ST180S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 200A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST180S Units I T(AV) 200 A @ T C 85 C I T(RMS) 314 A I TSM @ 50Hz 5000 A @ 60Hz 5230 A I 2 t @ 50Hz 125 KA2 s @ 60Hz 114 KA 2 s V DRM /V RRM 400 to 2000 V t q typical µs - 40 to 125 C case style TO-209AB (TO-93) 1
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, repetitive V RSM, maximum non- I DRM /I RRM Type number Code peak and off-state voltage repetitive peak voltage @ max V V ma 04 400 500 08 800 900 ST180S 12 1200 1300 30 16 1600 1700 20 2000 2 On-state Conduction I T(AV) Max. average on-state current 200 A 180 conduction, half sine wave @ Case temperature 85 C I T(RMS) Max. RMS on-state current 314 A DC @ 76 C case temperature I TSM Max. peak, one-cycle 5000 t = 10ms No voltage non-repetitive surge current 5230 t = 8.3ms reapplied 4200 A t = 10ms % V RRM 4400 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 125 t = 10ms No voltage Initial 114 KA 2 s t = 8.3ms reapplied 88 t = 10ms % V RRM 81 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 1250 KA 2 s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold 1.08 voltage V (16.7% x π x I T(AV) < I < π x I T(AV) ), V T(TO)2 High level value of threshold voltage 1.14 (I > π x I T(AV) ), r t1 Low level value of on-state 1.18 slope resistance mω (16.7% x π x I T(AV) < I < π x I T(AV) ), r t2 High level value of on-state slope resistance 1.14 (I > π x I T(AV) ), V TM Max. on-state voltage 1.75 V I pk = 570A, = 125 C, t p = 10ms sine pulse I H Maximum holding current 600 I L Max. (typical) latching current 0 (300) ma max, anode supply 12V resistive load Switching di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t r 1µs 0 A/µs of turned-on current max, anode voltage 80% V DRM Gate current 1A, di g /dt = 1A/µs t d Typical delay time 1.0 V d = 0.67% V DRM, µs = 25 C I TM = 300A, max, di/dt = 20A/µs, V R = 50V t q Typical turn-off time dv/dt = 20V/µs, Gate 0V Ω, t p = 500µs 2
Blocking dv/dt I DRM I RRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 500 V/µs max linear to 80% rated V DRM 30 ma max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 10 max, t p 5ms P G(AV) Maximum average gate power 2.0 W max, f = 50Hz, d% = 50 I GM Max. peak positive gate current 3.0 A max, t p 5ms +V GM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5.0 V max, t p 5ms TYP. MAX. I GT DC gate current required 180 - = - 40 C to trigger 90 40 150 - ma = 25 C = 125 C V GT DC gate voltage required 2.9 - = - 40 C to trigger 1.8 1.2 3.0 - V = 25 C = 125 C I GD DC gate current not to trigger 10 ma V GD DC gate voltage not to trigger 0.25 V max Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Max. gate current/ voltage not to trigger is the value which will not trigger any unit with rated V DRM anode-to-cathode applied Thermal and Mechanical Specification Max. operating temperature range -40 to 125 T stg Max. storage temperature range -40 to 150 C R thjc Max. thermal resistance, junction to case 0.105 DC operation R thcs Max. thermal resistance, K/W case to heatsink 0.04 Mounting surface, smooth, flat and greased T Mounting torque, ± 10% 31 (275) 24.5 (210) Non lubricated threads Nm (lbf-in) Lubricated threads wt Approximate weight 280 g Case style TO - 209AB (TO-93) See Outline Table 3
