RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.) @ V GS =-4.5V Reliable and Rugged ESD Protected Lead Free and Green Devices Available (RoHS Compliant) Applications Load Switch Pin Description D D D D pin SOP-8 D S G G S D G G S S Absolute Maximum Ratings Complementary MOSFET Symbol Parameter N-Channel P-Channel Unit Common Ratings (T A =5 C Unless Otherwise Noted) V DSS Drain-Source Voltage - V GSS Gate-Source Voltage ± ± V T J Maximum Junction Temperature 5 5 C T STG Storage Temperature Range -55 to 5-55 to 5 C I S Diode Continuous Forward Current T A =5 C.7 -.5 A Mounted on Large Heat Sink I DP μs Pulse Drain Current Tested T A =5 C -8 A I D Continuous Drain Current(V GS =±V) T A =5 C 8-7 T A =7 C 6.5-5.6 A P D Maximum Power Dissipation T A =5 C T A =7 C.. W R JC Thermal Resistance-Junction to Case TBD TBD C/W R JA Thermal Resistance-Junction to Ambient 6.5 6.5 C/W Drain-Source Avalanche Ratings E AS 4 Avalanche Energy, Single Pulsed TBD TBD mj Rev. A DEC., www.ruichips.com
RUC8H Electrical Characteristics (T A =5 C Unless Otherwise Noted) RUC8H Symbol Parameter Test Condition Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =5µA N VGS =V, I DS =-5µA P - I DSS V GS(th) I GSS R 5 DS(ON) Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current V DS =V, V GS =V N T J =5 C V DS =-V, V GS =V - P T J =5 C - V DS =V GS, I DS =5µA V GS =±V, V DS =V N N. ±.8.4 V DS =V GS, I DS =-5µA V GS =±V, V DS =V P P -. ± -.8 -.4 V GS =V, I DS =8A N 5 V GS =-V, I DS =-6A P 8 5 Drain-Source On-state Resistance V GS =4.5V, I DS =7A N 6 5 V GS =-4.5V, I DS =-5A P 5 5 Unit V µa V µa mω Diode Characteristics V SD 5 trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge I SD =A, V GS =V I SD =-A, V GS =V N-Channel I SD =8A, dl SD /dt=a/µs P-Channel I SD =-7A, dl SD /dt=a/µs N. P -. N P 7 N P 9 V ns nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel V GS =V,V DS =5V, Frequency=.MHz P-Channel V GS =V,V DS =-5V, Frequency=.MHz N.8 P N 4 P 78 N 75 P 55 N 5 P 95 Ω pf Rev. A DEC., www.ruichips.com
RUC8H Electrical Characteristics (T A =5 C Unless Otherwise Noted) Symbol Parameter Test Condition RUC8H Min. Typ. Max. Unit Dynamic Characteristics 6 t d(on) t r t d(off) t f Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time N-Channel V DD =5V, I DS =8A, V GEN =V, R G =6Ω P-Channel V DD =-5V, I DS =-7A, V GEN = -V, R G =6Ω N 5 P 9 N P 6 N 5 P N 4 P 7 ns Gate Charge Characteristics 6 Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel V DS =4V, V GS =V, I DS =8A P-Channel V DS =-4V, V GS = -V, I DS =-7A N 8 P 5 N. P.5 N P.5 nc Notes: Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax. Starting T J = 5 C. 5Pulse test;pulse width µs, duty cycle %. 6Guaranteed by design, not subject to production testing. Rev. A DEC., www.ruichips.com
RUC8H Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RUC8H RUC8H SOP-8 Tape&Reel 5 mm Rev. A DEC., 4 www.ruichips.com
