TQM7M5003. Quad-Band GSM/EDGE Polar Power Amplifier Module. Functional Block Diagram. Features. Product Description

Similar documents
TQM7M6001 Advance Data Sheet

TQP Preliminary Data Sheet

TQM7M5013 Quad-Band Input Power Controlled EDGE PAM

TQM Advance Data Sheet

TQM7M9023 Data Sheet. 5.0x7.5mm Multimode Multiband Power Amplifier (MMPA) (Quad-Band GSM / EDGE and Tri-band W/CDMA/HSPA+/LTE)

TQM679002A Data Sheet

AWT6280 Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control AWT6280R

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.

NZ5560 Quad-Band GSM/EDGE & Dual-Band TD-SCDMA Frond End Module with Six TRx Ports

TGV2561-SM GHz VCO with Divide by 2

TQM626028L Data Sheet

TQM BC1/B2 BAW Duplexer

TQP DC 6 GHz Gain Block

QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.3 to +6.0 V Power Control Voltage (V RAMP ) -0.3 to +1.8 V Input RF Power +10 dbm Max

TQM Data Sheet. CDMA Cellular Band PA/Duplexer Module. Functional Block Diagram

VCC RF_OUT CPL_IN GND CPL_OUT

NZ5524 Quad-Band GSM/GPRS Frond End Module with Four TRx Ports

TQM EVB B7 BAW Duplexer

QPQ1237TR7. LTE B3/B7 BAW Diplexer (75MHz/70MHz) Product Overview. Key Features. Functional Block Diagram. Applications.

AWT6132R 415 MHz CDMA 3.4V/29.5dBm

TGL2201-SM T/R. Wideband Dual Stage VPIN Limiter. Applications. Ordering Information. Part No. ECCN Description

TQQ MHz LTE Band 7 Uplink BAW Filter

TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information

TQQ MHz LTE Band 7 Uplink BAW Filter

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

TQQ MHz LTE Band 3 Uplink BAW Filter

RF3241SR. RF3241 Quad-Band GSM, Polar EDGE Transmit Module, Six UMTS TRX Switch Ports

Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier

ECG055B-G InGaP HBT Gain Block

RFSW1012SR. Broadband SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Ordering Information

QPL7210TR7. 2.4GHz Wi-Fi LNA+BAW Receive Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TQM EVB. Not for New Designs BC14/BC1/B25 BAW Duplexer. Applications. Functional Block Diagram. Product Features. General Description

Absolute Maximum Ratings Parameter Rating Unit Supply Voltage in Standby Mode -0.5 to +6.0 V Supply Voltage in Idle Mode -0.5 to +6.0 V Supply Voltage

AWB7138: 791 to 821 MHz Small-Cell Power Amplifier Module

TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information

AWT6307R HELP2 TM Cellular CDMA 3.4 V/28 dbm Linear Power Amplifier Module Data Sheet - Rev 2.1

TGA4533-SM K-Band Power Amplifier

TQP3M9035 High Linearity LNA Gain Block

TQP DC-6 GHz Gain Block

AWT6308R HELP2 TM PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module Data Sheet - Rev 2.3

TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description

AWT MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module DATA SHEET - Rev 2.0

Ultra-linear Mixer with Integrated IF Amp and LO Buffer

TQP DC-6 GHz Gain Block

RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Product Specification PE42851

QPA4501SR. 3 W, 28 V, GHz GaN PA Module. Product Overview. Key Features. Functional Block Diagram Applications. Ordering Information

WJA V Active-Bias InGaP HBT Gain Block

TQQ7399 DC 2700 MHz Through Line

AWB7238: 791 to 821 MHz Small-Cell Power Amplifier Module

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description

TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

SGA-6489 SGA-6489Z Pb

AWB7127: 2.11 to 2.17 GHz Small-Cell Power Amplifier Module

AWT6241 HELP3 TM IMT/UMTS 3.4 V/28.5 dbm Linear Power Amplifier Module DATA SHEET - Rev 2.0

