Datasheet: CSD66 Rev. R CSD66 Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 6 V I F(AVG) = 6 A Q c = 17 nc Features 6-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Package TO-263-2 PIN 1 PIN 2 TO-22-2 CASE Applications Switch Mode Power Supplies Power Factor Correction - Typical PFC P out : 6W-12W Motor Drives - Typical Power : 2HP-3HP Part Number Package Marking CSD66A TO-22-2 CSD66 CSD66G TO-263-2 CSD66 Maximum Ratings Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 6 V SM Surge Peak Reverse Voltage 6 V V DC DC Blocking Voltage 6 V I F(AVG) Average Forward Current 6 1 A =15 C, DC =125 C, DC I F(PEAK) Peak Forward Current 15 A =125 C, T REP <1 ms, Duty=.5 I FRM Repetitive Peak Forward Surge Current 32 22 A =25 C, t P = 1 ms, Half Sine Wave =125 C, t P =1 ms, Half Sine Wave I FSM Non-Repetitive Peak Forward Surge Current 64 A =25 C, t p = 1.5 ms, Half Sine Wave I FSM Non-Repetitive Peak Forward Surge Current 2 A =25 C, t P = 1 µs, Pulse P tot Power Dissipation 83.3 27.8 W =25 C =125 C T J, T stg Operating Junction and Storage Temperature -55 to +175 C TO-22 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw Subject to change without notice. www.cree.com 1
I F Forward Current (A) I R Reverse Current (μa) Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current 1.6 1.9 5 1 1.8 2.4 2 1 Q C Total Capacitive Charge 17 nc C Total Capacitance 34 4 3 V μa pf I F = 6 A T J =25 C I F = 6 A T J =175 C = 6 V T J =25 C = 6 V T J =175 C = 6 V, I F = 6A di/dt = 5 A/μs T J = 25 C = V, T J = 25 C, f = 1 MHz = 2 V, T J = 25 C, f = 1 MHz = 4 V, T J = 25 C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit R θjc Thermal Resistance from Junction to Case 1.8 C/W Typical Performance 12 2 11 1 9 8 18 16 14 7 6 12 1 5 4 3 2 1 8 6 4 2.5 1. 1.5 2. 2.5 3.5 4. V F Forward Voltage (V) 2 4 6 8 Reverse Voltage (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 CSD66 Rev. R
I F(PEAK) Peak Forward Current (A) C Capacitance (pf) Typical Performance 7 25 6 2 5 4 3 2 1 1% 1% Duty Duty* 3% 3% Duty Duty* 5% 5% Duty Duty* 7% 7% Duty Duty* DC DC 15 1 5 25 5 75 1 125 15 175 2 Case Temperature ( C) * Frequency > 1KHz 1 1 1 1 Reverse Voltage (V) Figure 3. Current Derating Figure 4. Capacitance vs. Reverse Voltage 1.E+1 1.E+ Zth ( C/W) 1.E-1 1.E-2 1.E-3 1.E-7 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Time (s) Figure 5. Transient Thermal Impedance 3 CSD66 Rev. R
Power Dissipation (W) Typical Performance 1 8 6 4 2 25 5 75 1 125 15 175 Case Temperature ( C) Figure 6. Power Derating 4 CSD66 Rev. R
Package Dimensions Package TO-22-2 POS Inches Millimeters Min Max Min Max A.381.41 9.677 1.414 B.235.255 5.969 6.477 Z C D A 1 2 J B E H G F S T P Q U Y X C.1.12 2.54 3.48 D.223.337 5.664 8.56 E.59.615 14.986 15.621 F.143.153 3.632 3.886 G 1.15 1.147 28.67 29.134 H.5.55 12.7 13.97 J R.197 R.197 L.25.36.635.914 M.45.55 1.143 1.397 N.195.25 4.953 5.27 L M N V W P.165.185 4.191 4.699 Q.48.54 1.219 1.372 S 3 6 3 6 T 3 6 3 6 U 3 6 3 6 PIN 1 PIN 2 CASE V.94.11 2.388 2.794 W.14.25.356.635 X 3 5.5 3 5.5 Y.385.41 9.779 1.414 z.13.15 3.32 3.81 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Package Dimensions Package TO-263-2 POS Inches Millimeters Min Max Min Max A.396.46 1.58 1.312 B.297.33 7.544 7.696 C.57.63 1.448 1.6 D.237.243 6.15 6.167 E*..7. 1.778 F.48.62 1.219 1.575 G.1 2.54 H.335.345 8.59 8.763 J.28.34.711.864 K 2 4 2 4 * L.17.18 4.318 4.572 M.48.52 1.219 1.321 N.595.615 15.113 15.621 P..1..254 Q R.18 R.22 R.457 R.559 R.9.11 2.286 2.794 S.13.17.33.432 PIN 1 PIN 2 CASE T 6.5 8.5 6.5 8.5 U.13.17 2.616 2.718.28 R.32 R.711 R.813 W 5. 5. Note: * Tab E may not be present 5 CSD66 Rev. R
Recommended Solder Pad Layout TO-263-2 TO-22-2 Part Number Package Marking CSD66A TO-22-2 CSD66 CSD66G TO-263-2 CSD66 Diode Model Vf T = V T + If*R T V T=.975 + (T j * -1.*1-3 ) R T=.9 + (T j *.51*1-3 ) Note: T j = Diode Junction Temperature In Degrees Celcius V T R T The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 22/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 26. This part number was released previously with Sn/Pb solder plating as a standard industry finish. For more information please contact power_sales@cree.com This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright 26-29 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 6 CSD66 Rev. R