50RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features High current rating Excellent dynamic characteristics dv/dt = 0V/µs option Superior surge capabilities Standard package Metric threads version available 50 A Types up to 600V V DRM / V RRM Typical Applications Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters 50RIA to 40 to 60 Units I T(AV) 50 50 A @ T C 94 C I T(RMS) A I TSM @ 50Hz 430 0 A @ 60Hz 4 257 A I 2 t @ 50Hz.8 7.2 KA2 s @ 60Hz 9.30 6.58 KA 2 s V DRM /V RRM to 0 400 to 600 V t q typical µs T J - 40 to 25 C Case Style TO-8AC (TO-65)
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, repetitive V RSM, maximum non- I DRM /I RRM Type number Code peak and off-state voltage () repetitive peak voltage (2) @ T J V V ma 50 0 300 40 400 500 60 600 700 50RIA 0 0 5 0 0 300 40 400 500 60 600 700 () Units may be broken over non-repetitively in the off-state direction without damage, if di/dt does not exceed A/µs (2) For voltage pulses with t p 5ms On-state Conduction 50RIA Parameter to 40 to 60 Units Conditions I T(AV) Max. average on-state current 50 50 A sinusoidal conduction @ Case temperature 94 C I T(RMS) Max. RMS on-state current A I TSM Max. peak, one-cycle 430 0 A t = ms No voltage non-repetitive surge current 4 257 t = 8.3ms reapplied 0 t = ms % V RRM 255 57 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing.8 7.2 KA 2 s t = ms No voltage Initial T J 9.30 6.58 t = 8.3ms reapplied 7. 5. t = ms % V RRM 6.56 4.65 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing.8 72. KA 2 s t = 0. to ms, no voltage reapplied, T J V T(TO) Low level value of threshold 0.94.02 V (6.7% x π x I T(AV) < I < π x I T(AV) ), T J voltage V T(TO)2 High level value of threshold.08.7 (π x I T(AV) < I < x π x I T(AV) ), T J voltage r t Low level value of on-state 4.08 4.78 mω (6.7% x π x I T(AV) < I < π x I T(AV) ), T J slope resistance r t2 High level value of on-state 3.34 3.97 (π x I T(AV) < I < x π x I T(AV) ), T J slope resistance V TM Max. on-state voltage.60.78 V I pk = 57 A, T J = 25 C I H Maximum holding current 0 ma T J = 25 C. Anode supply 22V, resistive load, Initial I T = 2A I L Latching current 400 Anode supply 6V, resistive load 2
Switching Parameter 50RIA Units Conditions di/dt Max. rate of rise of turned-on T C = 25 C, V DM = rated V DRM current V DRM 600V 0 A/µs Gate pulse = V, 5Ω, t p = 6µs, t r = 0.µs V DRM 600V I TM = (2x rated di/dt) A t d Typical delay time 0.9 T C = 25 C V DM = rated V DRM I TM = A dc resistive circuit µs Gate pulse = V, 5Ω source, t p = µs t q Typical turn-off time T C = 25 C, I TM = 50A, reapplied dv/dt = V/µs dir/dt = -A/µs, V R =50V Blocking Parameter 50RIA Units Conditions dv/dt Max. critical rate of rise of 0 T J linear to % rated V DRM V/µs off-state voltage 500 (*) T J linear to 67% rated V DRM (*) Available with dv/dt = 0V/µs, to complete code add S i.e. 50RIA60S. Triggering Parameter 50RIA Units Conditions P GM Maximum peak gate power T J max, t p 5ms P G(AV) Maximum average gate power 2.5 W I GM Max. peak positive gate current 2.5 A +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage V I GT DC gate current required 250 T J = - 40 C to trigger ma T J = 25 C Max. required gate trigger current/voltage are the 50 T J = 25 C lowest value which will trigger V GT DC gate voltage required 3.5 T J = - 40 C all units 6V anode-to-cathode applied to trigger 2.5 V T J = 25 C I GD DC gate current not to trigger 5.0 ma T J max V DRM = rated voltage V GD DC gate voltage not to trigger 0.2 V T J max Max. gate current/ voltage not to trigger is the value which will not trigger any unit with rated V DRM anode-to-cathode applied 3