R thjc Conduction (The following table shows the increment of thermal resistence R thjc when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions 180 0.015 0.012 120 0.019 0.020 90 0.025 0.027 K/W 60 0.036 0.037 30 0.060 0.060 Ordering Information Table Device Code ST 18 0 S 20 P 0 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3-0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - P = Stud base 3/4"-16UNF2A threads 7-0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) NOTE: For Metric device M16 x 1.5 Contact factory 4
Outline Table GLASS METAL SEAL 210 (8.26) 10 (0.39) +I 90 (3.54) MIN. 19 (0.75) MAX. 8.5 (0.33) DIA. RED SILICON RUBBER 38.5 (1.52) MAX. 16 (0.63) MAX. RED CATHODE RED SHRINK 27.5 (1.08) MAX. 4.3 (0.17) DIA. 2 C.S. 0.4mm (0.0006 s.i.) WHITE GATE 220 (8.66) + - 10 (0.39) WHITE SHRINK 28.5 (1.12) MAX. DIA. SW 32 FLEXIBLE LEAD C.S. 25mm 2 (0.039 s.i.) 4 (0.16) MAX. 9.5 (0.37) MIN. 22 (0.86) MIN. Fast-on Terminals AMP. 280000-1 REF-250 3/4"-16UNF-2A * 35 (1.38) MAX. * FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) 210 (8.26) 10 (0.39) +I CERAMIC HOUSING 19 (0.75) MAX. 8.5 (0.33) DIA. 90 (3.54) MIN. RED SILICON RUBBER 38.5 (1.52) MAX. 16 (0.63) MAX. RED CATHODE RED SHRINK 27.5 (1.08) MAX. 35 (1.38) MAX. 4.3 (0.17) DIA. 2 C.S. 0.4mm (0.0006 s.i.) WHITE GATE 220 (8.66) + - 10 (0.39) WHITE SHRINK 27.5 (1.08) MAX. DIA. SW 32 3/4"-16UNF-2A * FLEXIBLE LEAD C.S. 25mm 2 (0.039 s.i.) 4 (0.16) MAX. 9.5 (0.37) MIN. 22 (0.86) MIN. * FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY 5
Maximum Allowable Case Temperature ( C) 130 R thjc (DC) = 0.105 K/W 120 110 Conduction Angle 30 60 90 90 120 180 80 0 40 80 120 160 200 240 Maximum Allowable Case Temperature ( C) 130 120 110 ST180S Se ries R thjc (DC) = 0.105 K/ W Conduction Period 90 30 60 80 90 120 180 DC 70 0 50 150 200 250 300 350 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 350 300 250 200 150 50 180 120 90 60 30 RMS Lim it Conduction Angle ST180S Se rie s T = 125 C J 0.16 K/ W 0.2 K/W 0.3 K/ W 0.4 K/W 0.5 K/W 0.8 K/ W 1.2 K/ W R = 0.08 K/W - Delta R 0 0 40 80 120 160 200 240 25 50 75 125 Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) 0.1 K/ W thsa Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 500 450 400 350 300 250 200 150 DC 180 120 90 60 30 RMS Limit Conduction Period R = 0.08 K/ W - Delta R 50 = 125 C 0 0 40 80 120 160 200 240 280 320 25 50 75 125 Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) 0.1 K/ W thsa 0.16 K/ W 0.2 K/ W 0.3 K/ W 0.4 K/ W 0.5 K/W 0.8 K/ W 1.2 K/ W Fig. 4 - On-state Power Loss Characteristics 6
Peak Half Sine Wave On-state Current (A) 4800 4400 4000 3600 3200 2800 2400 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 2000 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Pea k Ha lf Sine Wave On-state Current (A) 5500 5000 4500 4000 3500 3000 2500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial = 125 C No Voltage Reapplied Rated V RRMReapplied 2000 0.01 0.1 1 Pulse Tra in Durat ion (s) Fig. 6 - Maximum Non-Repetitive Surge Current 00 Instantaneous On-state Current (A) 0 T = 25 C J T = 125 C J 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thjc (K/W) 1 0.1 0.01 St ea d y St a t e Va lue R thjc = 0.105 K/ W (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristic 7
Instantaneous Gate Voltage (V) 10 1 Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms tr<=1 µs (b) VGD Tj=125 C Tj=25 C Tj=-40 C IGD Device: Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 (a) Instantaneous Gate Current (A) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (1) (2) (3) (4) Fig. 9 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at for sales contact information. 03/03 8