P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (<.mm) vaiabe in Tape and Ree Fast Switching G S 2 3 V SS = 20V R S(on) = 0.25Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. customized eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards. Micro3 bsoute Maximum Ratings Parameter Max. Units I @ T = 25 C Continuous rain Current, V GS @ 4.5V.2 I @ T = 70 C Continuous rain Current, V GS @ 4.5V 0.95 I M Pused rain Current 7.4 P @T = 25 C Power issipation 540 mw Linear erating Factor 4.3 mw/ C V GS Gate-to-Source Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Therma Resistance Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 230 C/W www.irf.com 2/4/
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ ΔV (BR)SS/ΔT J Breakdown Votage Temp. Coefficient 0.024 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0.25 V GS = 4.5V, I = 0.93 ƒ Ω 0.35 V GS = 2.7V, I = 0.47 ƒ V GS(th) Gate Threshod Votage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance.3 S V S = V, I = 0.47 I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V n Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge 2.6 3.9 I = 0.93 Q gs Gate-to-Source Charge 0.4 0.62 nc V S = 6V Q gd Gate-to-rain ("Mier") Charge..7 V GS = 4.5V, See Fig. 6 and 9 ƒ t d(on) Turn-On eay Time 2.5 V = V t r Rise Time 9.5 I = 0.93 t d(off) Turn-Off eay Time 9.7 ns R G = 6.2Ω t f Fa Time 4.8 R = Ω, See Fig. ƒ C iss Input Capacitance V GS = 0V C oss Output Capacitance 5 pf V S = 5V C rss Reverse Transfer Capacitance 25 ƒ =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 0.54 (Body iode) showing the I SM Pused Source Current integra reverse 7.4 (Body iode) p-n junction diode. V S iode Forward Votage.2 V T J = 25 C, I S = 0.93, V GS = 0V ƒ t rr Reverse Recovery Time 25 38 ns T J = 25 C, I F = 0.93 Q rr Reverse RecoveryCharge 6 24 nc di/dt = 0/µs ƒ G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) I S 0.93, di/dt 90/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2%. Surface mounted on FR-4 board, t 5sec. www.irf.com 2
I, rain-to-source Current () 0 0. VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20μs PULSE WITH 0.0 T J = 25 C 0. V S, rain-to-source Votage (V) I, rain-to-source Current () 0 0. VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20μs PULSE WITH 0.0 T J = 50 C 0. V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 0. T J = 25 C T = 50 C J V S = V 20μs PULSE WITH 0.0.5 2.0 2.5 3.0 3.5 4.0 V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0.5.0 0.5 I = 0.93 V GS = 4.5V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 200 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd 60 C oss = C ds Cgd C iss 20 Coss 80 C rss 40 0 0 V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) 8 6 4 2 I = 0.93 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE 9 0.0.0 2.0 3.0 4.0 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0. T J = 50 C T J = 25 C I, rain Current () 0 OPERTION IN THIS RE LIMITE BY RS(on) 0μs ms T = 25 C ms T J = 50 C V GS = 0V 0.0 Singe Puse 0. 0.2 0.4 0.6 0.8.0.2.4 0 V S, Source-to-rain Votage (V) V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea www.irf.com 4
Q G V S R 4.5V Q GS Q G R G V GS.U.T. - V V G 4.5V Charge Puse Width µs uty Factor 0. % Fig 9a. Basic Gate Charge Waveform Current Reguator Same Type as.u.t. Fig a. Switching Time Test Circuit V S 2V.2μF 50KΩ.3μF 90%.U.T. V - S V GS % V GS t d(on) t r t d(off) t f 3m I G I Current Samping Resistors Fig 9b. Gate Charge Test Circuit Fig b. Switching Time Waveforms 00 Therma Response (Z thj ) 0 = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T 0. 0.0000 0.000 0.00 0.0 0. 0 t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient www.irf.com 5
Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 2. For N-Channe HEXFETS www.irf.com 6
Micro3 (SOT-23) (Lead-Free) Package Outine imensions are shown in miimeters (inches) 5 2 6 B E e 3 6 2 3X e b 0.20 [0.008] 0. [0.004] C M C C B 5 E 0.5 [0.006] M C B H 4 L 3X L 7 L2 c IMENSIONS SYMBOL MILLIMETERS INCHES MIN MX MIN MX 0.89.2 0.0 0. 0.0004 2 0.88.02 b 0.30 0.50 c 0.08 0.20 2.80 3.04 E 2. 2.64 E.20.40 e 0.95 BSC %6& e.90 BSC %6& L 0.40 0.60 L 0.54 REF REF L2 0.25 BSC BSC 0 8 0 8 Recommended Footprint NOTES: 0.802 0.972.900 0.950 2.742. IMENSIONING & TOLERNCING PER NSI Y4.5M-994 2. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING IMENSION: MILLIMETER. 4. TUM PLNE H IS LOCTE T THE MOL PRTING LINE. 5. TUM N B TO BE ETERMINE T TUM PLNE H. 6. IMENSIONS N E RE MESURE T TUM PLNE H. IMENSIONS OES NOT INCLUE MOL PROTRUSIONS OR INTERLE FLSH. MOL PROTRUSIONS OR INTERLE FLSH SHLL NOT EXCEE 0.25 MM [0.0 INCH] PER SIE. 7. IMENSION L IS THE LE LENGTH FOR SOLERING TO SUBSTRTE. 8. OUTLINE CONFORMS TO JEEC OUTLINE TO-236 B. Micro3 (SOT-23 / TO-236B) Part Marking Information Micro3 / SOT-23 Package Marking PRT NUMBER HLOGEN FREE INICTOR YW LC Y = YER W = WEEK LOT COE PRT NUMBER COE REFERENCE: = IRLML2402 B =IRLML2803 C = IRLML2402 = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 Note: ine above the work week (as shown here) indicates Lead-free W = (-26) IF PRECEE BY LST IGIT OF CLENR YER YER Y 200 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 20 0 WOR K WE EK W 0 02 B 03 C 04 24 25 26 X Y Z W = (27-52) IF PRECEE BY LETTER WOR K YER Y WE EK W 200 27 2002 B 28 B 2003 C 29 C 2004 30 2005 E 2006 F 2007 G 2008 H 2009 J 20 K 50 X 5 Y 52 Z Note: For the most current drawing pease refer to IR website at http://www.irf.com/package www.irf.com 7
Micro3 Tape & Ree Information imensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEE IRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) 78.00 ( 7.008 ) MX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. Note: For the most current drawing pease refer to IR website at http://www.irf.com/package ata and specifications subject to change without notice. IR WORL HEQURTERS: N.Sepuveda Bvd, E Segundo, Caifornia 90245, US Te: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for saes contact information. 2/20 www.irf.com 8