C4D22 Silicon Carbide Schottky Diode Z-Rec Rectifier Features.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Package TO-22-2 PIN PIN 2 RM = 2 V ( =35 C) = 5 Q c = nc CSE pplications Switch Mode Power Supplies (SMPS) Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages C/DC converters Part Number Package Marking C4D22 TO-22-2 C4D22 Maximum Ratings ( =25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 2 V SM Surge Peak Reverse Voltage 3 V DC Peak Reverse Voltage 2 V Continuous Forward Current 5 2 =25 C =35 C =65 C Fig. 3 RM Repetitive Peak Forward Surge Current 3 8.4 = ms, Half Sine Pulse = C, t P = ms, Half Sine Pulse SM Non-Repetitive Forward Surge Current 9 6.5 = ms, Half Sine Pulse = C, t P = ms, Half Sine Pulse Fig. 8,Max Non-Repetitive Peak Forward Current 2 6 = ms, Pulse = C, t P = ms, Pulse Fig. 8 P tot Power Dissipation 6 26 W =25 C = C Fig. 4 dv/dt Diode dv/dt ruggedness 2 V/ns =-65V i 2 dt i 2 t value.8.4 2 s = ms = C, t P = ms Operating Junction Range -55 to +75 C T stg Storage Temperature Range -55 to +35 C TO-22 Mounting Torque 8.8 Nm lbf-in M3 Screw 6-32 Screw C4D22 Rev. E, 9-26
Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current.4.9 4.8 3 5 5 Q C Total Capacitive Charge nc C Total Capacitance 67 8 V μ pf = 2 =25 C = 2 =75 C = 2 V =25 C = 2 V =75 C = 8 V, = 2 di/dt = 2 /μs = V,, f = MHz = 4 V, = 25 C, f = MHz = 8 V, = 25 C, f = MHz Fig. Fig. 2 Fig. 5 Fig. 6 E C Capacitance Stored Energy 3.2 μj = 8 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case 2.5 C/W Fig. 9 Typical Performance 4 Forward () Current () 3.5 3 2.5 2.5.5 =-55 C = 75 C =25 C =75 C I R Reverse I R (m) Current (m).9.8.7.6.5.4.3.2. =-55 C = 75 C =25 C =75 C.5.5 2 2.5 3 3.5 5 5 V F Forward V F (V) Voltage Reverse (V) Voltage (V) Figure. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D22 Rev. E, 9-26
Typical Performance 35 7. 3 6. (peak) () 25 2 5 % Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P Tot (W) 5. 4. 3. 2. 5.. 25 5 75 25 5 75 ( C) 25 5 75 25 5 75 25 5 75 25 5 75 ( C) Figure 3. Current Derating Figure 4. Power Derating Q c (nc) 4 2 Q C Capacitive Charge (nc) 8 6 4 2 2 4 6 8 Reverse Voltage (V) (V) C (pf) 8 6 4 2 8 6 4 2.. (V) Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D22 Rev. E, 9-26
Typical Performance 6. 6 5. 5 E C (mj) E C Capacitive Energy (uj) 4. 4 3. 3 2. 2 SM IFSM() _initial _initial = C.. 2 4 6 8 Reverse V Voltage (V) R (V) E-5.E-5 E-4.E-4 E-3.E-3 E-2.E-2 tp(s) t p (s) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal Resistance ( C/W) E-3 E-3.5.3..5.2. SinglePulse E-3 E-6 E-6 E-6 E-3 E-3 E-3 T (Sec) Figure 9. Transient Thermal Impedance 4 C4D22 Rev. E, 9-26
Package Dimensions Package TO-22-2 PIN PIN 2 CSE POS Inches Millimeters Min Max Min Max.38.4 9.677.44 B.235.255 5.969 6.477 C..2 2.54 3.48 D.223.337 5.664 8.56 D.457-.49.6-2.45 typ D2.277-.33 typ 7.4-7.7 typ D3.244-.252 typ 6.22-6.4 typ E.59.65 4.986 5.62 E.32.326 7.68 8.28 E2.227 25 5.77 6.37 F.43.53 3.632 3.886 G.5.47 28.67 29.34 H.5.55 2.7 3.97 L.25.36.635.94 M.45.55.43.55 N.95.25 4.953 5.27 P.65.85 4.9 4.699 Q.48.54.29.372 S 3 6 3 6 T 3 6 3 6 U 3 6 3 6 V.94. 2.388 2.794 W.4.25.356.635 X 3 5.5 3 5.5 Y.385.4 9.779.44 z.3.5 3.32 3.8 NOTE:. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-22-2 Part Number Package Marking C4D22 TO-22-2 C4D22 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D22 Rev. E, 9-26
Diode Model V ft = V T +If*R T V T =.9592+( * -.2* -3 ) R T =.673+( * 2.* -3 ) Note: = Diode Junction Temperature In Degrees Celsius V T R T Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2/65/EC (RoHS2), as implemented January 2, 23. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/562/25-7-3/349i Copyright 26 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US Tel: +.99.33.53 Fax: +.99.33.545 www.cree.com/power 6 C4D22 Rev. E, 9-26