Product Specification PE42850

PE42823 Document Category: Product Specification

TQP7M W High Linearity Amplifier. Applications. Ordering Information

GHz RF Front-End Module. o C

RFX8053: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT

TQP GHz 8W High Linearity Power Amplifier

T2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor

Data Sheet. ACMD-6003 UMTS Band 3 Duplexer. Features. Description. Specifications. Applications. Functional Block Diagram

QPB9325SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

Product Specification PE42821

TQQ1013 Band 13 SAW Duplexer

TQP Data Sheet. 2.4GHz ISM Band InGaP HBT Matched Power Amplifier. Functional Block Diagram. Features. Product Description

T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor

NZ5401 High Efficiency Power Amplifier Module UMTS Band 1 ( MHz)

TQP3M9008 High Linearity LNA Gain Block

Product Specification PE42540

RF V TO 4.0V,915MHz Transmit/Receive

RFX8050: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT

TQL5000 Data Sheet. LNA for 5 GHz UNII Band a Systems. Functional Block Diagram. Features. Applications. Product Description.

SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

TGA2710-SM 8W GHz Power Amplifier

DATA SHEET SE2567L: 5 GHz Power Amplifier with Power Detector Preliminary Information Applications Product Description Features Ordering Information

AWL /5 GHz a/b/g WLAN Power Amplifier Data Sheet - Rev 2.1

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty

Applications Ordering Information

dbm Output Power at 1dB Compression 3.6GHz

AWL5911. AWL a/n/ac 5 GHz Power Amplifer Product Definition PRELIMINARY DATA SHEET - Rev VCC1 VCC3 VCC2 GND GND GND GND GND GND PA_EN

QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information

SBB-1089 SBB-1089Z MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier

PE42412 Document Category: Product Specification

RFFM V to 4.0V, 450MHz to 470MHz Transmit/Receive Front End Module

TGA2704-SM 8W 9-11 GHz Power Amplifier

QPB9324SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPA W, 28 V, GHz GaN PA Module

QPA W, 28 V, GHz GaN PA Module

QPB3311SR. 15 db Return Path Amplifier MHz. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPD W, 48 V GHz GaN RF Power Transistor

PE42482 Document Category: Product Specification

DATA SHEET SE2604L: 2.4 GHz High Power Wireless LAN Power Amplifier. Product Description. Applications. Features. Ordering Information

PE42512 Document Category: Product Specification

PE42562 Document Category: Product Specification

AWB7230: 3.40 to 3.80 GHz Small-Cell Power Amplifier Module

PE42582 Document Category: Product Specification

Transcription:

11 Functional Block Diagram Product Description The is a small (7x7mm), GSM/EDGE PAM for handset applications. This module has been optimized for excellent EDGE efficiency, ACPR and EVM in an open loop polar modulation environment at EDGE class E2+ operation while maintaining high GSM/GPRS efficiency. The is fanout compatible with TriQuint s other power amplifier modules. High reliability is assured by utilizing TriQuint s 3rd generation InGaP HBT technology and by TriQuint s proven module design techniques. Electrical Specifications Features GSM/EDGE Multi-Mode Capability Optimized for Operation with Qualcomm s Multi-mode Chip Sets - 38dB Typical ACPR (200KHz) - 66dB Typical ACPR (400 KHz) - 76dB Typical ACPR (600 KHz) 1 Typical EVM rms > 50dB Typical Dynamic Range GPRS Class 12 Internally Matched Input and Output RoHS compliant, MSL3 260C Applications GSM/EDGE Handsets GSM/EDGE Wireless Cards and Data Links Package Style Package Size: LGA 7 x 7 x 1.1 mm Top View Parameter 850 Band 900 Band DCS Band PCS Band Min Typ Max Min Typ Max Min Typ Max Min Typ Max GSM Pout 34.5 35 34.5 35 32 33 32 33 Efficiency 43 51 50 56 42 50 45 53 Pin 0 3 6 0 3 6 0 3 6 0 3 6 EDGE Pout 29 29 28 28 Efficiency 19 23 20 24 22 25 26 29 ACPR (400KHz) -58-58 -58-58 Pin 0 3 6 0 3 6 0 3 6 0 3 6 1

