Wright State University CORE Scholar Physics Seminars Physics 5-19-2014 Si/SiGe BiCMOS Microsystems for Microwave and Millimeter-Wave Sensing and Communications Hermann Schumacher hschu@ieee.org Follow this and additional works at: http://corescholar.libraries.wright.edu/physics_seminars Part of the Physics Commons Repository Citation Schumacher, H. (2014)... This Presentation is brought to you for free and open access by the Physics at CORE Scholar. It has been accepted for inclusion in Physics Seminars by an authorized administrator of CORE Scholar. For more information, please contact corescholar@www.libraries.wright.edu.
Hermann Schumacher May 07, 2014 Si/SiGe BiCMOS Microsystems for Microwave and Millimeter-Wave Sensing and Communications Hermann Schumacher, Institute of Electron Devices and Circuits, Ulm University, Ulm, Germany Email: hschu@ieee.org
Page 2 Who We Are Ulm University: 10,000 students, founded in 1967 Ranked #16 in THE 100 universities under 50, No. 1 in Germany Institute of Electron Devices and Circuits: since 1989, currently 3 professors, 30 staff, plus undergraduate/graduate students Schumacher group: Compound semiconductor ICs and high frequency microsystems (publicprivate partnership with Airbus)
Page 3 Table of Contents The case for Si/SiGe HBT and BiCMOS Case study #1: impulse-radio ultrawideband systems for vital sign detection Case study #2: RFMEMS and BiCMOS: reconfigurable mm-wave ICs Case study #3: A SiGe BiCMOS frontend for a 140 GHz MIMO radar
Page 4 The case for Si/SiGe HBT and BiCMOS SiGe HBT technologies are cheap: high cutoff frequencies with very relaxed lateral scaling (e.g. 80 GHz f T with 0.8 µm feature size) SiGe BiCMOS is not cheap (at low to medium market volume). But combination of mm-wave performance with mixed signal electronics on chip, with unparalleled complexity.
Page 5 The case for Si/SiGe HBT and BiCMOS SiGe HBT technologies are cheap: high cutoff frequencies with very relaxed lateral scaling (e.g. 80 GHz f T with 0.8 µm feature size) SiGe BiCMOS is not cheap IHP SG13S (at low to medium market volume). IHP SG25H3 But combination of mm-wave performance with mixed signal Tfk. SiGe2RF electronics on chip, with unparalleled complexity.
Page 6 I-UWB chipset for vital sign detection (1) Tunable pulse shape: Adapts to FCC, ECC, spectral masks. Dayang Lin, now NXP
Page 7 I-UWB chipset for vital sign detection (2)
Page 8 I-UWB chipset for vital sign detection (3)
Page 9 I-UWB chipset for vital sign detection (4)
Page 10 o IHP SG25H3, 5 metal layers RFMEMS technology o RFMEMS: one additional mask o Dielectric-less actuation Mehmet Kaynak, IHP
Page 11 Switch performance
Page 12 Band-switchable mm-wave VCO (1) Gang Liu, now UCSD
Page 13 Band-switchable mm-wave VCO (2) Design: ADS, using switch S-parameters A = 0.68 mm 2 Switch: 330 x 220 mm 2 P DC : 57 mw (VCO), 135 mw (divider) Switch: V>28 V, 0A
Page 14 Band-switchable mm-wave VCO (3) Switch up-state 48-52 GHz tuning range 4 dbm output power Experiment vs simulation: reproducibility of up/down state capacitances. Switch down-state 64-72 GHz tuning range 5 dbm output power
Page 15 Band-switchable mm-wave VCO (4) Transient switching behavior 28V Membrane position (LDV) 34V Divided frequency (Signal analyzer) 40V
Page 16 30 GHz reflect array antenna polarization grid antenna elements PCB feeding antenna ICs twisting and focusing ICs: phase and amplitude control; reversibility E x E y Tobias Chaloun, Prof. Wolfgang Menzel, Ulm
Page 17 RA T/R Module Concept Reversible signal path Signal direction, phase, amplitude controlled by serial bus Si/SiGe BiCMOS Requires two SPDT switches Tatyana Purtova, now Triquint; Filipe Tabarani, Ulm
Page 18 nmos SPDT 3 Cntl 1 2 Cntl At 30 GHz: 3.3 db loss 28.7 db isolation
Page 19 RFMEMS SPDT 0.4 db loss @ 30 GHz S 21 /db f/ghz S 21 /db 11 db isolation @ 30 GHz Mehmet Kaynak, IHP f/ghz
Page 20 SPDT Technology Mix After/before vector modulator: MOSFET After PA, before LNA: RFMEMS
Page 21 Quad-chip IC (nmos SPDTs) Chip Size: 3.5 x 3.5 mm² Supply voltage(s): RF function blocks: 2.5 V Mixed signal: 2.5 V, 3.3 V Power consumption: TX: 133mA @2.5V RX: 98mA @2.5V Mixed signal block (TX&RX): 1.8mA @3.3V ~0.6mA @2.5V Filipe Tabarani, Ulm
