STTH6003. High frequency secondary rectifier

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Transcription:

High frequency secondary rectifier Datasheet - production data Features A1 A2 TO-247 Combines highest recovery and voltage performance Ultrafast, soft and noise-free recovery Low inductance and low capacitance allow simplified layout K A2 K A1 Description Dual rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. Symbol IF(AV) VRRM VF (max.) trr (max.) Table 1: Device summary Value 2 x 30 A 300 V 1 V 55 ns November 2016 DocID6144 Rev 7 1/9 This is information on a product in full production. www.st.com

Characteristics STTH6003 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 60 A IF(AV) Average forward current δ = 0.5, square wave Tc = 135 C Per diode 30 Per device 60 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A IRSM Non repetitive peak reverse current tp = 100 μs square 4 A Tstg Storage temperature range -65 to +175 C Tj Maximum operating junction temperature +175 C A Table 3: Thermal parameters Symbol Parameter Maximum Unit Rth(j-c) Per diode 1 Junction to case Total 0.55 C/W Rth(c) Coupling 0.1 When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Tj = 25 C - 60 VR = 300 V Tj = 125 C - 60 600 µa Forward voltage drop Tj = 25 C - 1.25 IF = 30 A Tj = 125 C - 0.85 1 V Notes: (1) Pulse test: tp = 5 ms, δ < 2 % (2) Pulse test: tp = 380 μs, δ < 2 % To evaluate the maximum conduction losses, use the following equation: P = 0.75 x IF(AV) + 0.008 x IF 2 (RMS) 2/9 DocID6144 Rev 7

Table 5: Dynamic characteristics Characteristics Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 C IF = 0.5 A; Irr = 0.25 A, IR = 1 A IF = 1 A, dif/dt = -50 A/μs, VR = 30 V - 40-55 tfr Forward recovery time IF = 30 A; - 350 ns dlf/dt = 200 A/µs, Tj = 25 C VFP Forward recovery voltage VFR = 1.1 x VF - 5 V Softness factor VCC = 200 V, - 0.3 - Tj = 125 C IF = 30 A, IRM Reverse recovery current - 11 A dif/dt = 200 A/μs Sfactor max. ns DocID6144 Rev 7 3/9

Characteristics 1.1 Characteristics (curves) 40 35 Figure 1: Conduction losses versus average current (per diode) P(W) δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 STTH6003 Figure 2: Forward voltage drop versus forward current (maximum values, per diode) 30 25 δ = 1 20 15 10 T 5 I F(AV) (A) δ =tp/t tp 0 0 5 10 15 20 25 30 35 40 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration (TO-247) Figure 4: Peak reverse recovery current versus dif/dt (90% confidence, per diode) Z th(j-c) /R th(j-c) 1. 0 0. 8 0. 6 δ = 0.5 0. 4 δ= 0.2 0. 2 δ = 0.1 S ingle pulse tp(s) δ =tp/t 0. 0 1E -3 1E -2 1E -1 1E +0 1E +1 T tp 4/9 DocID6144 Rev 7

Figure 5: Reverse recovery time versus dif/dt (90% confidence, per diode) Characteristics Figure 6: Softness factor (tb/ta) versus dif/dt (typical values, per diode) 180 160 140 t rr (ns) V R = 200 V T j = 125 C 0.6 0.5 Sfactor V R = 200 V T j = 125 C 120 I F = 2 x I F(AV) 0.4 100 80 60 I F = I F(AV) 0.3 0.2 40 I F = 0.5 x I F(AV) 20 dl F /dt(a/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0.1 0.0 dl F /dt(a/µs) 0 50 100 150 200 250 300 350 400 450 500 Figure 7: Relative variation of dynamic parameters versus junction temperature (Tj = 125 C) Figure 8: Transient peak forward voltage versus dif/dt (90% confidence, per diode) V 10 FP (V) 8 I F = I F(AV) T j = 125 C 6 4 2 0 dl F /dt(a/µs) 0 50 100 150 200 250 300 350 400 450 500 Figure 9: Forward recovery time versus dif/dt (90% confidence, per diode) 500 400 t fr (ns) I F = I F(AV) V FR = 1.1 x V Fmax T j = 125 C 300 200 100 dl F /dt(a/µs) 0 0 50 100 150 200 250 300 350 400 450 500 DocID6144 Rev 7 5/9

Package information STTH6003 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque values: 0.55 N m Maximum torque value: 1.0 N m 2.1 TO-247 package information Figure 10: TO-247 package outline 6/9 DocID6144 Rev 7

Package information Table 6: TO-247 package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D (1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.45 5.60 0.209 0.215 0.220 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 ØP (2) 3.55 3.65 0.139 0.143 ØR 4.50 5.50 0.177 0.217 S 5.30 5.50 5.70 0.209 0.216 0.224 Notes: (1) Dimension D plus gate protusion does not exceed 20.5 mm (2) Resin thickness around the mounting hole is not less than 0.9 mm. DocID6144 Rev 7 7/9

Ordering information STTH6003 3 Ordering information Table 7: Ordering information Order code Marking Package Weight Base qty. Delivery mode STTH6003CW STTH6003CW TO-247 4.36 g 30 Tube 4 Revision history Table 8: Document revision history Date Revision Changes Oct-1999 5C Previous revision. 18-Jun-2014 6 21-Nov-2016 7 Removed ISOTOP package. Updated Section 2: Package information. Updated Table 7: "Ordering information". Minor text changes. 8/9 DocID6144 Rev 7

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