22 Absolute Maximum Ratings Symbol Parameter Absolute Maximum Value Units VBATT Positive Supply Voltage -0.5 to +5.5 VDC VRAMP Power Control Voltage -0.3 to +2.5 VDC Duty Cycle at Maximum Power 50 TSTG Storage Temperature -55 to +150 C TC Operating Case Temperature -30 to +85 C PI Maximum Input Power +11.5 dbm Note: The part may not survive all maximums applied simultaneously. Operating Parameters Parameter Conditions Min. Typ/Nom Max. Units Supply Voltage, VBATT 3.0 3.5 4.8 Vdc Transmit Enable, TX_EN Voltage Logic High 1.25 3 V Logic Low -0.2 0.4 V Transmit Enable, TX_EN Current Logic High 10 µa Logic Low 1 µa Band Select Voltage Logic High: DCS Logic Low: GSM 1.25-0.2 3 0.4 V V Band Select Current- DCS/GSM High/Low 10 µa Leakage Current TX_EN Low Vramp = 0.2V; T=-25 C, +85 C 5 15 µa Input and Output Load Impedance 50 Vramp MIN 0 0.25 V Vramp 0 1.6 V Vramp Input Current Vramp = 0.2V, 1.6V 10 µa Operating Case Temperature -25 +85 C 2

33 Low Band General Characteristics Standard Conditions: BS = L, VBATT = 3.5V, VRAMP = 1.6V, PIN = 3 dbm, TX_EN = H, TC = 25 C, Duty Cycle = 25 Parameter Conditions Min. Typ/Nom Max. Units Input VSWR 2.5:1 Stability All Spurs < -36dBm; TC = 25ºC 8:1 Ruggedness Continuous operations No Permanent Damage to Device, TC = 25ºC No Permanent Damage under forced 3.0A continuous 10:1 6:1 operations for 30min (Pout cal in 50Ohm = 35.0dBm) Harmonics 2fo -20-10 dbm 3fo, 4fo -25-10 dbm 5fo 8fo -15 dbm Rx Band Noise Standard Conditions (except Pin=2dBm, Duty Cycle=12.5) 869 f 894-84.5-82.5 dbm 925 < f < 935-77 -74 dbm 935 f 960-84.5-82.5 dbm Cross Band Isolation BS = L; 1710 f 1785-25 dbm (power at DCS when EGSM is active) Off Isolation 1 TX_EN = L -35-30 dbm Off Isolation 2 TX_EN = H; VRAMP = 0.23V -16 dbm Power Control Range 51 db TX_EN Switching Time 2 µs Rise Time from POUT = -30dBm to POUT = PMAX 1 µs Fall Time from POUT = -30dBm to POUT = PMAX 1 µs ESD CDM per JESD22-C101 500 V HBM per JESD22-A114-B 500 V IBATT Vramp=1.6V 1.8 2.3 A 3

44 Low Band GMSK Characteristics Standard Conditions: BS = L, VBATT = 3.5V, VRAMP = 1.6V, PIN = 3 dbm, TX_EN = H, TC = 25 C, Duty Cycle = 25 Parameter Conditions Min. Typ/Nom Max. Units Frequency Range- f 824 880 849 915 Input Power for Pout max.- PIN 0 3 6 dbm Output Power- POUT 34.5 35 dbm Output Power Degradation VBATT = 3.0V, PIN = PIN MIN, TMIN < TC < TMAX 32.5 dbm Power Added Efficiency- 824 849, POUT = POUT MAX 880 915, POUT = POUT MAX 43 50 51 56 Low Band 8PSK Characteristics Standard Conditions: BS = L, VBATT = 3.5V, VRAMP = 1.6V, PIN = 3 dbm, TX_EN = H, TC = 25 C, Duty Cycle = 25 Parameter Conditions Min. Typ/Nom Max. Units Frequency Range- f 824 880 849 915 Input Power for Pout max.- PIN 0 3 6 dbm Power Added Efficiency- 824 849, VRAMP adjusted for POUT = 29dBm 880 915, VRAMP adjusted for POUT = 29dBm 19 20 23 24 ACPR 200 khz 400 khz 600 khz 1800 khz In TriQuint EDGE Polar Emulator; POUT = 29dBm -34-58 -64-68 dbc/30khz dbc/30khz dbc/30khz dbc/100khz EVM rms In TriQuint EDGE Polar Emulator 1 5 4

