2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter Welder SMPS and UPS Induction heating AGENCY AGENCY FILE NUMBER E7639 Module Characteristics ( = 25 C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit R thjc Junction-to-Case Thermal Per IGBT.9 K/W R thjcd Resistance Per Inverse Diode.22 K/W Torque Module-to-Sink Recommended (M6) 3 5 N m Torque Module Electrodes Recommended (M6) 2.5 5 N m Weight 285 g Absolute Maximum Ratings ( = 25 C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT V CES Collector - Emitter Voltage 2 V V GES Gate - Emitter Voltage ±2 V DC Collector Current =25 C 3 A =8 C 2 A puls Pulsed Collector Current =25 C, t p =ms 6 =8 C, t p =ms 42 A P tot Power Dissipation Per IGBT 4 W Junction Temperature Range -4 to +5 C T STG Storage Temperature Range -4 to +25 C V isol Insulation Test Voltage AC, t=min 3 V Diode V RRM Repetitive Reverse Voltage 2 V I F(AV) Average Forward Current =25 C 25 A =8 C 7 A I F(RMS) RMS Forward Current 25 A I FSM Non-Repetitive Surge Forward =45 C, t=ms, Sine 86 Current =45 C, t=8.3ms, Sine 92 A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 7 26 Littelfuse, Inc Revised:7/2/6
2V 2A IGBT Module Electrical and Thermal Specifications ( = 25 C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate - Emitter Threshold Voltage V CE =V GE, =8mA 5. 6.2 7. V V CE(sat) Collector - Emitter =2A, V GE =5V, =25 C.8 V Saturation Voltage =2A, V GE =5V, =25 C 2. V ES Collector Leakage Current V CE =2V, V GE =V, =25 C.4. ma V CE =2V, V GE =V, =25 C 6. ma I GES Gate Leakage Current V CE =V,V GE =±2V -4 4 na Q ge Gate Charge V CC =6V, =2A, V GE =±5V 2 nc C ies Input Capacitance 4.9 C oes Output Capacitance V CE =25V, V GE =V, f =MHz.4 nf C res Reverse Transfer Capacitance.7 t d(on) Turn - on Delay Time =25 C 25 ns =25 C 35 ns t r Rise Time V CC =6V =25 C 6 ns =25 C 6 ns =2A T t d(off) Turn - off Delay Time J =25 C 42 ns =25 C 49 ns R G =5Ω T t f Fall Time J =25 C 6 ns V GE =±5V =25 C 75 ns E on Turn - on Energy Inductive Load =25 C 7 mj =25 C 24.8 mj E off Turn - off Energy =25 C 3.6 mj =25 C 2.6 mj Diode V F Forward Voltage I F =2A, V GE =V, =25 C 2. 2.44 V I F =2A, V GE =V, =25 C.7 2.2 V t rr Reverse Recovery Time I F =2A, V R =8V 26 ns I RRM Max. Reverse Recovery Current di F /dt=-a/μs A Q rr Reverse Recovery Charge =25 C 3.5 μc 7 2 26 Littelfuse, Inc Revised:7/2/6
2V 2A IGBT Module Figure : Typical Output Characteristics Figure 2: Typical Transfer characteristics 6 6 5 5 V CE=2V 4 4 IC (A) 3 2 =25 C =25 C IC (A) 3 2 =25 C =25 C.5.5 2 2.5 3 3.5 V CE(sat) V 2 4 6 8 2 V GE V 4 Figure 3: Switching Energy vs. Collector Current Figure 4: Switching Energy vs. Gate Resistor 24 Eon Eoff (mj) 2 6 2 8 V CC=6V R G=5ohm V GE=±5V =25 C E on Eon Eoff (mj) 8 6 4 V CC=6V =2A V GE=±5V =25 C E on 4 E off 2 E off 2 3 4 A 5 6 7 5 5 2 25 3 R G ohm 35 Figure 5: Switching Times vs. Collector Current 3 Figure 6: Switching Times vs. Gate Resistor 4 t d(off) 3 t (ns) 2 t d(on) t r t (ns) t d(off) t d(on) t f V CC=6V R G=5ohm V GE=±5V =25 C 6 2 8 24 3 36 42 A t f 2 t r V CC=6V =2A V GE=±5V =25 C 5 5 2 25 3 35 R G ohm 72 3 26 Littelfuse, Inc Revised:7/2/6
2V 2A IGBT Module Figure 7: Gate Charge characteristics Figure 8: Typical Capacitances vs. V CE 25 2 V CC=6V =2A =25 C C ies V GE =V f=mhz VGE (V) 5 C (nf) C oes 5 C res.4.8.2.6 Q g µc 2.. 5 5 2 25 V CE V 3 35 Figure 9: Reverse Biased Safe Operating Area Figure : Short Circuit Safe Operating Area 7 6 5 36 3 24 ICpuls (A) 4 3 2 =5 C =25 C V GE =5V ICsc (A) 8 2 6 =5 C =25 C V GE =5V t sc µs 2 4 6 8 2 V CE V 4 2 4 6 8 2 4 V CE V Figure : Rated Current vs. 35 3 =5 C V GE 5V Figure 2: Diode Forward Characteristics 6 5 IC(A) 25 2 5 IF (A) 4 3 =25 C 5 2 =25 C 25 5 75 25 5 75 Case Temperature( C).5..5 2. 2.5 3 3.5 V F V 4 73 26 Littelfuse, Inc Revised:7/2/6
2V 2A IGBT Module Figure 3: Transient Thermal Impedance of IGBT Figure 4: Transient Thermal Impedance of Diode - - ZthJC (K/W) -2 Duty.5.2..5 Single Pulse ZthJC (K/W) -2 Duty.5.2..5 Single Pulse -3-3 -4-4 -3-2 - Rectangular Pulse Duration (seconds) -4-4 -3-2 - Rectangular Pulse Duration (seconds) Dimensions-Package D Circuit Diagram 2.8x.5 3 2 3-M6 4 5 6 7 74 5 26 Littelfuse, Inc Revised:7/2/6
2V 2A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q 285g Bulk Pack 6 Part Numbering System Part Marking System MG22 D - B A MM PRODUCT TYPE M: Power Module ASSEMBLY SITE 3 2 MODULE TYPE G: IGBT VOLTAGE RATING 2: 2V CURRENT RATING 2: 2A WAFER TYPE CIRCUIT TYPE 2x(IGBT+FWD) PACKAGE TYPE 4 5 6 7 LOT NUMBER 75 6 26 Littelfuse, Inc Revised:7/2/6