Darlington Transistors

Similar documents
Darlington Transistors

TIP120, 121, 122, 125, 126, 127

Darlington Transistor TO-3

BDW93C, BDW94C Series

TIP120, 121, 122, 125, 126, 127 Darlington Transistors

2N6054/2N6056 Darlington Transistors

2N6668 Darlington Power Transistor

MJ15003, MJ A Complementary Power Transistors

MJ11032, Darlington Power Transistors

MJ15022 / MJ15024 Power Transistors

BU426A Power Transistor

MJE13005 Power Transistor

2N4401 & 2N4403 General Purpose Switching Transistors

BUV48A Power Transistor

2N2222A High Speed Switching Transistor

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors

TIP120, TIP121, TIP122,

Obsolete Product(s) - Obsolete Product(s)

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors

UNISONIC TECHNOLOGIES CO., LTD

Adc. W W/ C T J, T stg 65 to C

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1.

MJD122 MJD127 Complementary power Darlington transistors Features Applications Description

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W

DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS

Obsolete Product(s) - Obsolete Product(s)

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

KSH122 / KSH122I NPN Silicon Darlington Transistor

2SD2638 2SD2638. Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications. Maximum Ratings (Tc = 25 C)

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

Obsolete Product(s) - Obsolete Product(s)

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors

SMD Power Inductors. Features: Applications: Figure 1. Figure 2. Page <1> 20/06/11 V1.1

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793

Obsolete Product(s) - Obsolete Product(s)

MBR10xCT Series TO-220AB

MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MUN5311DW1T1G Series.

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858

ST26025A. PNP power Darlington transistor. Features. Applications. Description

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

UNISONIC TECHNOLOGIES CO., LTD

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

Dual Bias Resistor Transistors

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors

Surface Mount Resistor Kit 0603 Case Size

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

NSTB1002DXV5T1G, NSTB1002DXV5T5G

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

P-Channel Enhancement Mode Vertical D-MOS Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications

TIP120, TIP121, TIP122,

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Large Snap-In Electrolytic Capacitors HPR Series

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

Transcription:

Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector-emitter saturation voltage - V CE (sat) = 2 V (maximum) at I C = 3 A Monolithic construction with built-in base-emitter shunt resistors Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.2 2.97 L 0.33 5 M 2.48 2.98 O 3.7 3.9 Dimensions : Millimetres NPN PNP TIP120 TIP 125 TIP121 TIP 126 TIP122 TIP 127 5 A Darlington Complementary Silicon Power Transistors 60 to 400 V 65 W TO-220 Parameter Symbol TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Unit Collector-Emitter Voltage V CEO 60 80 100 Collector-Base Voltage V CBO Emitter-Base Voltage V EBO 5 Collector Current - Continuous - Peak I C 5 I CM 8 Base Current I B 120 ma Total Power Dissipation at T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 65 2 V A W W / C T J, T STG -65 to +150 C Page <1> 16/06/12 V1.1

Thermal Characteristics Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rθjc 1.92 C / W Power Derating P D, Power Dissipation (W) T C, Temperature ( C) Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit Off Characteristics Collector-Emitter Breakdown Voltage (1) (I C = 30 ma, I B = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 (V CE = 30 V, I B = 0) TIP120, TIP125 (V CE = 40 V, I B = 0) TIP121, TIP126 (V CE = 50 V, I B = 0) TIP122, TIP127 (V CE = 60 V, I B = 0) TIP120, TIP125 (V CE = 80 V, I B = 0) TIP121, TIP126 (V CE = 100 V, I B = 0) TIP122, TIP127 (V EB = 5 V, I C = 0) V CEO (SUS) 60 80 100 I CEO - I CBO - - V I EBO - 2 ma On Characteristics (1) DC Current Gain (I C = A, V CE = 3 V) (I C = 3 A, VCE = 3 V) h FE 1,000 1,000 - - Collector-Emitter Saturation Voltage (I C = 3 A, I B = 12 ma) (I C = 5 A, I B = 20 ma) Base-Emitter on Voltage (I C = 3 A, V CE = 3 V) V CE (sat) - 2 4 V V BE (on) - 2.5 Page <2> 16/06/12 V1.1

Dynamic Characteristics Small-Signal Current Gain (I C = 3 A, V CE = 4 V, f = 1 MHz) h fe 4 - - Output Capacitance (V CB = 10 V, I E = 0, f = 0.1 MHz) TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 C ob - 300 250 pf (1) Pulse Test : Pulse width = 300 µs, duty cycle 2% NPN TIP120 TIP121 TIP122 Internal Schematic Diagram PNP TIP125 TIP126 TIP127 Figure - 2 Switching Time Figure - 3 Switching Time T, Time (µs) T, Time (µs) Figure - 4 Small Signal Current Gain Figure - 5 Capacitances h FE, Small Signal Current Gain C, Capacitances (pf) f, Frequency (KHz) V R, Reverse Voltage (V) Page <3> 16/06/12 V1.1

Figure - 6 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I C - V CE limits of the transistor that must not be subjected to greater dissipation than the curves indicate The data of Figure - 6 is based on T J (PK) = 150 C; T C is variable depending on power level Second breakdown pulse limits are valid for duty cycles to 10% provided T J (PK) 150 C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure - 7 DC Current Gain h FE, DC Current Gain h FE, DC Current Gain Figure - 8 Collector Saturation Region I B, Base Current (ma) I B, Base Current (ma) Page <4> 16/06/12 V1.1

Figure - 9 ON Voltage V, Voltage (V) V, Voltage (V) I C, Collector Current (A) Specification Table I C A 5 V CEO (Maximum) V 60 h FE Minimum at I C = 3A P tot at 25 C W Package NPN TIP120 Part Number 80 1,000 65 TO-220 TIP121 TIP126 PNP TIP125 100 TIP122 TIP127 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc 2012. Page <5> 16/06/12 V1.1