Page 22 Quad-chip validation (nmos SPDTs) Temperature read-out To I 2 C to VNA I2C adapter USB PC I2C bus RA test board VNA Ethernet to I²C adapter fully automatic measurement of a single T/R module test board suitable for reflect array IC with nmos SPDTs
Page 23 Quad-chip validation Quad-chip IC with nnmos switches f=30 GHz Receive direction 65536 states Transmission tunable -25.5 db.. 17.1 db
Page 24 Quad-chip validation: gain error (φ=30 ) Gain error plot for vector states with phase angle 29..31 degrees Gain settings 5..15 db (nmos SPDT)
Page 25 Quad-chip validation: phase error (G=8 db) Phase error plot for vector states with Gain settings 7.85..8.15 db Phase settings 0..360 (nmos SPDT)
Page 26 Reflect array testing (Tx mode) Individual calibration of each pixel with near-field probe TX mode Red: defective cells in prototype array T. Chaloun, Prof. W. Menzel, Ulm
Page 27 0 Reflect array testing (Tx mode) Relative amplitude (db) -10-20 -30 E-plane -40-90 -60-30 0 30 60 Angle (degrees) 90 0 Relative amplitude (db) -10-20 -30 H-plane Red: defective cells -40 in prototype array -90-60 -30 0 30 60 T. Chaloun, Prof. W. Menzel, Ulm Angle (degrees) 90
Page 28 Quad-chip IC (RFMEMS SPDTs) Chip Size: 4 x 3.85 mm Supply voltage(s): RF function blocks: 2.5 V Mixed signal: 2.5 V, 3.3 V Power consumption: TX: 132mA @2.5V RX: 86mA @2.5V Mixed signal block (TX&RX): ~1.7mA @3.3V ~0.6mA @2.5V
Page 29 RFMEMS Quad-chip with packaged switches Fraunhofer IZM, Berlin
Page 30 RFMEMS Quad-chip with packaged switches TX mode
Page 31 RFMEMS Quad-chip with packaged switches Proximity of pads to cap Lossy Si caps Significant gain reduction: TX mode: -3 db RX mode: -11 db Dummy cap over VM
Page 32 RFMEMS Quad-chip assembled into array
Page 33 RFMEMS Reflect Array preliminary results Transmission coefficient in db @ 30 GHz RX mode TX mode 8 ICs I2C bus issue, 7 ICs marginal RF performance Preliminary measurement results of the partly functional demonstrator
Page 34 Frontend for a 140 GHz MIMO radar system Scenario: scanning of unattended luggage Requirements: small, lightweight, reasonably low cost, high resolution
Page 35 Frontend for a 140 GHz MIMO radar system (2) 140 GHz frontend array
Page 36 Frontend for a 140 GHz MIMO radar system (3) On-chip antenna solution TX RX RX Off-chip antenna solution TX RX
Page 37 Frontend for a 140 GHz MIMO radar system (4) 2 LO s with frequency offset 12.5~20 GHz IN active balun X8 buffer 100~160 GHz Receiver output harmonic power [dbm] Bandwidth: 100-160GHz -25-30 -35-40 -45-50 -55-60 -65-70 -75-80 -85 Desired 8 th 7 th 9 th IN 12.5~20 GHz + 3.25kHz active balun X8 Buffer IF 26kHz 100~160 GHz + 26kHz 100 110 120 130 140 150 160 Frequency [GHz]
Page 38 Frontend for a 140 GHz MIMO radar system (5) Range resolution analysis TR modules with on-chip antennas 5 mm chirp generator Tx Rx Targets Two types of closely spaced targets PC Sound card IF amp. Beat tone detection/analysis 1 cm
Page 39 Frontend for a 140 GHz MIMO radar system (6) Two small mirror reflectors Ø = 0.75cm, 26cm away with 5 mm spacing 57 GHz chirping bandwidth Measured distance 10 0-10 -20 Magnitude [db] 10 5 0-5 0.22 0.24 0.26 0.28 0.3 0.32 Distance [m] 2 targets spacing 5mm IF Amplitude [V] 0.005 0.000 FFT -30-0.005 0 10 20 30 40 50 60 70 Time [ms] -40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 5 mm range resolution demonstrated
Page 40 Conclusions Demonstration of RF microsystems from 3 to 140 GHz Impulse radio UWB radar for vital sign monitoring Ka band system-on-chip for phased array antennas 140 GHz FMCW module for a MIMO radar system RFMEMS integration into Si/SiGe BiCMOS process opens new opportunities in terms of performance and reconfigurability. Further optimization and SoC/package co-design necessary.
Page 41 Acknowledgement Funding agencies: German Research Foundation DFG, European Commission Doctoral students and staff at Ulm University: Prof. W. Menzel, T. Chaloun (Institute of Microwave Techniques) Dr. V. Valenta, Dr. A. Trasser, Dr. T. Purtova, X. Gai, F. Tabarani, I. Somesanu, H. Abdeen (Institute of Electron Devices and Circuits) Collaboration partners M. Kaynak, Prof. B. Tillak, IHP Frankfurt/Oder V. Ziegler, Airbus Group Innovations, Ottobrunn W. Winkler, Silicon Radar, Frankfurt/Oder Fraunhofer IZM, Berlin