BRB6CT, BR6CT, NRVBB6CTT Switch mode Power Rectifiers TO 2/D 2 PK Surface ount Power Package These state-of-the-art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. eatures Package Designed for Power Surface ount pplications (D 2 PK) Center-Tap Configuration (D 2 PK) uardring for Stress Protection ow orward Voltage 75 C Operating Junction Temperature Epoxy eets U 9 V @.25 in Short Heat Sink Tab anufactured Not Sheared (D 2 PK) Similar in Size to Industry Standard TO 2 Package NRVBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These are Pb ree Devices echanical Characteristics: Case: Epoxy, olded, Epoxy eets U 9 V Weight:.7 rams (pproximately) D 2 PK,.9 rams (pproximately) TO 2 inish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead and ounting Surface Temperature for Soldering Purposes: 26 C ax. for Seconds (D 2 PK) Device eets S Requirements (D 2 PK) ESD Ratings: achine odel = C (> V) Human Body odel = B (> 8 V) SCHOTTKY BRRIER RECTIIERS PERES, 6 VOTS D 2 PK CSE 8B STYE B6 K RKIN DIRS Y WW Y WW B6 K TO 2 CSE 22 STYE 6 = ssembly ocation = Year = Work Week = Device Code = Pb ree Package = Diode Polarity Y WW B6 K ORDERIN INORTION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, C, September, Rev. Publication Order Number: BRB6CT/D
BRB6CT, BR6CT, NRVBB6CTT XIU RTINS (Per eg) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Symbol Value Unit V RR 6 V V RW V R verage Rectified orward Current (Rated V R, T C = C) Total Device Peak Repetitive orward Current (Rated V R, Square Wave, khz, T C = C) Non-Repetitive Peak Surge Current (Surge pplied at Rated oad Conditions Halfwave, Single Phase, 6 Hz) I (V) I R I S 5 Peak Repetitive Reverse Surge Current (2. s,. khz) I RR.5 Storage Temperature Range T stg 65 to +75 C Operating Junction Temperature (Note ) T J 65 to +75 C Voltage Rate of Change (Rated V R ) dv/dt, V/ s Stresses exceeding those listed in the aximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < /R J. THER CHRCTERISTICS (Per eg) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case Junction to mbient (Note 2) BRB6CT Junction to mbient (Note 2) BR6CT R JC R J R J 2. 5 6 C/W 2. When mounted using minimum recommended pad size on R board. EECTRIC CHRCTERISTICS (Per eg) Characteristic Symbol Value Unit aximum Instantaneous orward Voltage (Note ) v V (i = mps, T J = 25 C) (i = mps, T J = 25 C).85.95 aximum Instantaneous Reverse Current (Note ) (Rated dc Voltage, T J = 25 C) (Rated dc Voltage, T J = 25 C) i R 5.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Pulse Test: Pulse Width = s, Duty Cycle 2.%. ORDERIN INORTION BRB6CT BRB6CTT NRVBB6CTT* BR6CT Device Package Shipping D 2 PK D 2 PK D 2 PK TO 2 5 Units / Rail 8 Units / Tape & Reel 8 Units / Tape & Reel 5 Units / Rail or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NRVBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable m 2
I BRB6CT, BR6CT, NRVBB6CTT i, INSTNTNEOUS ORWRD CURRENT (PS) 5 5.5 25 C 5 C C T J = 25 C....2...5.6.7.8.9 v, INSTNTNEOUS VOTE (VOTS) igure. Typical orward Voltage Per Diode I R, REVERSE CURRENT (m) T J = 5 C T J = 25 C T J = C T J = 25 C 6 8 V R, REVERSE VOTE (VOTS) igure 2. Typical Reverse Current Per Diode (V), VERE ORWRD CURRENT (PS) 5 5. 8 dc SQURE WVE RTED VOTE PPIED R JC = 2 C/W 6 T C, CSE TEPERTURE ( C) igure. Typical Current Derating, Case, Per eg 8 VERE POWER (WTTS) 8 6 2 8 6 2 T J = 25 C I PK /I V = I PK /I V = I PK /I V = 5 2 6 8 2 6 8 DC VERE CURRENT (PS) igure. verage Power Dissipation and verage Current PI SQURE WVE
BRB6CT, BR6CT, NRVBB6CTT PCKE DIENSIONS D 2 PK CSE 8B ISSUE K T SETIN PNE B 2 VRIBE CONIURTION ZONE S D P. (.5) T R B K C H N E V W W J U P NOTES:. DIENSIONIN ND TOERNCIN PER NSI Y.5, 982. 2. CONTROIN DIENSION: INCH.. 8B THRU 8B OBSOETE, NEW STNDRD 8B. INCHES IIETERS DI IN X IN X..8 8.6 9.65 B.8.5 9.65.29 C.6.9.6.8 D..5.5.89 E.5.55....5 7.87 8.89. BSC 2.5 BSC H.8. 2. 2.79 J.8.25.6.6 K.9. 2.29 2.79.52.72.2.8.28. 7. 8. N.97 RE 5. RE P.79 RE 2. RE R.9 RE.99 RE S.575.625.6 5.88 V.5.55.. STYE : PIN. NODE 2. CTHODE. NODE. CTHODE VIEW W W VIEW W W VIEW W W 2 SODERIN OOTPRINT*.9 8.8 6.55 2X.5 2X.6 5.8 PITCH DIENSIONS: IIETERS *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D.
BRB6CT, BR6CT, NRVBB6CTT PCKE DIENSIONS TO 2 CSE 22 9 ISSUE H H Q Z V B 2 N D K T U S R J C T SETIN PNE NOTES:. DIENSIONIN ND TOERNCIN PER NSI Y.5, 982. 2. CONTROIN DIENSION: INCH.. DIENSION Z DEINES ZONE WHERE BODY ND ED IRREURITIES RE OWED. INCHES IIETERS DI IN X IN X.57.6.8 5.75 B.8.5 9.66.5 C.6.9.7.8 D.25.8.6.96.2.6.6.9.95.5 2.2 2.66 H..6 2.8. J..2.6.6 K.5.562 2.7.27.5.6.5.52 N.9.2.8 5. Q.. 2.5. R.8. 2. 2.79 S.5.55.5.9 T.25.255 5.97 6.7 U..5..27 V.5 ---.5 --- Z ---.8 --- 2. STYE 6: PIN. NODE 2. CTHODE. NODE. CTHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, C (SCIC) or its subsidiaries in the United States and/or other countries. SCIC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCIC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent arking.pdf. SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERIN INORTION ITERTURE UIENT: iterature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 US Phone: 675 275 or 8 86 Toll ree US/Canada ax: 675 276 or 8 867 Toll ree US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 8 282 9855 Toll ree US/Canada Europe, iddle East and frica Technical Support: Phone: 2 79 29 Japan Customer ocus Center Phone: 8 587 5 5 ON Semiconductor Website: www.onsemi.com Order iterature: http://www.onsemi.com/orderlit or additional information, please contact your local Sales Representative BRB6CT/D