SPN6435. Dual N-Channel Enhancement Mode MOSFET

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DESCRIPTION The SPN6435 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays FEATURES PIN CONFIGURATION ( SOT-363 / SC-70-6L ) 40V/0.30A, RDS(ON)= 4.0Ω@VGS=10V 40V/0.20A, RDS(ON)= 5.0Ω@VGS=5.0V 40V/0.02A, RDS(ON)= 10.0Ω@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design PART MARKING 2010/12/17 Ver.3 Page 1

PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 D2 Drain 2 4 S2 Source 2 5 G2 Gate 2 6 D1 Drain1 ORDERING INFORMATION Part Number Package Part Marking SPN6435S36RG SOT-363 435YW SPN6435S36RGB SOT-363 435YW Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN6435S36RG : Tape Reel ; Pb Free SPN6435S36RGB : Tape Reel ; Pb Free ; Halogen Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 40 V Gate Source Voltage - Continuous VGSS ±20 V Gate Source Voltage - Non Repetitive ( tp < 50μs) VGSS ±40 V Continuous Drain Current(TJ=150 ) TA=25 ID 0.3 A Pulsed Drain Current ( ) IDM 1.0 A Continuous Source Current(Diode Conduction) IS 0.3 A Power Dissipation TA=25 PD 0.35 W Operating Junction Temperature TJ -55 ~ 150 Storage Temperature Range TSTG -55 ~ 150 Thermal Resistance-Junction to Ambient RθJA 375 /W ( ) Pulse width limited by safe operating area 2010/12/17 Ver.3 Page 2

ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=150uA 40 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 1.3 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 na VDS=32V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=32V,VGS=0V ua 10 TJ=125 VGS=10V,ID=0.3A 2.8 4.0 Drain-Source On-Resistance RDS(on) VGS= 5V,ID=0.2A 3.2 5.0 Ω VGS= 2.5V,ID=0.02A 7.5 10.0 Forward Transconductance Gfs(1) VDS = 10 V, ID = 0.5 A 0.6 S Diode Forward Voltage VSD(1) VGS = 0 V, IS = 0.12A 0.85 1.5 V Dynamic Total Gate Charge Qg 1.4 2.0 VDD = 30 V, ID = 1 A, Gate-Source Charge Qgs 0.8 VGS = 5 V Gate-Drain Charge Qgd 0.5 Input Capacitance Ciss 43 Output Capacitance Coss VDS = 25 V, f = 1 MHz, VGS = 0 20 Reverse Transfer Capacitance Crss 6 Turn-On Time Turn-Off Time (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. td(on) 5 tr 15 td(off) 7 tf VDD = 30 V, ID = 0.5 A RG = 4.7Ω VGS = 4.5 V 8 nc pf ns 2010/12/17 Ver.3 Page 3

TYPICAL CHARACTERISTICS 2010/12/17 Ver.3 Page 4

TYPICAL CHARACTERISTICS 2010/12/17 Ver.3 Page 5

SOT-363 PACKAGE OUTLINE 2010/12/17 Ver.3 Page 6

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. The SYNC Power logo is a registered trademark of SYNC Power Corporation 2004 SYNC Power Corporation Printed in Taiwan All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 http://www.syncpower.com 2010/12/17 Ver.3 Page 7