C4D512 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 9.5 Q c = 27 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 TO-22-2 CSE pplications Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages C/DC converters Maximum Ratings (=25 C unless otherwise specified) Part Number Package Marking C4D512 TO-22-2 C4D512 Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 12 V SM Surge Peak Reverse Voltage 13 V DC Peak Reverse Voltage 12 V Continuous Forward Current 19 9.5 5 =25 =135 =161 Fig. 3 RM Repetitive Peak Forward Surge Current 26 18 =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse SM Non-Repetitive Forward Surge Current 46 36 =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse Fig. 8,Max Non-Repetitive Peak Forward Current 4 32 =1 ms, Pulse =11, t P =1 ms, Pulse Fig. 8 P tot Power Dissipation 1 43 W =25 =11 Fig. 4 dv/dt Diode dv/dt ruggedness 2 V/ns =-65V i 2 dt i 2 t value 1.6 6.5 2 s =1 ms =11, t P =1 ms Operating Junction Range -55 to +175 T stg Storage Temperature Range -55 to +135 TO-22 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw 1 C4D512 Rev. C, 9-216
Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F Forward Voltage 1.4 1.9 1.8 3 V = 5 =25 C = 5 Fig. 1 I R Reverse Current 2 4 15 3 μ = 12 V =25 C = 12 V Fig. 2 Q C Total Capacitive Charge 27 nc = 8 V, = 5 di/dt = 2 /μs Fig. 5 C Total Capacitance 39 27 2 pf = V,, f = 1 MHz = 4 V, = 25, f = 1 MHz = 8 V, = 25, f = 1 MHz Fig. 6 E C Capacitance Stored Energy 8. μj = 8 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case 1.5 C/W Fig. 9 Typical Performance 1 9 8 7 =-55 C = 75 C =125 C 1 9 8 7 Current I () F () 6 5 4 3 2 Current I (µ) R (μ) 6 5 4 3 2 =-55 C = 75 C =125 C 1 1.5 1 1.5 2 2.5 3 3.5 5 1 15 2 Voltage V F Voltage Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D512 Rev. C, 9-216
Typical Performance (peak) () 7 6 5 4 3 2 1 1% Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P Tot (W) 11. 1. 9. 8. 7. 6. 5. 4. 3. 2. 1. 25 5 75 1 125 15 175. 25 5 75 1 125 15 175 Figure 3. Current Derating Figure 4. Power Derating 35 45 3 4 35 25 3 Q c (nc) 2 15 1 5 C (pf) 25 2 15 1 5 2 4 6 8 1.1 1 1 1 1 Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D512 Rev. C, 9-216
Typical Performance 14. 1 12. E C (mj) E C Capacitive Energy (uj) 1. 8.8 6.6 4.4 SM IFSM() 1 _intial _intital = 11 C 2.2. 2 4 6 8 1 Reverse V Voltage R Figure 7. Typical Capacitance Stored Energy 1 1E-5 1.E-5 1E-4 1.E-4 1E-3 1.E-3 1E-2 1.E-2 tp(s) t p (s) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Junction Thermal To Case Resistance Impedance, (/W) Z thjc ( o C/W) 1 1E-3.5.3.1.5.2.1 SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, T (Sec) t p (s) Figure 9. Transient Thermal Impedance 4 C4D512 Rev. C, 9-216
Package Dimensions Package TO-22-2 PIN 1 PIN 2 CSE POS Inches Millimeters Min Max Min Max.381.41 9.677 1.414 B.235.255 5.969 6.477 C.1.12 2.54 3.48 D.223.337 5.664 8.56 D1.457-.49 11.6-12.45 typ D2.277-.33 typ 7.4-7.7 typ D3.244-.252 typ 6.22-6.4 typ E.59.615 14.986 15.621 E1.32.326 7.68 8.28 E2.227 251 5.77 6.37 F.143.153 3.632 3.886 G 1.15 1.147 28.67 29.134 H.5.55 12.7 13.97 L.25.36.635.914 M.45.55 1.143 1.55 N.195.25 4.953 5.27 P.165.185 4.191 4.699 Q.48.54 1.219 1.372 S 3 6 3 6 T 3 6 3 6 U 3 6 3 6 V.94.11 2.388 2.794 W.14.25.356.635 X 3 5.5 3 5.5 Y.385.41 9.779 1.414 z.13.15 3.32 3.81 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-22-2 Part Number Package Marking C4D512 TO-22-2 C4D512 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D512 Rev. C, 9-216
Diode Model Vf = V + If * R T T V T =.96 + (T j * -1.22*1-3 ) R T =.8 + (T j * 8.5*1-4 ) T Note: T j is diode junction temperature in degrees Celsius Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/11562/215-7-31/349i Copyright 216 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 6 C4D512 Rev. C, 9-216