N-channel 30 V, Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.

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Transcription:

N-channel 30 V, 0.0016 Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D STL160NS3LLH7 30 V 0.0021 Ω 160 A 1 2 3 4 PowerFLAT 5x6 Very low on-resistance Very low Q g High avalanche ruggedness Embedded Schottky diode Applications Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 6 5 Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. G(4) S(1, 2, 3) 1 2 3 4 Top View AM15540v3 Table 1. Device summary Order code Marking Package Packaging STL160NS3LLH7 160NS3LL PowerFLAT TM 5x6 Tape and reel July 2014 DocID024783 Rev 4 1/15 This is information on a product in full production. www.st.com 15

Contents STL160NS3LLH7 Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................ 6 3 Test circuits.............................................. 8 4 Package mechanical data..................................... 9 5 Packaging mechanical data.................................. 12 6 Revision history........................................... 14 2/15 DocID024783 Rev 4

Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 30 V V GS Gate-source voltage ± 20 V (1) I D Drain current (continuous) at T C = 25 C 160 A I (1) D Drain current (continuous) at T C = 100 C 115 A I (1)(2) DM Drain current (pulsed) 640 A I (3) D Drain current (continuous) at T pcb = 25 C 36 A (3) I D Drain current (continuous) at T pcb = 100 C 26 A I (2)(3) DM Drain current (pulsed) 144 A (1) P TOT Total dissipation at T C = 25 C 84 W P (3) TOT Total dissipation at T pcb = 25 C 4 W E (4) AS Single pulse avalanche energy 200 mj T j Operating junction temperature C -55 to 150 T stg Storage temperature C 1. This value is rated according to R thj-c 2. Pulse width limited by safe operating area 3. This value is rated according to R thj-pcb 4. L=1 mh, I D =20 A, V DD =25 V Table 3. Thermal data Symbol Parameter Value Unit (1) R thj-pcb Thermal resistance junction-pcb max 31.3 C/W R thj-case Thermal resistance junction-case max 1.5 C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec DocID024783 Rev 4 3/15

Electrical characteristics STL160NS3LLH7 2 Electrical characteristics (T C = 25 C unless otherwise specified). Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current V GS = 0, I D = 1 ma 30 V V GS = 0, V DS = 24 V 500 µa I GSS Gate-body leakage current V DS = 0, V GS = ± 20 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 1 ma 1.2 2.3 V R DS(on) Static drain-source on-resistance V GS = 10 V, I D = 18 A 0.0016 0.0021 Ω V GS = 4.5 V, I D = 18 A 0.0025 0.0031 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance - 3245 - pf C oss Output capacitance V GS = 0, V DS = 25 V, f = 1 MHz - 970 - pf C rss Reverse transfer capacitance - 52 - pf Q g Total gate charge V DD = 15 V, I D = 36 A, - 20 - nc Q gs Gate-source charge V GS = 4.5 V - 9.3 - nc Q gd Gate-drain charge (see Figure 13) - 5.7 - nc Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 12.4 - ns t r Rise time V DD = 15 V, I D = 18 A, - 21.3 - ns t d(off) Turn-off delay time R G = 4.7 Ω, V GS = 4.5 V - 50.7 - ns t f Fall time - 19.5 - ns 4/15 DocID024783 Rev 4

Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 120 A I (1) SDM Source-drain current (pulsed) - 480 A V (2) SD Forward on voltage V GS = 0, I SD = 2 A - 0.4 0.7 V t rr Reverse recovery time - 46 ns Q rr Reverse recovery charge V GS = 0 V, I D = 36 A, di/dt = 100 A/µs - 46 nc I RRM Reverse recovery current - 2 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024783 Rev 4 5/15

Electrical characteristics STL160NS3LLH7 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance 6/15 DocID024783 Rev 4

Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized V (BR)DSS vs temperature DocID024783 Rev 4 7/15

Test circuits STL160NS3LLH7 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit VDD VGS VD RG RL D.U.T. 2200 μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 14. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH 3.3 1000 μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/15 DocID024783 Rev 4

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID024783 Rev 4 9/15

Package mechanical data STL160NS3LLH7 Figure 18. PowerFLAT 5x6 type S-C mechanical data 10/15 DocID024783 Rev 4

Package mechanical data Table 8. PowerFLAT 5x6 type S-C mechanical data Dim. mm Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 0.50 D 5.20 D2 4.11 4.31 E 6.15 e 1.27 e1 0.65 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 K 1.05 1.35 L 0.715 1.015 Figure 19. PowerFLAT 5x6 recommended footprint (dimensions in mm) Footprint DocID024783 Rev 4 11/15

REF.R0.50 Packaging mechanical data STL160NS3LLH7 5 Packaging mechanical data Figure 20. PowerFLAT 5x6 tape (a) T (0.30 ±0.05) Do Ø1.55±0.05 Y P 2 2.0±0.1 (I) P 0 4.0±0.1 (II) E1 1.75±0.1 C L Bo (5.30±0.1) D1 Ø1.5 MIN. REF 0.20 F(5.50±0.1)(III) W(12.00±0.3) Y Ko (1.20±0.1) P1(8.00±0.1) Ao(6.30±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ± 0.20. (III) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs 8234350_Tape_rev_C Pin 1 identification Figure 21. PowerFLAT 5x6 package orientation in carrier tape a. All dimensions are in millimeters. 12/15 DocID024783 Rev 4

Packaging mechanical data Figure 22. PowerFLAT 5x6 reel R0.60 PART NO. 1.90 2.50 W3 11.9/15.4 W2 18.4 (max) R25.00 4.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES A 330 (+0/-4.0) 2.50 77 ESD LOGO 06 PS ØA W1 12.4 (+2/-0) 128 R1.10 Ø21.2 2.20 13.00 All dimensions are in millimeters CORE DETAIL 8234350_Reel_rev_C DocID024783 Rev 4 13/15

Revision history STL160NS3LLH7 6 Revision history Table 9. Document revision history Date Revision Changes 11-Jun-2013 1 First release. 26-May-2014 2 18-Jun-2014 3 24-Jul-2014 4 Document status promoted from target to production data Modified: T J value in Table 2 Modified: the entire typical values in Table 5, 6, 7 Added: Section 2.1: Electrical characteristics (curves) Updated: Section 4: Package mechanical data Minor text changes Added: E AS value in Table 2 Updated: Section 4: Package mechanical data Minor text changes Modified: title and features Modified: P TOT values in Table 2 Modified: I SD and I SDM max values in Table 7 Minor text changes 14/15 DocID024783 Rev 4

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2014 STMicroelectronics All rights reserved DocID024783 Rev 4 15/15