55 High Band General Characteristics Standard Conditions: BS = H, VBATT = 3.5V, VRAMP = 1.6V, PIN = 3 dbm, TX_EN = H, TC = 25 C, Duty Cycle = 25 Parameter Conditions Min. Typ/Nom Max. Units Input VSWR 2.5:1 Stability All Spurs < -36dBm; T = 25ºC 8:1 Ruggedness No Permanent Damage to Device. T = 25ºC 10:1 Harmonics 2fo -20-10 dbm 3fo -25-10 dbm 4fo 8fo -10 dbm Rx Band Noise Standard Conditions (except Pin=2dBm, Duty Cycle=12.5) 1805 1880-82 -77 dbm 1930 1990-82 -77 dbm Off Isolation 1 TX_EN = L -35-30 dbm Off Isolation 2 TX_EN = H; VRAMP = 0.23V -20 Power Control Range 53 db TX_EN Switching Time 2 µs Rise Time (from POUT = -30dBm to POUT = PMAX) 1 µs Fall Time (from POUT = -30dBm to POUT = PMAX) 1 µs ESD CDM per JESD22-C101 500 V HBM per JESD22-A114-B 500 V IBATT Vramp=1.6V 1.1 1.7 A 5

66 High Band GMSK Mode Characteristics Standard Conditions: BS = H, VBATT = 3.5V, VRAMP = 1.6V, PIN = 3 dbm, TX_EN = H, TC = 25 C, Duty Cycle = 25 Parameter Conditions Min. Typ/Nom Max. Units Frequency Range- f 1710 1850 1785 1910 Input Power for Pout max.- PIN 0 3 6 dbm Output Power- POUT 32 33 dbm Output Power Degradation VBATT = 3.0V, PIN = PIN MIN, TMIN < TC < TMAX 30 dbm Power Added Efficiency- 1710 1785, POUT = POUT MAX 1850 1910, POUT = POUT MAX 42 45 50 53 High Band 8PSK Characteristics Standard Conditions: BS = H, VBATT = 3.5V, VRAMP = 1.6V, PIN = 3 dbm, TX_EN = H, TC = 25 C, Duty Cycle = 25 Parameter Conditions Min. Typ/Nom Max. Units Frequency Range- f 1710 1850 1785 1910 Input Power for Pout max.- Pin 0 3 6 dbm Power Added Efficiency- 1710 1785, VRAMP adjusted for POUT = 28dBm 1850 1910, VRAMP adjusted for POUT = 28dBm 22 26 25 29 ACPR 200 khz 400 khz 600 khz 1800 khz In TriQuint EDGE Polar Emulator; POUT = 28dBm -34-58 -64-68 dbc/30khz dbc/30khz dbc/30khz dbc/100khz EVM In TriQuint EDGE Polar Emulator 1 5 6

77 Pin-Out Diagram Pin Descriptions Pin # Description Function 1 DCS / PCS In DCS / PCS RF input 2 Band Select Band Select Pin (Low -> Low-Band mode active; High -> High-Band mode active) 3 Tx Enable Digital Transmit Enable Signal. When activated (TX_EN = high), all bands of the PA will be enabled for operation. 4 Vbatt Battery supply voltage 5 Ground 6 Vramp DAC Control Signal for output power setting, nominal 0.2.. 1.6 V 7 GSM In GSM RF Input 9 GSM Out GSM RF Output 12 Vcc Internal Voltage no external connection 15 DCS / PCS Out DCS / PCS RF output 8, 10, 11, 13, 14, 16, 17 Ground 7

88 Logic Table Operating Mode Band Select Tx Enable Vramp GMSK, High Band High High - Enabled 0.2 to 1.6 VDC Low - Disabled GMSK, Low Band Low High - Enabled 0.2 to 1.6 VDC Low - Disabled EDGE, Low Band Low High - Enabled 0.2 to 1.6 VDC Low - Disabled EDGE, High Band High High - Enabled 0.2 to 1.6 VDC Low - Disabled PA Off X Low X X-Don t Care 8

