MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

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Transcription:

MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase Voltage V EBO 5.0 Collector Current Continuous I C 500 madc Total Device Dissipation @ T A = 5 C Derate above 5 C Total Device Dissipation @ T C = 5 C Derate above 5 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase P D 65 5.0 P D.5 T J, T stg 55 to +50 mw mw/ C W mw/ C Characteristic Symbol Max Unit C R JA 00 C/W R JC 8. C/W BASE TO9 CASE 9 STYLES, 4 COLLECTOR EMITTER STYLE MPSA9, MARKING DIAGRAM MPS A9x YWW MPSA9 = Specific Device Code x = or Y = Year W = Work Week ORDERING INFORMATION Device Package Shipping MPSA9 TO9 5000 Units/Box MPSA9RLRA TO9 000/Tape & Reel MPSA9RLRE TO9 000/Tape & Reel MPSA9RLRM TO9 000/Ammo Pack MPSA9RLRP TO9 000/Ammo Pack TO9 5000 Units/Box RLRA TO9 000/Tape & Reel RLRM TO9 000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 00 August, 00 Rev. Publication Order Number: MPSA9/D

MPSA9, ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note ) (I C =.0 madc, I B = 0) MPSA9 V (BR)CEO 00 00 CollectorBase Breakdown Voltage (I C = Adc, I E = 0) MPSA9 V (BR)CBO 00 00 EmitterBase Breakdown Voltage (I E = Adc, I C = 0) V (BR)EBO 5.0 Collector Cutoff Current (V CB = 00, I E = 0) MPSA9 (V CB = 60, I E = 0) I CBO 0.5 0.5 Adc Emitter Cutoff Current (V EB =.0, I C = 0) I EBO 0. Adc ON CHARACTERISTICS (Note ) DC Current Gain (I C =.0 madc, V CE = 0 ) All Types (I C = 0 madc, V CE = 0 ) All Types h FE 5 40 (I C = 0 madc, V CE = 0 ) MPSA9 5 5 CollectorEmitter Saturation Voltage (I C = 0 madc, I B =.0 madc) MPSA9 V CE(sat) 0.5 0.4 BaseEmitter Saturation Voltage (I C = 0 madc, I B =.0 madc) V BE(sat) 0.9 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 0 madc, V CE = 0, f = MHz) f T 50 MHz CollectorBase Capacitance (V CB = 0, I E = 0, f =.0 MHz) MPSA9 C cb 6.0 8.0 pf. Pulse Test: Pulse Width 00 s, Duty Cycle %.

MPSA9, 00 50 T J = +5 C V CE = 0 h FE, DC CURRENT GAIN 00 50 50 5 C 55 C 0 0..0 0 Figure. DC Current Gain C, CAPACITANCE (pf) 0.0 C cb @ MHz C ib @ MHz f, T CURRENTGAIN BANDWIDTH (MHz) 50 0 0 90 70 50 0 T J = 5 C V CE = 0 F = 0 MHz 0. 0..0 0 0 V R, REVERSE VOLTAGE (VOLTS) 0 5 7 9 5 7 9 Figure. Capacitance Figure. CurrentGain Bandwidth.4 V, VOLTAGE (VOLTS)..0 0.8 0.6 0.4 0. V CE(sat) @ 5 C, I C /I B = 0 V CE(sat) @ 5 C, I C /I B = 0 V CE(sat) @ 55 C, I C /I B = 0 V BE(sat) @ 5 C, I C /I B = 0 V BE(sat) @ 5 C, I C /I B = 0 V BE(sat) @ 55 C, I C /I B = 0 V BE(on) @ 5 C, V CE = 0 V V BE(on) @ 5 C, V CE = 0 V V BE(on) @ 55 C, V CE = 0 V 0.0 0..0 0 Figure 4. ON Voltages

R A N B MPSA9, PACKAGE DIMENSIONS TO9 TO6AA CASE 9 ISSUE AL NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.75 0.05 4.45 5.0 B 0.70 0.0 4. 5. C 0.5 0.65.8 4.9 X X D D 0.06 0.0 0.407 0.5 G 0.045 0.055.5.9 G H 0.095 0.05.4.66 H J J 0.05 0.00 0.9 0.50 K 0.500.70 L 0.50 6.5 V C N 0.080 0.05.04.66 N P 0..54 SECTION XX R 0.5.9 V 0.5.4 STYLE : PIN. EMITTER. BASE. COLLECTOR STYLE 4: PIN. EMITTER. COLLECTOR. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 807 USA Phone: 067575 or 80044860 Toll Free USA/Canada Fax: 067576 or 80044867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 80089855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 5005 Phone: 8577850 ON Semiconductor Website: For additional information, please contact your local Sales Representative. 4 MPSA9/D

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