Thermal and Mechanical Specification Parameter 50RIA Units Conditions T J Max. operating temperature range - 40 to 25 C T stg Max. storage temperature range - 40 to 25 C R thjc Max. thermal resistance, 0.35 K/W DC operation junction to case R thcs Max. thermal resistance, 0.25 K/W Mounting surface, smooth, flat and greased case to heatsink T Mounting torque Min. 2.8 (25) Nm Non-lubricated threads Max. 3.4 (30) (lbf-in) wt Approximate weight 28 (.0) g (oz) Case style TO-8AC (TO-65) See Outline Table R thjc Conduction (The following table shows the increment of thermal resistence R thjc when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions 0.078 0.057 K/W T J 0.094 0.098 0. 0.30 0.76 0.83 0.294 0.296 Ordering Information Table Device Code 50 RIA 60 S M 2 3 4 5 - Current code 2 - Essential part number 3 - Voltage code: Code x = V RRM (See Voltage Rating Table) 4 - Critical dv/dt: None = 500V/µs (Standard value) S = 0V/µs (Special selection) 5 - None = Stud base TO-8AC (TO-65) /4" 28UNF-2A M = Stud base TO-8AC (TO-65) M6 X 4
Outline Table Case Style TO-8AC (TO-65) All dimensions in millimeters (inches) Maximum Allowable Case Temperature ( C) 30 (V to 0V) R thjc (DC) = 0.35 K/W Conduction Angle 0 30 40 50 60 Maximum Allowable Case Temperature ( C) 30 (V to 0V) R thjc (DC) = 0.35 K/W Conduction Period DC 0 30 40 50 60 70 Fig. - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic 5
Maximum Average On-state Power Loss (W) 70 60 50 40 30 RMS Limit Conduction Angle (V to 0V) T J = 25 C 0 0 30 40 50 Maximum Average On-state Power Loss (W) 70 60 50 40 30 DC RMS Limit Conduction Period (V to 0V) T J = 25 C 0 0 30 40 50 60 70 Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 300 0 0 0 0 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 25 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 700 (V to 0V) 600 Peak Half Sine Wave On-state Current (A) 500 400 300 0 0 0 0 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied 700 600 (V to 0V) 500 0.0 0. Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Maximum Allowable Case Temperature ( C) 30 (400V to 600V) R thjc (DC) = 0.35 K/W Conduction Angle 0 5 5 25 30 35 40 45 50 55 Maximum Allowable Case Temperature ( C) 30 (400V to 600V) R thjc (DC) = 0.35 K/W Conduction Period DC 0 30 40 50 60 70 Fig. 7 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics 6
Maximum Average On-state Power Loss (W) 70 60 50 40 30 RMS Limit Conduction Angle (400V to 600V) T J = 25 C 0 0 5 5 25 30 35 40 45 50 Maximum Average On-state Power Loss (W) DC 70 60 RMS Limit 50 40 Conduction Period 30 (400V to 600V) T J = 25 C 0 0 30 40 50 60 70 Fig. 9 - On-state Power Loss Characteristics Fig. - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 0 0 0 700 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 25 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 600 (400V to 600V) 500 Peak Half Sine Wave On-state Current (A) 0 0 0 0 700 600 500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied (400V to 600V) 400 0.0 0. Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. - Maximum Non-Repetitive Surge Current Fig. 2 - Maximum Non-Repetitive Surge Current 0 0 Instantaneous On-state Current (A) T = 25 C J T = 25 C J (V to 0V) Instantaneous On-state Current (A) T = 25 C J T = 25 C J (400V to 600V) 0.5.5 2 2.5 3 3.5 4 4.5 0.5.5 2 2.5 3 3.5 4 4.5 5 5.5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 3 - Forward Voltage Drop Characteristics Fig. 4 - Forward Voltage Drop Characteristics 7
Transient Thermal Impedance Z thj-hs (K/W) Steady State Value R thj-hs = 0.35 K/W 0. 0.0 0.00 0.0 0. Square Wave Pulse Duration (s) Fig. 5 - Thermal Impedance Z thjc Characteristics Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : V, 30 ohms; tr<=0.5 µs b) Recommended load line for <=30% rated di/dt : V, 65 ohms tr<= µs (b) (a) Tj=25 C Tj=-40 C Tj=25 C () (2) VGD IGD Frequency Limited by PG(AV) 0. 0.00 0.0 0. 0 Instantaneous Gate Current (A) () PGM = W, tp = 5ms (2) PGM = W, tp = 2.5ms (3) PGM = 50W, tp = ms (4) PGM = W, tp = 500µs (3) (4) Fig. 6 - Gate Characteristics 8
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.