Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge FEATURES Low V CE(on) trench IGBT technology 5 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 75 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology Material categorization: for definitions of compliance please see www.vishay.com/doc?999 TYPICAL APPLICATIONS UPS (Uninterruptable Power Supply) Switching mode power supplies Electronic welders DESCRIPTION Vishay s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (T C = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 Gate to emitter voltage V GES ± V T C = 5 C 6 Collector current I C T C = 8 C Pulsed collector current I () CM t p = ms A Diode continuous forward current I F T C = 8 C Diode maximum forward current I () FM t p = ms Maximum power dissipation P D T J = 75 C 47 W Short circuit withstand time t SC T C = 5 C 5 μs RMS isolation voltage V ISOL f = 5 Hz, t = min 4 V Note () Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (T C = 5 C unless otherwise noted) Collector to emitter breakdown voltage V (BR)CES T J = 5 C 6 - - V GE = 5 V, I C = A, T J = 5 C -.65. Collector to emitter voltage V CE(on) V GE = 5 V, I C = A, T J = 75 C -. - V Gate to emitter threshold voltage V GE(th) V CE = V GE, I C =. ma, T J = 5 C 4. 4.4 6.5 Collector cut-off current I CES V CE = V CES, V GE = V, T J = 5 C - - 5. ma Gate to emitter leakage current I GES V GE = V GES, V CE = V, T J = 5 C - - 4 na Revision: -Jun-5 Document Number: 93799 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTTP6N SWITCHING CHARACTERISTICS Turn-on delay time t d(on) - 6 - Rise time t r - 49 - Turn-off delay time t d(off) V CC = 3 V, I C = A, R g =., - - ns Fall time t f V GE = ± 5 V, T J = 5 C - 85 - Turn-on switching loss E on -.46 - Turn-off switching loss E off -.95 - mj Turn-on delay time t d(on) - - Rise time t r - 6 - Turn-off delay time t d(off) V CC = 3 V, I C = A, R g =., - 6 - ns Fall time t f V GE = ± 5 V, T J = 5 C - 9 - Turn-on switching loss E on -.78 - Turn-off switching loss E off -.73 - mj Input capacitance C ies - 7.7 - Output capacitance C oes V GE = V, V CE = 3 V, f =. MHz -.53 - nf Reverse transfer capacitance C res -.3 - SC data I SC t p 5 μs, V GE = 5 V, T J = 5 C, V CC = 36 V, V CEM V - 9 - A Stray inductance L CE - - 3 nh Module lead resistance, terminal to chip R CC +EE -.75 - m charge DIODE ELECTRICAL SPECIFICATIONS (T C = 5 C unless otherwise noted) Forward voltage V F I F = A T J = 5 C -.4.8 T J = 5 C -.4 - V Reverse recovery Q rr T J = 5 C - 5.5 - T J = 5 C - 7.3 - μc IF = A, VR = 6 V, T J = 5 C - 68 - Peak reverse recovery current I rr R G = 5.6 V GE = -5 V T J = 5 C - 88 - A T J = 5 C -.89 - Reverse recovery energy E rec T J = 5 C -.7 - mj THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction temperature T J - - 75 C Storage temperature range T Stg -4-5 IGBT - -.36 Junction to case R thjc Diode - -.57 K/W Case to sink (Conductive grease applied) R thcs -.5 - Power terminal screw: M5.5 to 5. Mounting torque Nm Mounting screw: M6 3. to 5. Weight - 5 - g Revision: -Jun-5 Document Number: 93799 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTTP6N www.vishay.com 5 75 5 5 75 5 5 V GE = 5 V 5 C 75 C 4.5 4 3.5 3.5.5.5 V CC = 3 V R G =. Ω V GE = ± 5 V T J = 5 C E ON E OFF.5.5.5 3 3.5 5 5 V CE (V) Fig. - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. I C 7 75 5 V CE = 5 V 6 5 V CC = 3 V I C = A V GE = ± 5 V T J = 5 C 5 75 5 5 75 C 5 C 4 3 E on E off 4 5 6 7 8 9 V GE (V) Fig. - IGBT Transfer Characteristics 3 4 5 R g (Ω) Fig. 4 - IGBT Switching Loss vs. R G 5 Module 5 5 R G =. Ω V GE = ± 5 V T J = 5 C 3 4 5 6 7 V CE (V) Fig. 5 - RBSOA Revision: -Jun-5 3 Document Number: 93799 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTTP6N Z thjc (K/W). IGBT.... t (s) Fig. 6 - IGBT Transient Thermal Impedance.5 I F (A) 75 5 5 75.5 V CC = 3 V R G =. Ω V GE = - 5 V T J = 5 C E REC 5 5 5 C 5 C.5.5.5 V F (V) Fig. 7 - Diode Forward Characteristics 5 5 I F (A) Fig. 8 - Diode Switching Loss vs. I F.8.6.4..8.6.4. V CC = 3 V I F = A V GE = - 5 V T J = 5 C E REC 3 4 5 R G (Ω) Fig. 9 - Diode Switching Loss vs. R G Revision: -Jun-5 4 Document Number: 93799 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTTP6N Diode Z thjc (K/W)..... t (s) Fig. - Forward Characteristics of Diode CIRCUIT CONFIGURATION 6 7 3 5 4 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9554 Revision: -Jun-5 5 Document Number: 93799 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 6-Aug- Document Number: 9554 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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