T6H High temperature 6 A sensitive TRIACs Features Medium current TRIAC A Logic level sensitive TRIAC C max. T j turn-off commutation G Clip bounding A RoHS (/9/EC) compliant package Applications A The T6H is designed for the control of AC actuators in appliances and industrial systems. The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through this sensitive gate TRIAC. Description A A TO-AB T6H-6T G Specifically designed to operate at C, the new 6 A T6H TRIAC provides an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions. Based on ST logic level technology, the T6H offers an I GT lower than ma and specified minimal commutation and high noise immunity levels valid up to the T j max. Table. Device summary Symbol Value Unit I T(RMS) 6 A V DRM /V RRM 6 V I GT MAX ma May 9 Doc ID 7 Rev /9 www.st.com 9
Characteristics T6H Characteristics Table. Absolute maximum ratings Symbol Parameter Value Unit I T(RMS) On-state rms current (full sine wave) T c = 8 C 6 A I TSM Non repetitive surge peak on-state current (full cycle, T j initial = C) F = 6 Hz t = 6.7 ms 6 F = Hz t = ms 6 I ² t I ² t Value for fusing t p = ms A ² s di/dt V DSM /V RSM Critical rate of rise of on-state current I G = x I GT, t r ns Non repetitive surge peak off-state voltage F = Hz T j = C A/µs t p = ms T j = C V DRM /V RRM + I GM Peak gate current t p = µs T j = C A P G(AV) Average gate power dissipation T j = C W T stg T j Table. Storage junction temperature range Operating junction temperature range Electrical characteristics (T j = C, unless otherwise specified) - to + - to + Symbol Test conditions Quadrant Min. Max. Unit I GT I - II - III ma V D = V R L = Ω V GT I - II - III. V V GD V D = V DRM, R L =. kω I - II - III. V () I H I T = ma ma I - III I L I G =. I GT ma II dv/dt () V D = 67% V DRM, gate open, T j = C 7 V/µs (di/dt)c () Logic level,. V/µs, T j = C 8.7 A/ms Logic level, V/µs, T j = C.. For both polarities of A referenced to A. A V C /9 Doc ID 7 Rev
T6H Characteristics Table. Static characteristics Symbol Test conditions Value Unit V () T I TM = 8. A, t p = 8 µs T j = C MAX.. V V () t Threshold voltage T j = C MAX..8 V R () d Dynamic resistance T j = C MAX. 6 mω I DRM I RRM V DRM = V RRM T j = C MAX..7 T j = C MAX. µa V D /V R = V (at peak mains voltage) T j = C MAX.. V D /V R = V (at peak mains voltage) T j = C MAX..8 ma. for both polarities of A referenced to A. Table. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC).8 R th(j-a) Junction to ambient 6 C/W Figure. Maximum power dissipation versus on-state rms current (full cycle) Figure. On-state rms current versus case temperature (full cycle) 7 P(W) 7 I T(RMS) (A) 6 6 I T(RMS) (A) 6 T C ( C) 7 Figure. On-state rms current versus ambient temperature (free air convection, full cycle) Figure. Relative variation of thermal impedance, versus pulse duration. I T(RMS) (A).E+ K=[Zth/Rth]. Zth(j-c)..E-. Zth(j-a)..E-. T a ( C). 7 tp(s).e-.e-.e-.e-.e+.e+.e+.e+ Doc ID 7 Rev /9
Characteristics T6H Figure. Relative variation of gate trigger current and voltage versus junction temperature (typical values) Figure 6. Relative variation of holding and latching current versus junction temperature (typical values). I GT,V GT [T j ]/I GT,V GT [T j = C] IGT Q. I H,I L [T j ]/I H,I L [T j = C]. IGTQ-Q.... VGT Q- Q -Q IL. T j ( C). - - 7. IH T j ( C). - - 7 Figure 7. Surge peak on-state current versus number of cycles Figure 8. Non-repetitive surge peak on-state current and corresponding value of I t 6 6 I TSM (A) Repetitive T C =8 C Non repetitive T j initial= C Number of cycles t=ms One cycle I TSM (A), I²t (A²s) di/dt limitation: A/µs T j initial= C I TSM I²t Sinusoidal pulse width t p < ms t P (ms).... Figure 9. On-state characteristics (maximum values) Figure. Relative variation of critical rate of decrease of main current versus junction temperature I TM (A) T j max : V to =.8 V R d = 6 mω 9 (di/dt) C [T j ]/(di/dt) c [T j = C] 8 7 T j = C 6 T j = C VTM (V) T j ( C) 7 /9 Doc ID 7 Rev
T6H Characteristics Figure. Relative variation of critical rate of decrease of main current versus reapplied dv/dt (typical values) Figure. Relative variation of static dv/dt immunity versus junction temperature (di/dt) c [(dv/dt) c ] / Specified (di/dt) c (dv/dt) C (V/µs).... 9 8 7 6 dv/dt [T j ]/dv/dt[t j = C] T j( C) V D =V R = V 7 Figure. Variation of leakage current versus junction temperature for different values of blocking voltage Figure. Acceptable case to ambient thermal resistance versus repetitive peak off-state voltage.e+.e-.e-.e-.e- I DRM/I RRM [Tj;V DRM/V RRM]/I DRM/I RRM [Tj= C; 6V] V DRM =V RRM = V V DRM =V RRM = V V DRM =V RRM =6 V T j ( C) 7 7 6 6 R th(c-a) ( C/W) V AC PEAK(V) R th(j-c) =.8 C/W T J = C 6 Doc ID 7 Rev /9
Ordering information scheme T6H Ordering information scheme Figure. Ordering information scheme T 6 H - 6 T Triac series Current 6 = 6 A Sensitivity = ma High temperature Voltage 6 = 6 V Package T = TO-AB 6/9 Doc ID 7 Rev
T6H Package information Package information Epoxy meets UL9, V Recommended torque. to.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 6. TO-AB dimensions Ref. Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A..9.98.6 a.7.7 B C a.... Ø I b B...9.9 L F b.6.88.. A b...8. I l l a a c C..6.7.8 c.9.7.9.7 c..7.9.7 e..7.9.6 e b M c F 6. 6.6..9 ØI.7.8.7. I.8 6. 6.8.6.66.66 L.6.9..6 l..7..66 l..7..66 M.6. Doc ID 7 Rev 7/9
Ordering information T6H Ordering information Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode T6H-6T T6H 6T TO-AB. g Tube Revision history Table 8. Document revision history Date Revision Changes -May-9 First issue. 8/9 Doc ID 7 Rev
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