N-channel 30 V, Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.

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N-channel 30 V, 0.0027 Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D 30 V 0.0034 Ω 120 A Very low on-resistance 1 2 3 4 PowerFLAT 5x6 Very low Q g High avalanche ruggedness Embedded Schottky diode Applications Switching applications Figure 1. Internal schematic diagram Description D(5, 6, 7, 8) 8 7 6 5 This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. G(4) S(1, 2, 3) 1 2 3 4 Top View AM15540v3 Table 1. Device summary Order code Marking Package Packing 110NS3LL PowerFLAT TM 5x6 Tape and reel April 2015 DocID024570 Rev 4 1/14 This is information on a product in full production. This is information on a product in full production. www.st.com

Contents Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................. 6 3 Test circuits.............................................. 8 4 Package information......................................... 9 4.1 PowerFLAT 5x6 type C package information..................... 9 4.2 Packing information..........................................11 5 Revision history........................................... 13 2/14 DocID024570 Rev 4

Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 30 V V GS Gate-source voltage ±20 V I D (1) I DM (1)(2) Drain current (continuous) 120 A Drain current (continuous) at T C = 100 C 75 Drain current (pulsed) 480 A I D (3) Drain current (continuous) 28 Drain current (continuous) at T pcb = 100 C 17.5 A I DM (2)(3) Drain current (pulsed) 112 A P TOT Total dissipation at T C = 25 C 75 (1) W Total dissipation at T pcb = 25 C 4 (3) T stg T j Storage temperature Operating junction temperature -55 to 150 C 1. This value is rated according to R thj-c 2. Pulse width limited by safe operating area. 3. This value is rated according to R thj-pcb Table 3. Thermal data Symbol Parameter Value Unit R thj-pcb (1) Thermal resistance junction-pcb max 31.3 C/W R thj-case Thermal resistance junction-case max 1.65 C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec DocID024570 Rev 4 3/14 14

Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current I D = 1 ma, V GS = 0 V 30 V V GS = 0 V V DS = 24 V 500 µa I GSS Gate-body leakage current V GS = ± 20 V, V DS = 0 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 1 ma 1.2 2.3 V R DS(on) Static drain-source on-resistance V GS = 10 V, I D = 14 A 0.0027 0.0034 Ω V GS = 4.5 V, I D = 14 A 0.004 0.005 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance - 2110 - pf C oss Output capacitance V DS = 25 V, f = 1 MHz, - 640 - pf C rss V GS = 0 V Reverse transfer capacitance - 42 - pf Q g Total gate charge V DD = 15 V, I D = 28 A, - 13.7 - nc Q gs Gate-source charge V GS = 4.5 V - 7.5 - nc Q gd Gate-drain charge (see Figure 11) - 3.3 - nc Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 26.4 - ns t r Rise time V DD = 15 V, I D = 14 A, - 10.4 - ns t d(off) Turn-off delay time R G = 4.7 Ω, V GS = 4.5 V - 31.8 - ns t f Fall time - 12.5 - ns 4/14 DocID024570 Rev 4

Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit V (1) SD Forward on voltage I SD = 2 A, V GS = 0 V - 0.4 0.7 V t rr Reverse recovery time - 35.2 ns Q rr Reverse recovery charge I D = 2 A, di/dt = 100 A/µs V DD = 20 V - 26.4 nc I RRM Reverse recovery current - 1.5 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024570 Rev 4 5/14 14

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Gate charge vs gate-source voltage Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on-resistance 6/14 DocID024570 Rev 4

Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized on-resistance vs temperature DocID024570 Rev 4 7/14 14

Test circuits 3 Test circuits Figure 10. Switching times test circuit for resistive load Figure 11. Gate charge test circuit VDD VGS VD RG RL D.U.T. 2200 μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 12. Test circuit for inductive load switching and diode recovery times Figure 13. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH 3.3 1000 μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 14. Unclamped inductive waveform VD V(BR)DSS Figure 15. Switching time waveform ton toff tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/14 DocID024570 Rev 4

Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 PowerFLAT 5x6 type C package information Figure 16. PowerFLAT 5x6 type C outline DocID024570 Rev 4 9/14 14

Package information Table 8. PowerFLAT 5x6 type C mechanical data Dim. mm Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 Figure 17. PowerFLAT 5x6 recommended footprint (dimensions in mm) 10/14 DocID024570 Rev 4

REF.R0.50 Package information 4.2 Packing information Figure 18. PowerFLAT 5x6 tape (a) T (0.30 ±0.05) Do Ø1.55±0.05 Y P 2 2.0±0.1 (I) P 0 4.0±0.1 (II) E1 1.75±0.1 C L Bo (5.30±0.1) D1 Ø1.5 MIN. REF 0.20 F(5.50±0.1)(III) W(12.00±0.3) Y Ko (1.20±0.1) P1(8.00±0.1) Ao(6.30±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ± 0.20. (III) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs 8234350_Tape_rev_C Pin 1 identification Figure 19. PowerFLAT 5x6 package orientation in carrier tape a. All dimensions are in millimeters. DocID024570 Rev 4 11/14 14

Package information Figure 20. PowerFLAT 5x6 reel R0.60 PART NO. 1.90 2.50 W3 11.9/15.4 W2 18.4 (max) R25.00 4.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES A 330 (+0/-4.0) 2.50 77 ESD LOGO 06 PS ØA W1 12.4 (+2/-0) 128 R1.10 Ø21.2 2.20 13.00 All dimensions are in millimeters CORE DETAIL 8234350_Reel_rev_C 12/14 DocID024570 Rev 4

Revision history 5 Revision history Table 9. Document revision history Date Revision Changes 22-Apr-2013 1 First release. 11-Jun-2013 2 01-Apr-2015 3 Changed: Description Minor text changes Minor text edits throughout document On cover page: updated product description updated features table and features list In Section 1: Electrical ratings: updated Table 2 and Table 3 In Section 2: Electrical characteristics: updated Table 7 Added Section 2.1: Electrical characteristics (curves) Updated Section 4: Package information 10-Apr-2015 4 Promoted document from Preliminary data to Production data DocID024570 Rev 4 13/14 14

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