3.23.1.9 B.7.93.27.37 L D B2 1.25 1.4.48.55 L3 B2 B A1 C R C.45.6.17.24 C2 1.21 1.36.47.54 D 8.95 9.35.352.368 G E..28.393.45 2mm min. FLAT ZONE A2 G 4.88 5.28.192.28 L 15. 15.85.59.624 V2 L2 1.27 1.4.5.55 L3 1.4 1.75.55.69 R.4.16 V2 8 8 Figure 12. Footprint (dimensions in millimeters) 16.9.3 5.8 1.3 8.9 3.7 7/11
Package information STTH23C Table 7. TO-22AB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6.173.181 H2 Dia L5 A C L7 C 1.23 1.32.48.51 D 2.4 2.72.94.7 E.49.7.19.27 F.61.88.24.34 L2 F2 L6 F1 1.14 1.7.44.66 F2 1.14 1.7.44.66 G 4.95 5.15.194.22 F1 L9 D G1 2.4 2.7.94.6 F L4 H2.4.393.49 L2 16.4 typ..645 typ. G1 G M E L4 13 14.511.551 L5 2.65 2.95.4.116 L6 15.25 15.75.6.62 L7 6.2 6.6.244.259 L9 3.5 3.93.137.154 M 2.6 typ..2 typ. Diam. 3.75 3.85.147.151 8/11
Package information Table 8. TO-22FPAB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6.173.181 H A B B 2.5 2.7.98.6 D 2.5 2.75.98.8 E.45.7.18.27 Dia F.75 1.3.39 L6 F1 1.15 1.7.45.67 L2 L7 F2 1.15 1.7.45.67 L3 G 4.95 5.2.195.25 L4 F1 F2 L5 D G1 2.4 2.7.94.6 H.4.393.49 L2 16 Typ..63 Typ. G1 F E L3 28.6 3.6 1.126 1.25 L4 9.8.6.386.417 G L5 2.9 3.6.114.142 L6 15.9 16.4.626.646 L7 9. 9.3.354.366 Dia. 3. 3.2.118.126 In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 9/11
Ordering information STTH23C 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH23CT STTH23CT TO-22AB 2.2 g 5 Tube STTH23CG STTH23CG D 2 PAK 1.48 g 5 Tube STTH23CG-TR STTH23CG D 2 PAK 1.48 g 5 Tape & reel STTH23CFP STTH23CFP TO-22AB 2.8 g 5 Tube STTH23CR STTH23CR I 2 PAK 1.49 g 5 Tube 4 Revision history Date Revision Description of Changes Aug-23 7D Last release. 26-Mar-27 8 Removed ISOWATT package. /11
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