99 Typical Application / Test Circuit RF IN_HB RF OUT_HB BS TX EN V BATT C1 N/C R1 V RAMP RF IN_LB C2 RF OUT_LB Bill of Material for Power Amplifier Module Application/Test Circuit 1 Component Reference Part Value Size Designator Number Power Amplifier Module 17pin/7mm square Capacitor C1 220 F 1210 Resistor R1 None 0402 Capacitor C2 None 0402 Note 1: May vary due to printed circuit board layout and material 9

1010 PC Board Layout Recommendations METALIZATION SOLDERMASK Oversize pads 50um (2 MIL) per side Center ground is 100 of exposed module plane 10

1111 Package Dimensional Drawings Top View Side View Bottom View 11

1212 Tape and Reel* *Provided as informational only. Please request TriQuint PKG.075 for controlling documentation. Module Orientation Carrier and Cover Tape Physical Dimensions FIXED CARRIER AND COVER TAPE DIMENSIONS PART FEATURE SYMBOL SIZE (in) SIZE (mm) CAVITY BOTTOM HOLE DIAMETER D1 0.059 1.50 PERFORATION DIAMETER D0 0.059 1.50 PITCH P0 0.157 4.00 POSITION E1 0.069 1.75 CARRIER TAPE THICKNESS T 0.012 0.30 COVER TAPE THICKNESS T1 0.002 0.056 12

1313 Tape and Reel (continued) MODULE 7X7 CARRIER AND COVER TAPE DIMENSIONS PART FEATURE SYMBOL SIZE (in) SIZE (mm) CAVITY LENGTH A0 0.291 7.4 WIDTH B0 0.291 7.4 DEPTH K0 0.079 2.0 PITCH P1 0.472 12.00 DISTANCE CAVITY TO PERFORATION P2 0.079 2.00 BETWEEN CENTERLINE LENGTH DIRECTION CAVITY TO PERFORATION F 0.295 7.50 WIDTH DIRECTION COVER TAPE WIDTH C 0.524 13.30 CARRIER TAPE WIDTH W 0.630 16.00 Reel Physical Dimensions 13

1414 Tape and Reel (continued) Reel Dimensions for 16mm Carrier Tape SOIC-14, SOIC-16 BATWING, QSOP 24, SSOP-24, 13" REEL TSSOP-20, TSSOP-28 and HP VFQFP-N 7x7 and SOT 223. Modules 6X6,7X7, 8X8, 7X10, 5X9 and 9.55X8.75 PART FEATURE SYMBOL SIZE (in) SIZE (mm) FLANGE DIAMETER A 12.992 330.0 THICKNESS W2 0.874 22.2 SPACE BETWEEN FLANGE W1 0.661 16.8 HUB OUTER DIAMETER N 4.016 102.0 ARBOR HOLE DIAMETER C 0.512 13.0 KEY SLIT WIDTH B 0.079 2.0 KEY SLIT DIAMETER D 0.787 20.0 Tape Length Label Placement Product label, Mfg Label and ESD label are placed on the flange opposite to the sprockets in the carrier tape Reel Quantity: 2500 / reel 14

1515 Marking Diagram* *Provided as informational only. Please request TriQuint MRK. for controlling documentation. WHITE INK OR LASER MARK Line 1: TriQuint logo Line 2: 7M5003 Line 3: CCCC = Country Code (example: Philippines = PHIL ) Line 4: YYWW = Year and Work Week Line 5: XXXX = Aa (2 letter vendor code) + Last 4 digits of TriQuint assembly lot number Additional Information 1 T This part is compliant with RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). The part is rated Moisture Sensitivity Level 3 at 260 C per JEDEC standard IPC/JEDEC J-STD-020. 1 For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: Hwww.triquint.comH Tel: (503) 615-9000 Email: info_wireless@tqs.com Fax: (503) 615-8902 For technical questions and additional information on specific applications: Email: info_wireless@tqs.com The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright 2006 TriQuint Semiconductor, Inc. All rights reserved. 15