RUC8H Typical Characteristics(N-Channel) Power Dissipation 9 Drain Current 8 P D -Power (W) 5 5 75 5 5 75 I D - Drain Current (A) 7 6 5 4 VGS=V 5 5 75 5 5 75 T j - Junction Temperature ( C) T j - Junction Temperature ( C) I D - Drain Current (A). R DS(ON) limited Safe Operation Area DC µs µs ms ms T A =5 C... R DS(ON) - On - Resistance (mω) 5 4 Drain Current Ids=8A 4 5 6 7 8 9 V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) ZthJA - Thermal Response ( C/W) Duty=.5,.,.,.5,.,., Single Pulse Thermal Transient Impedance Single Pulse R θja =6.5 C/ W..... Square Wave Pulse Duration (sec) Rev. A DEC., 5 www.ruichips.com
RUC8H Typical Characteristics(N-Channel) Output Characteristics I D - Drain Current (A) 8 6 4 8V V 5V V V 4 5 R DS(ON) - On Resistance (mω) 5 4 Drain-Source On Resistance 4.5V V 4 6 8 V DS - Drain-Source Voltage (V) I D - Drain Current (A) Normalized On Resistance.5..5. V GS =V I DS =8A Drain-Source On Resistance.5 T J =5 C Rds(on)=mΩ....4.6.8..4-5 -5 5 5 75 5 5 75 T J - Junction Temperature ( C) I S - Source Current (A) Source-Drain Diode Forward T J =5 C T J =5 C V SD - Source-Drain Voltage (V) C - Capacitance (pf) 5 4 Capacitance Frequency=.MHz Ciss Coss Crss V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) 9 8 7 6 5 4 VDS=4V IDS=8A Gate Charge 4 6 8 Q G - Gate Charge (nc) Rev. A DEC., 6 www.ruichips.com
RUC8H Typical Characteristics(P-Channel) Power Dissipation 8 Drain Current 7 P D -Power (W) -I D - Drain Current (A) 5 5 75 5 5 75. T J - Junction Temperature ( C) R DS(ON) limited Safe Operation Area DC µs µs ms ms T A =5 C... -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) R DS(ON) - On - Resistance (mω) 6 5 4 8 6 4 VGS=-V 5 5 75 5 5 75 T J - Junction Temperature ( C) Drain Current 4 5 6 7 8 9 -V GS - Gate-Source Voltage (V) Ids=-7A ZthJA - Thermal Response ( C/W) Duty=.5,.,.,.5,.,., Single Pulse Single Pulse Thermal Transient Impedance R θja =6.5 C/ W..... Square Wave Pulse Duration (sec) Rev. A JAN., 7 www.ruichips.com
RUC8H Typical Characteristics(P-Channel) Output Characteristics -I D - Drain Current (A) -V -8V 8-5V 6 4 -V -V 4 5 -V DS - Drain-Source Voltage (V) R DS(ON) - On Resistance (mω) 8 6 4 Drain-Source On Resistance -4.5V -V 4 6 8 -I D - Drain Current (A) Normalized On Resistance.5..5. V GS =-V I DS =-7A Drain-Source On Resistance.5 T J =5 C Rds(on)=8mΩ....4.6.8..4-5 -5 5 5 75 5 5 75 T J - Junction Temperature ( C) -I S - Source Current (A) Source-Drain Diode Forward T J =5 C T J =5 C -V SD - Source-Drain Voltage (V) C - Capacitance (pf) 5 9 6 Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) 9 8 7 6 5 4 VDS=-4V IDS=-7A Gate Charge 5 5 Q G - Gate Charge (nc) Rev. A JAN., 8 www.ruichips.com
EEAebAARUC8H Package Information SOP-8 DMIN NOM MAX MIN NOM MAX Cθ LSYMBOL MM INCH A..55.75.5.6.69 A.5.5.5..6. A.5.45.55.5.57.6 b..4.5..7. c.7..5.7.8. D 4.7 4.9 5..85.9. E.8.9 4..5.54.57 E 5.8 6. 6..8.6.44 e.7 BSC.5 BSC L.4.85.7.6..5 θ 8 8 Rev. A DEC., 9 www.ruichips.com
RUC8H Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 5, the 5floor An Tong Industrial Building, NO.7 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8-54 FAX: (86-755) 8-478 E-mail: Sales-SZ@ruichips.com Rev. A DEC., www.ruichips.com