Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications G P - 9257 IRLML2402 HEXFET Power MOSFET V SS = 20V R S(on) = 0 25Ω customized eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industrys smaest footprint This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium The ow profie ( mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards Micro3 bsoute Maximum Ratings Parameter Max Units I @ T = 25 C Continuous rain Current, V GS @ 4 5V 2 I @ T = 70 C Continuous rain Current, V GS @ 4 5V 0 95 I M Pused rain Current 7 4 P @T = 25 C Power issipation 540 mw Linear erating Factor 4 3 mw/ C V GS Gate-to-Source Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5 0 V/ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ Max Units R θj Maximum Junction-to-mbient 230 C/W 0/5/03
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min Typ Max Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp Coefficient 0 024 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0 25 V GS = 4 5V, I = 0 93 ƒ Ω 0 35 V GS = 2 7V, I = 0 47 ƒ V GS(th) Gate Threshod Votage 0 70 V V S = V GS, I = 250µ g fs Forward Transconductance 3 S V S = V, I = 0 47 I SS rain-to-source Leakage Current 0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V n Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge 2 6 3 9 I = 0 93 Q gs Gate-to-Source Charge 0 4 0 62 nc V S = 6V Q gd Gate-to-rain ("Mier") Charge 7 V GS = 4 5V, See Fig 6 and 9 ƒ t d(on) Turn-On eay Time 2 5 V = V t r Rise Time 9 5 I = 0 93 ns t d(off) Turn-Off eay Time 9 7 R G = 6 2Ω t f Fa Time 4 8 R = Ω, See Fig ƒ C iss Input Capacitance V GS = 0V C oss Output Capacitance 5 pf V S = 5V C rss Reverse Transfer Capacitance 25 ƒ = 0MHz, See Fig 5 Source-rain Ratings and Characteristics Parameter Min Typ Max Units Conditions I S Continuous Source Current MOSFET symbo 0 54 (Body iode) showing the I SM Pused Source Current integra reverse 7 4 (Body iode) p-n junction diode V S iode Forward Votage 2 V T J = 25 C, I S = 0 93, V GS = 0V ƒ t rr Reverse Recovery Time 25 38 ns T J = 25 C, I F = 0 93 Q rr Reverse RecoveryCharge 6 24 nc di/dt = 0/µs ƒ G S Notes: Repetitive rating; puse width imited by max junction temperature ( See fig ) I S 0 93, di/dt 90/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2 Surface mounted on FR-4 board, t 5sec
I, rain-to-source Current () 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH 0.0 T J = 25 C V S, rain-to-source Votage (V) I, rain-to-source Current () 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH 0.0 T J = 50 C V S, rain-to-source Votage (V) Fig Typica Output Characteristics Fig 2 Typica Output Characteristics I, rain-to-source Current () T J = 25 C T = 50 C J V S = V 20µs PULSE WITH 0.0.5 2.0 2.5 3.0 3.5 4.0 V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0.5.0 0.5 I = 0.93 V GS = 4.5V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3 Typica Transfer Characteristics Fig 4 Normaized On-Resistance Vs Temperature
C, Capacitance (pf) 200 V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd 60 C oss = C ds + Cgd C iss 20 Coss 80 C rss 40 0 0 V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) 8 6 4 2 I = 0.93 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE 9 0.0.0 2.0 3.0 4.0 Q G, Tota Gate Charge (nc) Fig 5 Typica Capacitance Vs rain-to-source Votage Fig 6 Typica Gate Charge Vs Gate-to-Source Votage I S, Reverse rain Current () T J = 50 C T J = 25 C I, rain Current () 0 OPERTION IN THIS RE LIMITE BY RS(on) 0µs ms T = 25 C ms T J = 50 C V GS = 0V 0.0 Singe Puse 0.2 0.4 0.6 0.8.0.2.4 0 V S, Source-to-rain Votage (V) V S, rain-to-source Votage (V) Fig 7 Typica Source-rain iode Forward Votage Fig 8 Maximum Safe Operating rea
Q G V S R 4 5V Q GS Q G R G V GS U T + - V V G 4 5V Charge Puse Width µs uty Factor Fig 9a Basic Gate Charge Waveform Current Reguator Same Type as.u.t. Fig a Switching Time Test Circuit V S 2V.2µF 50KΩ.3µF 90.U.T. + V - S V GS V GS t d(on) t r t d(off) t f 3m I G I Current Samping Resistors Fig 9b Gate Charge Test Circuit Fig b Switching Time Waveforms 00 Therma Response (Z thj ) 0 = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T 0.0000 0.000 0.00 0.0 0 t, Rectanguar Puse uration (sec) PM t t2 Fig Maximum Effective Transient Therma Impedance, Junction-to-mbient
river Gate rive Period P.W. = P.W. Period V GS =V.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5 I S Fig 2 For N-Channe HEXFETS
Package Outine Micro3 (SOT-23 / TO-236B) imensions are shown in miimeters (inches) 3 E - - - C - B 3X - B - 3 2 e e 0. (.004) M C S B S 3 LE SSIGNMENTS - GTE 2 - SOURCE 3 - RIN H 0.20 (.008 ) M M 0.008 (.003) θ L 3X C 3X INCHES MILLIMETERS IM MIN MX MIN MX.032.044 0.82..00.004 0.02 0. B.05.02 0.38 0.54 C.004.006 0. 5.5.20 2.67 3.05 e.0750 BSIC.90 BSIC e.0375 BSIC 0.95 BSIC E.047.055.20.40 H.083.098 2. 2.50 L.005.0 3 0.25 θ 0 8 0 8 MINIMUM RECOMMENE FOOTPRINT 0.80 (.03 ) 3X 0.90 (.035 ) 3X 2.00 (.079 ) NOTES:. IMENSIONING TOLERNCING PER NSI Y4.5M-982. 2. CONTROLLING IMENSION : INCH. 3 IMENSIONS O NOT INCLUE MOL FLSH. 0.95 (.037 ) 2X Part Marking Information Micro3 (SOT-23 / TO-236B) I r )Uuv ƒh h xv tv s h v hƒƒyvr qr vpr ƒ qˆprqirs r!!! (;03/(7+,6,6,5/0/ 35780(5 35780(52(5()(5((,5/0/,5/0/,5/0/,5/0/ (,5/0/ ),5/0/ *,5/0/ +,5/0/ 7(2((;03/(6 :: :: () 7( 2( ::,)35(((/67,*,72)/(5(5 (5 (5 ( ) * + -. :25. :((. ::,)35(((/(77(5 :25. :((. : ; = : ; = RWHV7KLVSUWPUNLQJLQIRUPWLRQSSOLHVWRGHYLFHVSURGXFHGIWHU :,)35(((/67,*,72)/(5(5 35780(5 35780(52(5()(5((,5/0/,5/0/,5/0/,5/0/ (,5/0/ ),5/0/ *,5/0/ +,5/0/ (5 : :((. /27 2( (5 (5 ( ) * + -. :25. :((. ; = :,)35(((/(77(5 :25. :((. : : ; =
Tape Ree Information Micro3 (SOT-23 / TO-236B) imensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEE IRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) 78.00 ( 7.008 ) MX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 EI-54. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for saes contact information. 0/03